Search Results - "Bielejec, Edward S."

Large-scale integration of artificial atoms in hybrid photonic circuits by Wan, Noel H., Lu, Tsung-Ju, Chen, Kevin C., Walsh, Michael P., Trusheim, Matthew E., De Santis, Lorenzo, Bersin, Eric A., Harris, Isaac B., Mouradian, Sara L., Christen, Ian R., Bielejec, Edward S., Englund, Dirk

“…A central challenge in developing quantum computers and long-range quantum networks is the distribution of entanglement across many individually controllable…”
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Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures by Schröder, Tim, Trusheim, Matthew E., Walsh, Michael, Li, Luozhou, Zheng, Jiabao, Schukraft, Marco, Sipahigil, Alp, Evans, Ruffin E., Sukachev, Denis D., Nguyen, Christian T., Pacheco, Jose L., Camacho, Ryan M., Bielejec, Edward S., Lukin, Mikhail D., Englund, Dirk

“…The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons…”
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High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback by Chandrasekaran, Vigneshwaran, Titze, Michael, Flores, Anthony R., Campbell, Deanna, Henshaw, Jacob, Jones, Andrew C., Bielejec, Edward S., Htoon, Han

“…Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact…”
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Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide by Diler, Berk, Whiteley, Samuel J., Anderson, Christopher P., Wolfowicz, Gary, Wesson, Marie E., Bielejec, Edward S., Joseph Heremans, F., Awschalom, David D.

“…Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr 4+ ) in silicon-carbide (SiC) produces a…”
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Long-range cooperative resonances in rare-earth ion arrays inside photonic resonators by Pak, Dongmin, Nandi, Arindam, Titze, Michael, Bielejec, Edward S., Alaeian, Hadiseh, Hosseini, Mahdi

“…Engineering arrays of active optical centers to control the interaction Hamiltonian between light and matter has been the subject of intense research recently…”
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Comparison of Mg-based liquid metal ion sources for scalable focused-ion-implantation doping of GaN by Titze, Michael, Katzenmeyer, Aaron, Frisone, Sam, Ohlhausen, James A., Flores, Anthony, Campbell, DeAnna, Li, Bingjun, Wang, Yongqiang, Han, Jung, Bielejec, Edward S., Goldman, Rachel S.

“…We compare the suitability of various magnesium-based liquid metal alloy ion sources (LMAISs) for scalable focused-ion-beam (FIB) implantation doping of GaN…”
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Measurement and Simulation of Ultra-Low-Energy Ion–Solid Interaction Dynamics by Titze, Michael, Poplawsky, Jonathan D., Kretschmer, Silvan, Krasheninnikov, Arkady V., Doyle, Barney L., Bielejec, Edward S., Hobler, Gerhard, Belianinov, Alex

“…Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies…”
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Fabrication of single color centers in sub-50 nm nanodiamonds using ion implantation by Xu, Xiaohui, Martin, Zachariah O., Titze, Michael, Wang, Yongqiang, Sychev, Demid, Henshaw, Jacob, Lagutchev, Alexei S., Htoon, Han, Bielejec, Edward S., Bogdanov, Simeon I., Shalaev, Vladimir M., Boltasseva, Alexandra

“…Diamond color centers have been widely studied in the field of quantum optics. The negatively charged silicon vacancy (SiV ) center exhibits a narrow emission…”
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Large-scale optical characterization of solid-state quantum emitters by Sutula, Madison, Christen, Ian, Bersin, Eric, Walsh, Michael P., Chen, Kevin C., Mallek, Justin, Melville, Alexander, Titze, Michael, Bielejec, Edward S., Hamilton, Scott, Braje, Danielle, Dixon, P. Benjamin, Englund, Dirk R.

“…Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization…”
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Nanoscale solid-state nuclear quadrupole resonance spectroscopy using depth-optimized nitrogen-vacancy ensembles in diamond by Henshaw, Jacob, Kehayias, Pauli, Saleh Ziabari, Maziar, Titze, Michael, Morissette, Erin, Watanabe, Kenji, Taniguchi, Takashi, Li, J. I. A., Acosta, Victor M., Bielejec, Edward S., Lilly, Michael P., Mounce, Andrew M.

