Search Results - "Bietti, S."

Fabrication of Multiple Concentric Nanoring Structures by Somaschini, C, Bietti, S, Koguchi, N, Sanguinetti, S

“…We present the fabrication of GaAs/AlGaAs Multiple (from three to five) concentric nanoring structures by an innovative growth method based on droplet epitaxy…”
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Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates by Tuktamyshev, A., Fedorov, A., Bietti, S., Vichi, S., Zeuner, K. D., Jöns, K. D., Chrastina, D., Tsukamoto, S., Zwiller, V., Gurioli, M., Sanguinetti, S.

“…We present self-assembly of InAs/InAlAs quantum dots by the droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while…”
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Annealing induced anisotropy in GaAs/AlGaAs quantum dots grown by droplet epitaxy by Adorno, S., Bietti, S., Sanguinetti, S.

“…We present a systematic study of the effects of in situ annealing of strain-free GaAs/AlGaAs quantum dots grown by droplet epitaxy, identifying the relation…”
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Shape control via surface reconstruction kinetics of droplet epitaxy nanostructures by Somaschini, C., Bietti, S., Koguchi, N., Sanguinetti, S.

“…We present the fabrication and discuss the growth dynamics of two classes of GaAs quantum nanostructures fabricated by droplet epitaxy, namely, double rings…”
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High temperature single photon emitter monolithically integrated on silicon by Cavigli, L., Bietti, S., Accanto, N., Minari, S., Abbarchi, M., Isella, G., Frigeri, C., Vinattieri, A., Gurioli, M., Sanguinetti, S.

“…We report on triggered single photon emission from GaAs quantum dots, grown on Si substrates and obtained by means of fabrication protocols compatible with the…”
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Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge virtual substrates on Si by Frigeri, C., Bietti, S., Isella, G., Sanguinetti, S.

“…► We investigate self-assembled AlGaAs/GaAs quantum dots grown by Droplet Epitaxy. ► We use thin Ge virtual substrates on Si. ► Depletion of Ga at the top of…”
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Self-Assembly of Quantum Dot-Disk Nanostructures via Growth Kinetics Control by Somaschini, C, Bietti, S, Scaccabarozzi, A, Grilli, E, Sanguinetti, S

“…Complex GaAs/AlGaAs nanostructures, constituted by a quantum dot sitting on a quantum disk, are fabricated. This was made possible by droplet epitaxy growth…”
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Self-assembled GaAs islands on Si by droplet epitaxy by Somaschini, C., Bietti, S., Koguchi, N., Montalenti, F., Frigeri, C., Sanguinetti, S.

“…We presented an innovative fabrication technique for the self-assembly of GaAs islands on Si substrates by droplet epitaxy. The islands show highly tunable…”
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Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy by Somaschini, C, Bietti, S, Fedorov, A, Koguchi, N, Sanguinetti, S

“…We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric…”
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Outer zone morphology in GaAs ring/disk nanostructures by droplet epitaxy by Somaschini, C., Bietti, S., Fedorov, A., Koguchi, N., Sanguinetti, S.

“…We present the molecular beam epitaxy (MBE) fabrication of GaAs ring/disk nanostructures. In this system, a central quantum ring is surrounded by a flat outer…”
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Kinetics of multiexciton complex in GaAs quantum dots on Si by Accanto, N., Minari, S., Cavigli, L., Bietti, S., Isella, G., Vinattieri, A., Sanguinetti, S., Gurioli, M.

“…We study the multiexciton properties of GaAs quantum dots self aggregated on Si substrates. Sequential emission of two photons radiative cascade is observed…”
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Individual GaAs quantum emitters grown on Ge substrates by Cavigli, L., Abbarchi, M., Bietti, S., Somaschini, C., Sanguinetti, S., Koguchi, N., Vinattieri, A., Gurioli, M.

“…We report on the nucleation of low density and defect-free GaAs quantum dots (QDs) on Ge substrates. The growth of III-V nanostructures was realized via…”
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Self-assembled GaAs local artificial substrates on Si by droplet epitaxy by Bietti, S., Somaschini, C., Koguchi, N., Frigeri, C., Sanguinetti, S.

“…The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully…”
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Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy by Bietti, S., Cavigli, L., Minari, S., Adorno, S., Isella, G., Vinattieri, A., Gurioli, M., Sanguinetti, S.

“…In this work we show the possibility to increase the optical quality of quantum dots grown by droplet epitaxy on Ge-on-Si substrates in terms of single dot…”
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Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates by Minari, S., Cavigli, L., Sarti, F., Abbarchi, M., Accanto, N., Muñoz Matutano, G., Bietti, S., Sanguinetti, S., Vinattieri, A., Gurioli, M.

“…We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and…”
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Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy by Somaschini, C, Bietti, S, Fedorov, A, Koguchi, N, Sanguinetti, S

“…We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A…”
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Self-Assembled Local Artificial Substrates of GaAs on Si Substrate by Bietti, S, Somaschini, C, Koguchi, N, Frigeri, C, Sanguinetti, S

“…We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and…”
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Erratum to: Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy by Somaschini, C, Bietti, S, Fedorov, A, Koguchi, N, Sanguinetti, S

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Erratum to: Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy by Somaschini, C, Bietti, S, Fedorov, A, Koguchi, N, Sanguinetti, S

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Self-Assembled Local Artificial Substrates of GaAs on Si Substrate by Bietti, S, Somaschini, C, Koguchi, N, Frigeri, C, Sanguinetti, S

“…We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and…”
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