Search Results - "Biefeld, R.M."

OMVPE growth and gas-phase reactions of AlGaN for UV emitters by Han, J., Figiel, J.J., Crawford, M.H., Banas, M.A., Bartram, M.E., Biefeld, R.M., Song, Y.K., Nurmikko, A.V.

“…Gas-phase parasitic reactions among TMG, TMA, and NH 3, are investigated by monitoring the growth rate/incorporation efficiency of GaN and AlN using an in situ…”
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Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition by Biefeld, R.M., Allerman, A.A., Kurtz, S.R., Baucom, K.C.

“…We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb emitters using a high speed…”
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Introduction by Biefeld, R.M., Stringfellow, G.B.

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Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors by Kurtz, S.R., Dawson, L.R., Biefeld, R.M., Fritz, I.J., Zipperian, T.E.

“…Long-wavelength infrared photodiodes were fabricated using InAs/sub 1-x/Sb/sub x//InSb (x=0.82-0.85) strained-layer superlattices (SLSs). These structures can…”
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The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapor deposition by Cederberg, J.G., Hafich, M.J., Biefeld, R.M., Palmisiano, M.

“…InGaAsSb thermophotovoltaic cells and Al(Ga)AsSb cell isolation diodes have been successfully grown by MOCVD. Epitaxial growth of antimonide films is quite…”
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InAsSb-based mid-infrared lasers (3.8–3.9 μm) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition by Allerman, A. A., Biefeld, R. M., Kurtz, S. R.

“…Gain-guided, injection lasers using AlAsSb for optical confinement and a strained InAsSb/InAs multiquantum well active region were grown by metalorganic…”
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The impact of growth parameters on the formation of InAs quantum dots on GaAs(1 0 0) by MOCVD by Cederberg, J.G., Kaatz, F.H., Biefeld, R.M.

“…We have investigated InAs quantum dots (QD) formed on GaAs(1 0 0) using metal-organic chemical vapor deposition. Through a combination of room temperature…”
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Exploring new active regions for type 1 InAsSb strained-layer lasers by Biefeld, R.M., Phillips, J.D., Kurtz, S.R.

“…The authors report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb/InPSb optically pumped lasers grown using a high speed…”
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Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions by Kurtz, S. R., Allerman, A. A., Biefeld, R. M.

“…The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared materials, and devices are reported. SLSs were grown by metal-organic…”
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High slope efficiency, “cascaded” midinfrared lasers with type I InAsSb quantum wells by Kurtz, S. R., Allerman, A. A., Biefeld, R. M., Baucom, K. C.

“…Lasers and light-emitting diodes with multistage, type I InAsSb/InAsP quantum well active regions are reported. These ten stage, cascaded devices were grown by…”
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Magnetophotoluminescence of biaxially compressed InAsSb quantum wells by Kurtz, S. R., Biefeld, R. M.

“…Heterostructures with biaxially compressed InAsSb are being considered as active regions for midwave infrared diode lasers. Quantum wells of biaxially…”
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Growth of InSb on GaAs using InAlSb buffer layers by Biefeld, R.M, Phillips, J.D

“…We report the growth of InSb on GaAs using InAlSb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor…”
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The growth of mid-infrared lasers and AlAs xSb 1 − x by MOCVD by Biefeld, R.M., Allerman, A.A., Kurtz, S.R.

“…We have grown AlSb and AlAs x Sb 1 − x epitaxial layers by metal-organic chemical vapor deposition (MOCVD) using trimethylamine alane or ethyldimethylamine…”
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Midwave (4 μm) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions by Kurtz, S. R., Biefeld, R. M., Dawson, L. R., Baucom, K. C., Howard, A. J.

“…Heterostructures with biaxially compressed, As-rich InAsSb are being investigated as active regions for midwave infrared emitters. InAs1−xSbx/In1−xGaxAs…”
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The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition by Biefeld, R.M., Cederberg, J.G., Peake, G.M., Kurtz, S.R.

“…The growth conditions for GaInAsSb and AlGaAsSb using metal-organic chemical vapor deposition in an high speed rotating disk reactor are described…”
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The growth of mid-infrared lasers and AlAsxSb1 − x by MOCVD by Biefeld, R.M., Allerman, A.A., Kurtz, S.R.

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Recent advances in mid-infrared (3–6 μm) emitters by Biefeld, R.M, Allerman, A.A, Kurtz, S.R

“…We describe the metal-organic chemical vapor deposition (MOCVD) of InAsSb/InAs multiple quantum well (MQW) and InAsSb/InAsP strained-layer superlattice (SLS)…”
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The metal-organic chemical vapor deposition growth and properties of InAsSb mid-infrared (3-6-/spl mu/m) lasers and LEDs by Biefeld, R.M., Kurtz, S.R., Allerman, A.A.

“…We describe the metal-organic chemical vapor deposition (MOCVD) growth of AlAs/sub 1-x/Sb/sub x/ cladding layers and InAsSb-InAs multiple-quantum well (MQW)…”
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InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition by Biefeld, R.M, Phillips, J.D, Kurtz, S.R

“…We report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InPSb as well as mid-infrared optically…”
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Growth of InSb using tris(dimethylamino)antimony and trimethylindium by Baucom, K. C., Biefeld, R. M.

“…We have grown epitaxial layers of InSb on p−-InSb substrates by metalorganic chemical vapor deposition using tris(dimethylamino)antimony (TDMASb) and…”
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