Search Results - "Binhui, Hu"

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    pH-Triggered Charge-Reversal Silk Sericin-Based Nanoparticles for Enhanced Cellular Uptake and Doxorubicin Delivery by Hu, Doudou, Xu, Zongpu, Hu, Zeyun, Hu, Binhui, Yang, Mingying, Zhu, Liangjun

    Published in ACS sustainable chemistry & engineering (06-02-2017)
    “…Silk-based nanoparticles have been exhibiting an increasing potential for use as drug delivery systems due to their great versatility. To extend applications…”
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    Journal Article
  3. 3

    Preparation of a novel silk microfiber covered by AgCl nanoparticles with antimicrobial activity by Xie, Qifan, Xu, Zongpu, Hu, Binhui, He, Xiuling, Zhu, Liangjun

    Published in Microscopy research and technique (01-03-2017)
    “…We prepared silk fibroin microfibers in which silver chloride (AgCl) nanoparticles were dispersed, by sequential dipping of microfibers obtained using alkaline…”
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    Journal Article
  4. 4

    Field Emission Properties of a Potassium-Doped Multiwalled Carbon Nanotube Tip by Hu, Binhui, Li, Peng, Cao, Jien, Dai, Hongjie, Fan, Shoushan

    “…The field emission properties of a single closed multiwalled carbon nanotube tip were investigated before and after doping with potassium. The threshold…”
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    Journal Article
  5. 5

    Strongly Metallic Electron and Hole 2D Transport in an Ambipolar Si-Vacuum Field Effect Transistor by Hu, Binhui, Yazdanpanah, M M, Kane, B E, Hwang, E H, Das Sarma, S

    Published in Physical review letters (17-07-2015)
    “…We report experiment and theory on an ambipolar gate-controlled Si(111)-vacuum field effect transistor where we study electron and hole (low-temperature 2D)…”
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    Journal Article
  6. 6

    High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces by Hu, Binhui, Kott, Tomasz M., McFarland, Robert N., Kane, B. E.

    Published in Applied physics letters (18-06-2012)
    “…We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative…”
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    Journal Article
  7. 7

    Research on flexible power limiting strategy of PV power generation system based on secant method by Hu, Binhui, Wang, Jianhua

    “…The proportion of photovoltaic power generation in the power system is increasing year by year, and its instability will have a more obvious impact on the…”
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    Conference Proceeding
  8. 8

    Research on power limiting strategy of PV Power generation based on MPPT and power loop by Weijie, Qian, Zhongfeng, Zhang, Jiapeng, Li, Jianhua, Wang, Binhui, Hu

    “…With the massive connection of photovoltaic power plant to the electrified wire netting, the influence of peak residual power brought by the generation peak on…”
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    Conference Proceeding
  9. 9

    Valley-degenerate two-dimensional electrons in the lowest Landau level by Kott, Tomasz M, Hu, Binhui, Brown, S H, Kane, B E

    “…We report low temperature magnetotransport measurements on a high mobility ( mu = 325 000 cm super(2)/Vs) two-dimensional electron system on a H-terminated…”
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    Journal Article
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    Single electron transistor in pure silicon by Hu, Binhui

    Published 01-01-2009
    “…As promising candidates for spin qubits, semiconductor quantum dots (QDs) have attracted tremendous research efforts. Currently most advanced progress is from…”
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    Dissertation
  12. 12

    Single electron transistor in pure silicon by Hu, Binhui

    “…As promising candidates for spin qubits, semiconductor quantum dots (QDs) have attracted tremendous research efforts. Currently most advanced progress is from…”
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    Dissertation
  13. 13

    Effect of device design on charge offset drift in Si/SiO$_2$ single electron devices by Hu, Binhui, Ochoa, Erick D, Sanchez, Daniel, Perron, Justin K, Zimmerman, Neil M, StewartJr, M. D

    Published 11-07-2018
    “…We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall…”
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    Journal Article
  14. 14

    Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces by Hu, Binhui, Yazdanpanah, Mohamad M, Coppock, Joyce E, Kane, B. E

    Published 13-09-2015
    “…We have fabricated ambipolar transistors on chemically prepared hydrogen-terminated Si(111) surfaces, in which a two-dimensional electron system (2DES) or a…”
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    Journal Article
  15. 15

    Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor by Hu, Binhui, Yazdanpanah, M. M, Kane, B. E, Hwang, E. H, Sarma, S. Das

    Published 02-08-2015
    “…Phys. Rev. Lett. 115, 036801 (2015) We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study…”
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    Journal Article
  16. 16

    Valley Degenerate 2D Electrons in the Lowest Landau Level by Kott, Tomasz M, Hu, Binhui, Brown, S. H, Kane, B. E

    Published 28-01-2014
    “…Phys. Rev. B 89, 041107 (2014) We report low temperature magnetotransport measurements on a high mobility (\mu=325,000 cm^2/V sec) 2D electron system on a…”
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    Journal Article
  17. 17

    High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces by Hu, Binhui, Kott, Tomasz M, McFarland, Robert N, Kane, B. E

    Published 17-01-2012
    “…We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative…”
    Get full text
    Journal Article
  18. 18

    Electron spin blockade and singlet-triplet transition in a silicon single electron transistor by Hu, Binhui, Yang, C. H

    Published 23-04-2009
    “…We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the…”
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    Journal Article
  19. 19

    On demand single photon source using a nanoscale metal-insulator-semiconductor capacitor by Hu, Binhui, Yang, C. H, Yang, M. J

    Published 10-05-2005
    “…We propose an on-demand single photon source for quantum cryptography using a metal-insulator-semiconductor quantum dot capacitor structure. The main component…”
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    Journal Article