Search Results - "Bin Dolmanan, Surani"
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MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection
Published in IEEE sensors journal (15-04-2019)“…This paper demonstrates a novel AlGaN/GaN high-electron mobility transistor (HEMT)-based cadmium ion (Cd 2+ ) sensor with mercaptopropionic acid (MPA) and…”
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2
Sensitive and Selective Detection of Pb2+ Ions Using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor
Published in IEEE electron device letters (01-12-2019)“…We report sensitive and selective AlGaN/GaN High Electron Mobility Transistor (HEMT)-based sensor for Lead ion (Pb 2+ ) detection. The gate region of the HEMT…”
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3
MoS2 functionalized AlGaN/GaN transistor based room temperature NO2 gas sensor
Published in Sensors and actuators. A. Physical. (01-08-2022)“…The ability to monitor toxic gases under room-temperature conditions, with enhanced response and selectivity present in the atmosphere, is still considered as…”
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Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
Published in AIP advances (01-08-2017)“…In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate,…”
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5
Design and Synthesis of Polymer-Functionalized NIR Fluorescent Dyes–Magnetic Nanoparticles for Bioimaging
Published in ACS nano (27-08-2013)“…The fluorescent probes having complete spectral separation between absorption and emission spectra (large Stokes shift) are highly useful for solar…”
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6
Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors
Published in Physica status solidi. A, Applications and materials science (01-03-2020)“…Herein, a unique device‐design strategy is reported for increasing the breakdown voltage and hence Baliga figure of merit (BFOM) of III‐nitride high electron…”
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7
Linear and Circular AlGaN/AlN/GaN MOS-HEMT-based pH Sensor on Si Substrate: A Comparative Analysis
Published in IEEE sensors letters (01-04-2019)“…In this article, sensitivity enhancement of undoped AlGaN/AlN/GaN HEMT for pH detection by using dielectric (10 nm Al 2 O 3 )-based MOS-gated structure is…”
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8
Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates
Published in IEEE transactions on electron devices (01-09-2018)“…We report on the band offset and interfacial electronic properties of e-beam evaporated HfO 2 gate dielectrics on III-nitride device stacks on Si. A conduction…”
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9
Degradation mechanism of ZnO-based dye-sensitized solar cells
Published in Solar energy materials and solar cells (01-02-2010)“…Zinc oxide (ZnO)-based dye-sensitized solar cell was fabricated and tested under constant solar simulator illumination until the photocurrent decreased…”
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10
Investigation of the Device Degradation Mechanism in Pentacene-Based Thin-Film Transistors Using Low-Frequency-Noise Spectroscopy
Published in IEEE transactions on electron devices (01-02-2010)“…The degradation process in pentacene-based organic thin-film transistors (OTFTs) is investigated. Pentacene-based OTFTs were fabricated with and without…”
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Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring
Published in Sensors and actuators. B, Chemical (15-04-2020)“…•A MoS2 functionalized Au gated AlGaN/ GaN HEMT sensor has been developed for the detection of toxic Hg2+ ions.•The synthesis of MoS2 was performed by…”
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12
Acidic Media Impedes Tandem Catalysis Reaction Pathways in Electrochemical CO2 Reduction
Published in Angewandte Chemie International Edition (04-09-2023)“…Electrochemical CO2 reduction (CO2R) in acidic media with Cu‐based catalysts tends to suffer from lowered selectivity towards multicarbon products. This could…”
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13
Temperature dependent lattice expansions of epitaxial GaN-on-Si heterostructures characterized by in- and ex-situ X-ray diffraction
Published in Journal of alloys and compounds (05-07-2021)“…•In- and ex-situ XRD have been employed to study GaN-on-Si heterostructures.•SG-AlGaN and MLT-AlN buffers in tandem with substrate thickness of Si are…”
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14
Fabrication and Modeling-Based Performance Analysis of Circular GaN MOSHEMT-Based Electrochemical Sensors
Published in IEEE sensors journal (15-02-2021)“…C-MOSHEMT (Circular-Metal Oxide Semiconductor High Electron Mobility Transistor) has been modeled, fabricated and sensitivity analysis has been done for pH…”
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15
Efficiency Optimization on Dye-Sensitized Solar Cells With Low-Frequency Noise Analysis
Published in IEEE transactions on electron devices (01-09-2010)“…The effects of time durations for ZnO nanorod growth and dye loading on a ZnO-based dye-sensitized solar cell's efficiency and 1/ f low-frequency noise (LFN)…”
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16
Improved Photoelectrochemical Cell With Carbon Nanotubes
Published in IEEE electron device letters (01-07-2010)“…Single-walled carbon nanotubes (SWCNTs) were incorporated into a dye-sensitized titanium dioxide (TiO 2 )-based photoelectrode and characterized in a…”
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17
Impact of self-assembled monolayer on low frequency noise of organic thin film transistors
Published in Applied physics letters (13-10-2008)“…Bottom-contact organic field-effect transistors (FETs) based on regioregular poly(3-hexylthiophene) were fabricated with different surface treatments and were…”
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18
Comparison of the AlxGa1-xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates
Published in IEEE transactions on electron devices (01-01-2016)“…Compared with bulk-Si wafer, Al x Ga 1-x N/gallium nitride (GaN) heterostructures grown on a 150-mm silicon-on-insulator (SOI) substrate with a 35-nm-thick Si…”
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19
Acidic Media Impedes Tandem Catalysis Reaction Pathways in Electrochemical CO2 Reduction
Published in Angewandte Chemie (04-09-2023)“…Electrochemical CO2 reduction (CO2R) in acidic media with Cu‐based catalysts tends to suffer from lowered selectivity towards multicarbon products. This could…”
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20
Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal
Published in Japanese Journal of Applied Physics (01-04-2015)“…We have demonstrated 0.17-µm gate-length In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) on Si(111) substrates using a non-gold metal stack…”
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