“…Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena, such as…”
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In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty by Titze, Michael, Byeon, Heejun, Flores, Anthony, Henshaw, Jacob, Harris, C. Thomas, Mounce, Andrew M, Bielejec, Edward S

“…An in situ counted ion implantation experiment improving the error on the number of ions required to form a single optically active silicon vacancy (SiV)…”
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Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated With Si Ions by Luo, Xuyi, Montes, Jossue, Koukourinkova, Sabina D., Vaandrager, Bastiaan L., Bielejec, Edward S., Vizkelethy, Gyorgy, Schrimpf, Ronald D., Fleetwood, Daniel M., Zhang, En Xia

“…The properties of defects in n-p-n Si bipolar junction transistors (BJTs) caused by 17-MeV Si ions are investigated via current-voltage, low-frequency (LF)…”
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Photocurrent From Single Collision 14-MeV Neutrons in GaN and GaAs by Jasica, Matthew J., Wampler, William R., Vizkelethy, Gyorgy, Hehr, Brian D., Bielejec, Edward S.

“…Accurate predictions of device performance in 14-MeV neutron environments rely upon understanding the recoil cascades that may be produced. Recoils from 14-MeV…”
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Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions With Perpendicular Anisotropy by Xiao, T. Patrick, Bennett, Christopher H., Mancoff, Frederick B., Manuel, Jack E., Hughart, David R., Jacobs-Gedrim, Robin B., Bielejec, Edward S., Vizkelethy, Gyorgy, Sun, Jijun, Aggarwal, Sanjeev, Arghavani, Reza, Marinella, Matthew J.

“…We evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA) to displacement damage induced by…”
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Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors Due to Single Particle Displacement Damage by Vizkelethy, Gyorgy, Bielejec, Edward S., Aguirre, B. A.

“…As device dimensions decrease, single displacement effects become more important. We measured the gain degradation in III-V heterojunction bipolar transistors…”
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Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond by Rosenthal, Eric I., Biswas, Souvik, Scuri, Giovanni, Lee, Hope, Stein, Abigail J., Kleidermacher, Hannah C., Grzesik, Jakob, Rugar, Alison E., Aghaeimeibodi, Shahriar, Riedel, Daniel, Titze, Michael, Bielejec, Edward S., Choi, Joonhee, Anderson, Christopher P., Vučković, Jelena

“…The negatively charged tin-vacancy center in diamond ( SnV − ) is an emerging platform for building the next generation of long-distance quantum networks. This…”
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Comparison of Radiation Effects in Custom and Commercially Fabricated Resistive Memory Devices by Holt, Joshua S., Alamgir, Zahiruddin, Beckmann, Karsten, Suguitan, Nadia, Russell, Sierra, Iler, Evan, Bakhru, Hassaram, Bielejec, Edward S., Jacobs-Gedrim, Robin B., Hughart, David R., Marinella, Matthew J., Yang-Scharlotta, Jean, Cady, Nathaniel C.

“…The radiation response of TaOx-based resistive memory (RRAM) devices fabricated in academic (Set A) and industrial (Set B) settings was compared. Ionization…”
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Hyperfine Spectroscopy of Isotopically Engineered Group-IV Color Centers in Diamond by Harris, Isaac B.W., Michaels, Cathryn P., Chen, Kevin C., Parker, Ryan A., Titze, Michael, Arjona Martínez, Jesús, Sutula, Madison, Christen, Ian R., Stramma, Alexander M., Roth, William, Purser, Carola M., Appel, Martin Hayhurst, Li, Chao, Trusheim, Matthew E., Palmer, Nicola L., Markham, Matthew L., Bielejec, Edward S., Atatüre, Mete, Englund, Dirk

“…A quantum register coupled to a spin-photon interface is a key component in quantum communication and information processing. Group-IV color centers in diamond…”
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Optical Properties of Rare Earth Ion Arrays Embedded into Lithium Niobate Micro-ring Resonators by Pak, Dongmin, Nandi, Arindam, Titze, Michael, Bielejec, Edward S, Hosseini, Mahdi

“…We investigate the optical properties of an array of thulium ions implanted into a lithium niobate ring resonator. We present the data showing that the ions'…”
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Evaluation of the accuracy of stopping and range of ions in matter simulations through secondary ion mass spectrometry and Rutherford backscattering spectrometry for low energy heavy ion implantation by Titze, Michael, Pacheco, Jose L., Byers, Todd, Van Deusen, Stuart B., Perry, Daniel L., Weathers, Duncan, Bielejec, Edward S.

“…The freely available “Stopping and Range of Ions in Matter” (SRIM) code is used for evaluating ion beam ranges and depth profiles. We present secondary ion…”
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