Search Results - "Bhat, Aasif Mohammad"
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AlGaN/GaN HEMT pH Sensor Simulation Model and Its Maximum Transconductance Considerations for Improved Sensitivity
Published in IEEE sensors journal (15-09-2021)“…In this work, AlGaN/GaN high electron mobility transistor (HEMT) pH sensing simulation model is presented along with the sensitivity analysis to different pH…”
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Performance Assessment of AlGaN/GaN HEMT for Human Serum Albumin Detection Using Charge Deduction Methodology
Published in IEEE sensors journal (15-05-2024)“…This article investigates the applicability of an open-gated high-electron-mobility transistor (HEMT) as a biosensing platform for human serum albumin (HSA)…”
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A theoretical approach to study the frequency dependent dielectric behavior of breast cancer cells using AlN buffer-based AlGaN/GaN HEMT
Published in Physica scripta (01-06-2024)“…Abstract The present study reports the detection of healthy (MDA-10) and malignant cells (MDA-MB-231) associated with breast cancer using high-quality AlN…”
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AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al2O3 as Sensing Membrane and Passivation
Published in IEEE transactions on nanotechnology (2023)“…Herein, we report the design and implementation of planar and circular aluminium gallium nitride/Gallium nitride high electron mobility transistor (AlGaN/GaN…”
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A novel and compact MOSFET-C only based grounded meminductor emulator and its application
Published in International journal of electronics and communications (01-08-2024)“…This article presents a grounded meminductor emulator architecture based on only MOSFETs and two capacitors. Proposed models do not use any extra components…”
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Recessed Trench Gate AlGaN/GaN HEMT for pH Monitoring: Design and Sensitivity Evaluation
Published in IEEE transactions on nanotechnology (01-07-2024)“…This work proposed a recessed trench gate AlGaN/GaN HEMT for a potential of hydrogen ion (<inline-formula><tex-math notation="LaTeX">\rm…”
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A comprehensive simulation study on dual segment AlGaN/GaN HEMT for mercury ion detection: Addressing steric hindrance and interfering ions
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-03-2024)“…This study compares the effectiveness of a single sensing segment (Sensor A) and a dual sensing segment (Sensor B), AlGaN/GaN HEMTs, for mercury ion detection…”
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Improved breakdown voltage mechanism in AlGaN/GaN HEMT for RF/Microwave applications: Design and physical insights of dual field plate
Published in Microelectronics and reliability (01-08-2023)“…This work investigated and proposed the source–gate dual field plate (SG-FP) AlGaN/GaN HEMT for different gate-to-drain drift distances with a fixed gate…”
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Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate
Published in Journal of electronic materials (01-11-2021)“…This paper investigates the DC and RF performance of a gate field plate (GFP) and proposed grated gate field plate (GGFP) AlGaN/GaN high electron mobility…”
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Design and Analysis of a Field Plate Engineered High Electron Mobility Transistor for Enhanced Performance
Published in Journal of electronic materials (01-07-2022)“…In this paper, the impact of drain drift region and vertical scaling on breakdown performance is investigated through exhaustive technology computer-aided…”
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Performance Analysis of MOS-HEMT as a Biosensor: A Dielectric Modulation Approach
Published in SILICON (01-10-2022)“…A dielectric modulated MOS-HEMT is investigated for different neutral and charged biomolecules with cavities embedded on the source side. To analyze the…”
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Performance Analysis of AlGaN MOSHEMT Based Biosensors for Detection of Proteins
Published in Transactions on electrical and electronic materials (01-06-2023)“…Proteins are existing in different condensations in samples of various origins and knowing their focus is especially important as there are different…”
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Virtually Doped Schottky Buried Metal Layer Planar Junctionless FET for SCE Suppression at sub-28nm Technology Nodes: Design, Simulation and Performance Investigation
Published in SILICON (01-06-2022)“…Herein we introduce and investigate a new architectural design strategy for planar single gate field effect transistors (SG-FETs) that delivers advantages from…”
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Virtually Doped Schottky Buried Metal Layer Planar Junctionless FET for SCE Suppression at sub-28nm Technology Nodes
Published in SILICON (01-06-2022)“…Herein we introduce and investigate a new architectural design strategy for planar single gate field effect transistors (SG-FETs) that delivers advantages from…”
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Gate All Around Junctionless Dielectric Modulated BioFET Based Hybrid Biosensor: Design, Simulation and Performance Investigation
Published in SILICON (01-07-2021)“…Here in this work, we demonstrate the concept of hybrid biosensor based on embedded cavity gate all around (GAA) junctionless field effect transistors (JLT)…”
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Gate All Around Junctionless Dielectric Modulated BioFET Based Hybrid Biosensor
Published in SILICON (01-07-2021)“…Here in this work, we demonstrate the concept of hybrid biosensor based on embedded cavity gate all around (GAA) junctionless field effect transistors (JLT)…”
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Design and analysis of high-performance double-gate ZnO nano-structured thin-film ISFET for pH sensing applications
Published in Microelectronics (01-07-2023)“…This paper reports a high-performance double-gate zinc-oxide thin-film ion-sensitive field-effect transistor (DG-ZnO-ISFET) for pH sensing applications. The…”
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Investigation of AlGaN/GaN HEMT for pH sensing applications and sensitivity optimization
Published in Superlattices and microstructures (01-12-2021)“…In this work, AlGaN/GaN HEMT pH sensitive response has been presented through extensive simulations demonstrating the effect of pH variation on channel…”
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AlGaN/GaN HEMT AC/DC Performance Analysis of Conventional and Gate Recessed MOS-HEMT With Temperature Variation
Published in 2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) (01-08-2019)“…AlGaN/AIN/GaN based conventional and recessed gate high electron mobility transistors (HEMTs) having Al 2 O 3 gate oxide have been investigated for…”
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