Search Results - "Bird, Jonathan P"

Correlated insulator collapse due to quantum avalanche via in-gap ladder states by Han, Jong E., Aron, Camille, Chen, Xi, Mansaray, Ishiaka, Han, Jae-Ho, Kim, Ki-Seok, Randle, Michael, Bird, Jonathan P.

“…The significant discrepancy observed between the predicted and experimental switching fields in correlated insulators under a DC electric field…”
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Signature of Spin-Resolved Quantum Point Contact in p‑Type Trilayer WSe2 van der Waals Heterostructure by Sakanashi, Kohei, Krüger, Peter, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho, Ferry, David K, Bird, Jonathan P, Aoki, Nobuyuki

“…In this study, an electrostatically induced quantum confinement structure, so-called quantum point contact, has been realized in a p-type trilayer tungsten…”
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Valley polarized conductance quantization in bilayer graphene narrow quantum point contact by Sakanashi, Kohei, Wada, Naoto, Murase, Kentaro, Oto, Kenichi, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Bird, Jonathan P., Ferry, David K., Aoki, Nobuyuki

“…In this study, we fabricated quantum point contacts narrower than 100 nm by using an electrostatic potential to open the finite bandgap by applying a…”
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Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene by Nathawat, Jubin, Mansaray, Ishiaka, Sakanashi, Kohei, Wada, Naoto, Randle, Michael D., Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Barut, Bilal, Zhao, Miao, Ramamoorthy, Harihara, Somphonsane, Ratchanok, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Aoki, Nobuyuki, Han, Jong E., Bird, Jonathan P.

“…Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps…”
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Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors by Matsunaga, Masahiro, Higuchi, Ayaka, He, Guanchen, Yamada, Tetsushi, Krüger, Peter, Ochiai, Yuichi, Gong, Yongji, Vajtai, Robert, Ajayan, Pulickel M, Bird, Jonathan P, Aoki, Nobuyuki

“…Utilizing an innovative combination of scanning-probe and spectroscopic techniques, supported by first-principles calculations, we demonstrate how…”
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Moving towards the magnetoelectric graphene transistor by Cao, Shi, Xiao, Zhiyong, Kwan, Chun-Pui, Zhang, Kai, Bird, Jonathan P., Wang, Lu, Mei, Wai-Ning, Hong, Xia, Dowben, P. A.

“…The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force…”
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Towards a Strong Spin-Orbit Coupling Magnetoelectric Transistor by Dowben, Peter A., Nikonov, Dmitri, Binek, Christian, Zhang, Kai, Wang, Lu, Mei, Wai-Ning, Bird, Jonathan P., Singisetti, Uttam, Hong, Xia, Wang, Kang L.

“…Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the interface magnetism of an ME antiferromagnet gate dielectric formed…”
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Transient Response of h‑BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping by Nathawat, Jubin, Zhao, Miao, Kwan, Chun-Pui, Yin, Shenchu, Ramamoorthy, Harihara, He, Guanchen, Somphonsane, Ratchanok, Matsumoto, Naoki, Sakanashi, Kohei, Kida, Michio, Aoki, Nobuyuki, Jin, Zhi, Kim, Yunseob, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Bird, Jonathan P

“…We use transient electrical measurements to investigate the details of self-heating and charge trapping in graphene transistors encapsulated in hexagonal boron…”
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The TeraNova platform: An integrated testbed for ultra-broadband wireless communications at true Terahertz frequencies by Sen, Priyangshu, Pados, Dimitris A., Batalama, Stella N., Einarsson, Erik, Bird, Jonathan P., Jornet, Josep M.

“…Terahertz (THz)-band (0.1 THz to 10 THz) communication is envisioned as a key technology to meet the demand for faster, more ubiquitous wireless communication…”
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Evidence for a thermally driven charge-density-wave transition in 1T-TaS2 thin-film devices: Prospects for GHz switching speed by Mohammadzadeh, Amirmahdi, Baraghani, Saba, Yin, Shenchu, Kargar, Fariborz, Bird, Jonathan P., Balandin, Alexander A.

