Search Results - "Bigliardi, S."

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  1. 1

    Evaluation of serum (1 → 3)-β-d-glucan clinical performance: kinetic assessment, comparison with galactomannan and evaluation of confounding factors by Pini, P., Bettua, C., Orsi, C. F., Venturelli, C., Forghieri, F., Bigliardi, S., Faglioni, L., Luppi, F., Serio, L., Codeluppi, M., Luppi, M., Mussini, C., Girardis, M., Blasi, Elisabetta

    Published in Infection (01-04-2016)
    “…Purpose We investigated the clinical performance of (1 → 3)-β- d -glucan (BG), as an early marker of invasive fungal infections (IFI), in different clinical…”
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    Journal Article
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    On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices by Lacaita, A.L., Zappa, F., Bigliardi, S., Manfredi, M.

    Published in IEEE transactions on electron devices (01-03-1993)
    “…Spectrally resolved absolute measurements of hot-carrier-induced photon emission in silicon are reported. In order to avoid uncertainties in geometrical and…”
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    Journal Article
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    Impact ionization and light emission in AlGaAs/GaAs HEMT's by Zanoni, E., Manfredi, M., Bigliardi, S., Paccagnella, A., Pisoni, P., Tedesco, C., Canali, C.

    Published in IEEE transactions on electron devices (01-08-1992)
    “…Impact ionization and light emission phenomena have been studied in AlGaAs/GaAs HEMTs biased at high drain voltages by measuring the gate excess current due to…”
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    Journal Article
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    Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs by Tedesco, C., Zanoni, E., Canali, C., Bigliardi, S., Manfredi, M., Streit, D.C., Anderson, W.T.

    Published in IEEE transactions on electron devices (01-07-1993)
    “…Impact ionization and light emission have been studied in pseudomorphic AlGaAs/InGaAs HEMTs characterized by delta doping in the undoped AlGaAs layer and by…”
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    Journal Article
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    Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriers by Zanoni, E., Bigliardi, S., Capelletti, R., Lugli, P., Magistrali, F., Manfredi, M., Paccagnella, A., Testa, N., Canali, C.

    Published in IEEE electron device letters (01-11-1990)
    “…Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high drain bias values (>4.0 V). The spectral distribution of the…”
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    Journal Article
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    Hot-electron electroluminescence in AlGaAs/GaAs heterojunction bipolar transistors by ZANONI, E, VENDRAME, L, PAVAN, P, MANFREDI, M, BIGLIARDI, S, MALIK, R, CANALI, C

    Published in Applied physics letters (25-01-1993)
    “…When biased in the active region at high collector voltages, AlGaAs/GaAs single heterojunction bipolar transistors have been observed to emit light in the…”
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    Journal Article
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    Measurements of Avalanche Effects and Light Emission in Advanced Si and SiGe Bipolar Transistors by Zanoni, Enrico, Bigliardi, Stefano, Pavan, Paolo, Pisoni, Pietro, Canali, Claudio

    “…In this paper we present the first measurements of the light emitted by advanced npn bipolar transistors in the 1.1 - 2.7 eV energy range. Light emitted by…”
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    Conference Proceeding
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    High Energy Photon Emission in GaAs MESFETs and AIGaAs/GaAs HEMTs by Zanoni, E., Tedesco, C., Paccagnella, A., Canali, C., Bigliardi, S., Manfredi, M.

    “…We present a detailed investigation of hot carrier induced impact ionization and light emission in submicron GaAs MESFETs and AlGaAs/GaAs HEMTs demonstrating…”
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    Conference Proceeding
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    Atopic Patients Who Fulfilled Rome III Criteria for Irritable Bowel Syndrome Had Higher Animal Danders Sensitization by Kewin T H Siah, Amelia Santosa, Cynthia K Y Cheung, Alex Y S Soh, Paul L Bigliardi

    “…Background/Aims The relationship between animal exposure and irritable bowel syndrome (IBS) is debated. Epidemiological studies have shown that atopy is more…”
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    Journal Article
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