Sulfur-annealed Cu2SnS3 (CTS) thin films for solar cell applications

Sulfur-annealed Cu2SnS3 (CTS) thin films for solar cell applications

In this study, chemical bath deposition process was used to deposit Cu 2 SnS 3 (CTS) thin film onto stainless-steel substrate at room temperature. The investigation focused on the impact of sulfur annealing on the optoelectrical characteristics of the films, with the potential for solar cell applica...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics Vol. 35; no. 19; p. 1304
Main Authors: Bhise, Shobha M., Shelke, Harshad D., Al-Ahmed, Amir, Patil, Mahendra A.
Format: Journal Article
Language:English
Published: New York Springer US 01-07-2024
Springer Nature B.V
Subjects:
Annealing
Carrier transport
Characterization and Evaluation of Materials
Chemistry and Materials Science
Chloride
Copper sulfides
Efficiency
Electrochemical impedance spectroscopy
Electrodes
Electrolytes
Materials Science
Open circuit voltage
Optical and Electronic Materials
Photovoltaic cells
Physics
Room temperature
Short circuit currents
Solar cells
Spectrum analysis
Stainless steels
Substrates
Sulfur
Sulfurization
Temperature
Thin films
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Summary:In this study, chemical bath deposition process was used to deposit Cu 2 SnS 3 (CTS) thin film onto stainless-steel substrate at room temperature. The investigation focused on the impact of sulfur annealing on the optoelectrical characteristics of the films, with the potential for solar cell applications. X-ray diffraction analyses revealed the formation of tetragonal CTS after sulfurization at 400 °C. This confirms the presence of a ternary phase. Notably, absorption studies revealed direct transitions within the thin films, along with improved bandgap energies. These characteristics render that the as-deposited CTS thin films are well suited for potential use in solar cell applications. Upon annealing at 400 °C, the open-circuit voltage ( V oc ), short-circuit current ( I sc ), maximum voltage (mV), and maximum current ( I M ) of the CTS thin films experienced enhancement. Electrochemical impedance spectroscopy results reveal that the post-treatment of the film enhances the carrier transport mechanism between semiconductor–electrolyte junctions.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-024-12988-5