“…We report on the room-temperature switching of 1T-TaS2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their…”
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Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene by Chuang, Chiashain, Lin, Li-Hung, Aoki, Nobuyuki, Ouchi, Takahiro, Mahjoub, Akram M, Woo, Tak-Pong, Bird, Jonathan P, Ochiai, Yuichi, Lo, Shun-Tsung, Liang, Chi-Te

“…We have performed magnetotransport measurements on a multi-layer graphene flake. At the crossing magnetic field B c , an approximately temperature-independent…”
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Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors by Randle, Michael, Lipatov, Alexey, Kumar, Avinash, Kwan, Chun-Pui, Nathawat, Jubin, Barut, Bilal, Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Komesu, Takeshi, Avila, José, Asensio, Maria C, Dowben, Peter A, Sinitskii, Alexander, Singisetti, Uttam, Bird, Jonathan P

“…We explore the electrical characteristics of TiS nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials…”
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Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors by Randle, Michael, Lipatov, Alexey, Kumar, Avinash, Kwan, Chun-Pui, Nathawat, Jubin, Barut, Bilal, Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Komesu, Takeshi, Avila, José, Asensio, Maria C, Dowben, Peter A, Sinitskii, Alexander, Singisetti, Uttam, Bird, Jonathan P

“…We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials…”
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Probing the Dynamics of Electric Double Layer Formation over Wide Time Scales (10–9–10+5 s) in the Ionic Liquid DEME-TFSI by Yin, Shenchu, He, Keke, Randle, Michael D, Barut, Bilal, Dixit, Ripudaman, Lipatov, Alexey, Sinitskii, Alexander, Bird, Jonathan P

“…We investigate the transient response of N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis­(trifluoromethylsulfonyl)-imide-based ionic liquid (IL) planar…”
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Evaluating the performance of quantum point contacts as nanoscale terahertz sensors by Song, Jungwoo, Aizin, Gregory, Kawano, Yukio, Ishibashi, Koji, Aoki, Nobuyuki, Ochiai, Yuichi, Reno, John L, Bird, Jonathan P

“…Quantum point contacts (QPCs) are nanoscale constrictions that are realized in a high-mobility two-dimensional electron gas by applying negative bias to split…”
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Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics by He, Keke, Barut, Bilal, Yin, Shenchu, Randle, Michael D., Dixit, Ripudaman, Arabchigavkani, Nargess, Nathawat, Jubin, Mahmood, Ather, Echtenkamp, Will, Binek, Christian, Dowben, Peter A., Bird, Jonathan P.

“…Evidence of robust spin‐dependent transport in monolayer graphene, deposited on the (0001) surface of the antiferromagnetic (AFM)/magneto‐electric oxide…”
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Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts by Le Thi, Hai Yen, Ngo, Tien Dat, Phan, Nhat Anh Nguyen, Yoo, Won Jong, Watanabe, Kenji, Taniguchi, Takashi, Aoki, Nobuyuki, Bird, Jonathan P., Kim, Gil‐Ho

“…Owing to their practical applications, two‐dimensional semiconductor p–n diodes have attracted enormous attention. Over the past decade, various methods, such…”
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GR-FET application for high-frequency detection device by Mahjoub, Akram M, Nicol, Alec, Abe, Takuto, Ouchi, Takahiro, Iso, Yuhei, Kida, Michio, Aoki, Noboyuki, Miyamoto, Katsuhiko, Omatsu, Takashige, Bird, Jonathan P, Ferry, David K, Ishibashi, Koji, Ochiai, Yuichi

“…A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that…”
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Analysis of Operation Mechanism of Field Effect Transistor Composed of Network of High-Quality Single Wall Carbon Nanotubes by Scanning Gate Microscopy by Wei, Xiaojun, Aoki, Nobuyuki, Yahagi, Tatsurou, Maeda, Kenji, Bird, Jonathan P, Ishibashi, Koji, Ochiai, Yuichi

“…Field effect transistors (FETs) whose channel is composed of a network of high-quality single wall carbon nanotubes (SWNTs) have been studied to investigate…”
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Asymmetrically Engineered Nanoscale Transistors for On-Demand Sourcing of Terahertz Plasmons by Barut, Bilal, Cantos-Roman, Xavier, Crabb, Justin, Kwan, Chun-Pui, Dixit, Ripudaman, Arabchigavkani, Nargess, Yin, Shenchu, Nathawat, Jubin, He, Keke, Randle, Michael D, Vandrevala, Farah, Sugaya, Takeyoshi, Einarsson, Erik, Jornet, Josep M, Bird, Jonathan P, Aizin, Gregory R

“…Terahertz (THz) plasma oscillations represent a potential path to implement ultrafast electronic devices and circuits. Here, we present an approach to generate…”
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