Search Results - "Bhat, Thirumaleshwara"

Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring by Nigam, Adarsh, Goel, Neeraj, Bhat, Thirumaleshwara N, Tawabur Rahman, Md, Dolmanan, Surani Bin, Qiao, Qiquan, Tripathy, Sudhiranjan, Kumar, Mahesh

“…•A MoS2 functionalized Au gated AlGaN/ GaN HEMT sensor has been developed for the detection of toxic Hg2+ ions.•The synthesis of MoS2 was performed by…”
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MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection by Nigam, Adarsh, Bhat, Thirumaleshwara N., Bhati, Vijendra Singh, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Kumar, Mahesh

“…This paper demonstrates a novel AlGaN/GaN high-electron mobility transistor (HEMT)-based cadmium ion (Cd 2+ ) sensor with mercaptopropionic acid (MPA) and…”
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Sensitive and Selective Detection of Pb2+ Ions Using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor by Nigam, Adarsh, Bhati, Vijendra Singh, Bhat, Thirumaleshwara N., Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Kumar, Mahesh

“…We report sensitive and selective AlGaN/GaN High Electron Mobility Transistor (HEMT)-based sensor for Lead ion (Pb 2+ ) detection. The gate region of the HEMT…”
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Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate by Nigam, Adarsh, Bhat, Thirumaleshwara N., Rajamani, Saravanan, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Kumar, Mahesh

“…In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate,…”
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Effect of Filler Content on the Performance of Epoxy/PTW Composites by Bhat, Thirumaleshwara, Raju, K., Prabhu, Ravikantha, Sudheer, M.

“…This paper presents the mechanical and tribological characteristics of potassium titanate whisker (PTW) reinforced epoxy composites. The effect of various test…”
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Contribution of mg dissolution on the age hardening characteristics of SiC reinforced Al-Si alloy composites by Ashwin Shetty, Thirumaleshwara Bhat, Poornesh Mangalore, Ananda Hegde, Sathyashankara Sharma, Gowrishankar M C, Srinivas D

“…Aluminium–Silicon (Al-Si) eutectic alloy matrix composites are widely used in engineering application. However, it is a well-known fact that this material is…”
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Atomic Scale Interface Manipulation, Structural Engineering, and Their Impact on Ultrathin Carbon Films in Controlling Wear, Friction, and Corrosion by Dwivedi, Neeraj, Yeo, Reuben J, Yak, Leonard J. K, Satyanarayana, Nalam, Dhand, Chetna, Bhat, Thirumaleshwara N, Zhang, Zheng, Tripathy, Sudhiranjan, Bhatia, Charanjit S

“…Reducing friction, wear, and corrosion of diverse materials/devices using <2 nm thick protective carbon films remains challenging, which limits the…”
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Transport and infrared photoresponse properties of InN nanorods/Si heterojunction by Kumar, Mahesh, Bhat, Thirumaleshwara N, Rajpalke, Mohana K, Roul, Basanta, Kalghatgi, Ajit T, Krupanidhi, S B

“…The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/ n -Si heterojunction grown by…”
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Exploring the Potential of Mesoporous Silica, SBA-15, as an Adsorbent for Light Hydrocarbon Separation by Newalkar, Bharat L, Choudary, Nettem V, Kumar, Prakash, Komarneni, S, Bhat, Thirumaleshwara S. G

“…Equilibrium adsorption isotherms for methane, ethane, ethylene, acetylene, propane, and propylene have been measured for the first time on mesoporous silica,…”
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Structural and optical properties of nonpolar (1 1 −2 0) a-plane GaN grown on (1 −1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy by Rajpalke, Mohana K., Roul, Basanta, Kumar, Mahesh, Bhat, Thirumaleshwara N., Sinha, Neeraj, Krupanidhi, S.B.

“…► Structural and optical study of a-plane GaN film grown on r-sapphire by PAMBE. ► HRXRD was used to determine the epitaxial relation of a-plane GaN with…”
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Valence band offset at GaN/β-Si3N4 and β-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy by Kumar, Mahesh, Roul, Basanta, Bhat, Thirumaleshwara N., Rajpalke, Mohana K., Kalghatgi, A.T., Krupanidhi, S.B.

“…Ultra thin films of pure β-Si3N4 (0001) were grown on Si (111) surface by exposing the surface to radio- frequency nitrogen plasma with a high content of…”
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Potential Adsorbent for Light Hydrocarbon Separation:  Role of SBA-15 Framework Porosity by Newalkar, Bharat L, Choudary, Nettem V, Turaga, Uday T, Vijayalakshmi, R. P, Kumar, Prakash, Komarneni, S, Bhat, Thirumaleshwara S. G

“…Samples of mesoporous silica SBA-15 with and without controlled framework microporosity were prepared under microwave hydrothermal conditions. These samples…”
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Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE by Roul, Basanta, Rajpalke, Mohana K., Bhat, Thirumaleshwara N., Kumar, Mahesh, Kalghatgi, A.T., Krupanidhi, S.B.

“…We present an extensive study on the structural, electrical and optical properties of InN thin films grown on c-Al2O3, GaN(130nm)/Al2O3, GaN(200nm)/Al2O3 and…”
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Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes by Roul, Basanta, Bhat, Thirumaleshwara N., Kumar, Mahesh, Rajpalke, Mohana K., Kalghatgi, A. T., Krupanidhi, S. B.

“…In this report, the current–voltage (I–V) characteristics of Au/GaN Schottky diodes have been carried out in the temperature range of 300–510 K. The estimated…”
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Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction by Bhat, Thirumaleshwara N, Roul, Basanta, Rajpalke, Mohana K, Kumar, Mahesh, Krupanidhi, S B

“…The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the…”
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Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions by Roul, Basanta, Bhat, Thirumaleshwara N., Kumar, Mahesh, Rajpalke, Mohana K., Sinha, Neeraj, Kalghatgi, A.T., Krupanidhi, S.B.

“…The electrical transport properties of InN/GaN heterostructure based Schottky junctions were studied over a wide temperature range of 200–500 K. The barrier…”
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Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE by Rajpalke, Mohana K., Bhat, Thirumaleshwara N., Roul, Basanta, Kumar, Mahesh, Misra, P., Kukreja, L.M., Sinha, Neeraj, Krupanidhi, S.B.

“…Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on…”
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Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE by Kumar, Mahesh, Rajpalke, Mohana K., Bhat, Thirumaleshwara N., Roul, Basanta, Sinha, Neeraj, Kalghatgi, A.T., Krupanidhi, S.B.

“…Indium nitride (InN) epilayers have been successfully grown by nitrogen-plasma-assisted molecular beam epitaxy (NPA-MBE) on Si (111) substrates using different…”
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Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions by Kumar, Mahesh, Roul, Basanta, Bhat, Thirumaleshwara N., Rajpalke, Mohana K., Kalghatgi, A. T., Krupanidhi, S. B.

“…GaN/Si3N4/n‐Si and InN/Si3N4/n‐Si heterojunctions (HJs) were fabricated using plasma‐assisted molecular beam epitaxy for a comparison study. Single‐crystalline…”
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Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE by Kumar, Mahesh, Bhat, Thirumaleshwara N., Rajpalke, Mohana K., Roul, Basanta, Kalghatgi, A.T., Krupanidhi, S.B.

“…In the present work, we report the growth of wurtzite InN epilayers on GaN/Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE). The growth…”
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