Search Results - "Biedenbender, M."

Design and Analysis of Broadband Dual-Gate Balanced Low-Noise Amplifiers by Deal, W.R., Biedenbender, M., Po-hsin Liu, Uyeda, J., Siddiqui, M., Lai, R.

“…In this paper, we present three MMIC low-noise amplifiers using dual-gate GaAs HEMT devices in a balanced amplifier configuration. The designs target three…”
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Physical identification of gate metal interdiffusion in GaAs PHEMTs by Chou, Y.C., Grundbacher, R., Leung, D., Lai, R., Liu, P.H., Kan, Q., Biedenbender, M., Wojtowicz, M., Eng, D., Oki, A.

“…The Ti metal interdiffusion of Ti/Pt/Au gate metal stacks in 0.15-μm GaAs PHEMTs subjected to high-temperature accelerated lifetest has been physically…”
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The effect of gate metal interdiffusion on reliability performance in GaAs PHEMTs by Chou, Y.C., Leung, D., Grundbacher, R., Lai, R., Liu, P.H., Kan, Q., Biedenbender, M., Eng, D., Oki, A.

“…While Ti metal interdiffusion of Ti-Pt-Au gate metal stacks in GaAs pseudomorphic HEMT (PHEMTs) has been explored, the effect of Ti metal interdiffusion on the…”
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Innovative nitride passivated pseudomorphic GaAs HEMTs by Chou, Y C, Lai, R, Li, P, Hua, J, Nam, P, Grundbacher, R, Kim, H K, Ra, Y, Biedenbender, M, Ahlers, E

“…A novel low-temperature nitride passivation technique using high-density inductively coupled plasma chemical vapor deposition (HD-ICP-CVD) with SiH4/N2…”
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High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates by Chou, Y C, Leung, D L, Biedenbender, M, Eng, D C, Buttari, D, Mei, X B, Lin, C H, Tsai, R S, Lai, R, Barsky, M E, Wojtowicz, M, Oki, A K, Block, T R

“…Accelerated temperature lifetesting at T channel of 240, 255, and 270°C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm…”
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Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications by Chou, Y C, Leung, D L, Biedenbender, M, Buttari, D, Eng, D C, Tsai, R S, Lin, C H, Lee, L S, Mei, X B, Wojtowicz, M, Barsky, M E, Lai, R, Oki, A K, Block, T R

“…Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature life testing. The primary…”
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A 94-GHz 0.35-W power amplifier module by Pin-Pin Huang, Tian-Wei Huang, Wang, Huei, Lin, E.W., Yonghui Shu, Dow, G.S., Lai, R., Biedenbender, M., Elliott, J.H.

“…This paper presents a 94-GHz power amplifier (PA) module. This module contains three identical monolithic microwave integrated circuit (MMIC) PA chips and…”
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Innovative nitride passivated pseudomorphicGaAs HEMTs by Chou, Y.C., Lai, R., Li, G.P., Jun Hua, Nam, P., Grundbacher, R., Kim, H.K., Ra, Y., Biedenbender, M., Ahlers, E., Barsky, M., Oki, A., Streit, D.

“…A novel low-temperature nitride passivation technique using high-density inductively coupled plasma chemical vapor deposition (HD-ICP-CVD) with SiH 4 /N 2…”
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A 6-W Ka-band power module using MMIC power amplifiers by Ingram, D.L., Stones, D.I., Elliott, J.H., Wang, Huei, Lai, R., Biedenbender, M.

“…This paper presents the development of a 6-W 24% power-added efficiency (PAE) Ka-band power module with an associated power gain of 21.5 dB. The power module…”
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Evolution of DC and RF degradation induced by high-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMT MMICs by Chou, Y.C., Leung, D., Lai, R., Grundbacher, R., Eng, D., Scarpulla, J., Barsky, M., Liu, P.H., Biedenbender, M., Oki, A., Streit, D.

