Search Results - "Binder, Andrew T."

Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices by Binder, Andrew T., Steinfeldt, Jeffrey, Allerman, Andrew A., Rummel, Brian D., Glaser, Caleb, Yates, Luke, Kaplar, Robert J.

“…This work provides the first demonstration of a multipoint fit from theory to experiment for step-etched junction terminations on vertical gallium nitride…”
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High current density 1.2 kV class HfO2-gated vertical GaN trench MOSFETs by Binder, Andrew T., Steinfeldt, Jeffrey, Reilly, Kevin J., Floyd, Richard S., Dickens, Peter T., Klesko, Joseph P., Allerman, Andrew A., Kaplar, Robert J.

“…This work reports on high current density 1.2 kV class HfO _2 -gated vertical GaN trench metal-oxide-semiconductor field-effect transistors (MOSFETs). An…”
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Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources by Mazumder, Sudip K., Voss, Lars F., Dowling, Karen M., Conway, Adam, Hall, David, Kaplar, Robert J., Pickrell, Gregory W., Flicker, Jack, Binder, Andrew T., Chowdhury, Srabanti, Veliadis, Victor, Luo, Fang, Khalil, Sameh, Aichinger, Thomas, Bahl, Sandeep R., Meneghini, Matteo, Charles, Alain B.

“…This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of…”
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Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield by Binder, Andrew T., Cooper, James A., Steinfeldt, Jeffrey, Allerman, Andrew A., Floyd, Richard, Yates, Luke, Kaplar, Robert J.

“…•Lines 7-8: Furthermore, state-of-the-art vertical GaN devices including fin-JFETs, CAVETs, and MOSFETs have been reported with blocking voltages up to 1.6 kV…”
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Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices by Glaser, Caleb E., Binder, Andrew T., Yates, Luke, Allerman, Andrew A., Feezell, Daniel F., Kaplar, Robert J.

“…This study analyzes the ability of various processing techniques to reduce leakage current in vertical GaN MOS devices. Careful analysis is required to…”
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Simulation and Design of Step-Etched Junction Termination Extensions for GaN Power Diodes by Dickerson, Jeramy R., Binder, Andrew T., Pickrell, Greg, Gunning, Brendan P., Kaplar, Robert J.

“…Proper edge termination is required to reach large blocking voltages in vertical power devices. Limitations in selective area p-type doping in GaN restrict the…”
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Bevel Edge Termination for Vertical GaN Power Diodes by Binder, Andrew T., Dickerson, Jeramy R., Crawford, Mary H., Pickrell, Greg W., Allerman, Andrew A., Sharps, Paul, Kaplar, Robert J.

“…Edge termination for vertical power devices presents a significant challenge, as improper termination can result in devices with a breakdown voltage…”
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High current density 1.2 kV class HfO 2 -gated vertical GaN trench MOSFETs by Binder, Andrew T., Steinfeldt, Jeffrey, Reilly, Kevin J., Floyd, Richard S., Dickens, Peter T., Klesko, Joseph P., Allerman, Andrew A., Kaplar, Robert J.

“…This work reports on high current density 1.2 kV class HfO 2 -gated vertical GaN trench metal-oxide-semiconductor field-effect transistors (MOSFETs). An output…”
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Trap induced negative differential conductance and back-gated charge redistribution in AlGaN/GaN power devices by Binder, Andrew T., Yuan, Jiann-Shiun, Krishnan, Balakrishnan, Shea, Patrick M., Yeh, Wen-Kuan

“…Negative differential conductance (NDC) seen in the drain current saturation region is typically attributed to self-heating effects in GaN HEMTs. In this…”
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Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes by Binder, Andrew T., Pickrell, Greg W., Allerman, Andrew A., Dickerson, Jeramy R., Yates, Luke, Steinfeldt, Jeffrey, Glaser, Caleb, Crawford, Mary H., Armstrong, Andrew, Sharps, Paul, Kaplar, Robert J.

“…This work provides the first demonstration of vertical GaN Junction Barrier Schottky (JBS) rectifiers fabricated by etch and regrowth of p-GaN. A reverse…”
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