“…The evolution of DC and microwave degradation induced by three-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMTs was…”
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Production InP MMICs for low cost, high performance applications by Lai, R., Grundbacher, R., Sawdai, D., Uyeda, J., Biedenbender, M., Barsky, M., Gutierrez-Aitken, A., Cavus, A., Chin, P., Liu, P.H., Bhorania, R., Streit, D., Oki, A.

“…We report the progress of production InP MMICs for low cost, high performance applications at Northrop Grumman Space Technology (NGST). Both InP HEMT and HBT…”
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Compact W-band solid-state MMIC high power sources by Ingram, D.L., Chen, Y.C., Stones, I., Yamauchi, D., Brunner, B., Huang, P., Biedenbender, M., Ellion, J., Lai, R., Streit, D.C., Lau, K.F., Yen, H.C.

“…Presented is the development of two >2 W W-band solid-state monolithic microwave integrated circuit (MMIC) power amplifier modules using TRW's advanced GaAs-…”
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Innovative nitride passivation for pseudomorphic GaAs HEMTs and impact on device performance by Chou, Y.C., Nam, P., Li, G.P., Kim, L.K., Grundbacher, R., Ahlers, E., Ra, Y., Xu, Q., Biedenbender, M.B., Oki, A.

“…A novel low temperature nitride deposition technique using high-density inductively coupled plasma chemical vapor deposition (HD-ICP-CVD) to passivate 0.15…”
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Novel W-band monolithic push-pull power amplifiers by Wang, Huei, Lai, R., Biedenbender, M., Dow, G.S., Allen, B.R.

“…Monolithic W-band push-pull power amplifiers have been developed using 0.1-/spl mu/m AlGaAs/InGaAs/GaAs pseudomorphic T-gate power HEMT technology. The novel…”
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Reliability consideration of GaAs pHEMT Schottky diodes for mixer applications by Chou, Y.C., Leung, D., Biedenbender, M., Fordham, O., Grundbacher, R., Kan, Q., Liu, P.H., Eng, D., Lai, R., Chin, P., Block, T., Oki, A.

“…Factors affecting reliability performance of GaAs PHEMT Schottky diodes for mixer applications were investigated: the total gate periphery, gate feed…”
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Novel monolithic multifunctional balanced switching low-noise amplifiers by Lo, D.C.W., Wang, Huei, Allen, B.R., Dow, G.S., Kwo Wei Chang, Biedenbender, M., Lai, R., Sian Chen, Yang, D.

“…A novel multifunctional balanced switching low-noise amplifier (BSLNA) which can be used as a low-noise amplifier, a low-noise switch, or a broad-band 180/spl…”
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Submicron-gate InP power MISFET's with improved output power density at 18 and 20 GHz by Biedenbender, M.D., Kapoor, V.J., Shalkhauser, K.A., Messick, L.J., Nguyen, R., Schmitz, D., Jurgensen, H.

“…The microwave characteristics at 18 and 20 GHz of submicron-gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for…”
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Ion-implanted high microwave power indium phosphide transistors by Biedenbender, M.D., Kapoor, V.J., Messick, L.J., Nguyen, R.

“…Encapsulated rapid thermal annealing (RTA) has been used in the fabrication of indium phosphide (InP) power metal-insulator-semiconductor field-effect…”
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Highly efficient compact Q-band MMIC power amplifier using 2-mil substrate and partially-matched output by Lester, J.A., Hwang, Y., Chi, J., Lai, R., Biedenbender, M., Chow, P.D.

“…Presented is an 850 mW Q-band PHEMT MMIC power amplifier with a peak efficiency of 34% at 45.5 GHz, believed to be the highest reported at this power level and…”
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Fully-matched, high-efficiency Q-band 1 watt MMIC solid state power amplifier by Hwang, Y., Chow, P.D., Lester, J., Chi, J., Garske, D., Biedenbender, M., Lai, R.

“…A fully-matched, high-efficiency Q-band 1 watt MMIC power amplifier has developed. This chip utilized 2 mil-thick GaAs substrate to improve amplifier gain,…”
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