Search Results - "Bharathan, Jayesh"

  • Showing 1 - 10 results of 10
Refine Results
  1. 1

    Polymer electroluminescent devices processed by inkjet printing: I. Polymer light-emitting logo by Bharathan, Jayesh, Yang, Yang

    Published in Applied physics letters (25-05-1998)
    “…Inkjet printing (IJP) technology is a popular technology for desktop publishing. Since some of the conducting (or conjugated) polymers are solution…”
    Get full text
    Journal Article
  2. 2

    High efficiency GaN-based LEDs and lasers on SiC by Edmond, John, Abare, Amber, Bergman, Mike, Bharathan, Jayesh, Lee Bunker, Kristin, Emerson, Dave, Haberern, Kevin, Ibbetson, James, Leung, Michael, Russel, Phil, Slater, David

    Published in Journal of crystal growth (01-12-2004)
    “…Group III-nitride layers have been grown via metal-organic vapor-phase epitaxy (MOVPE) on single crystal-silicon carbide (SiC) substrates and fabricated into…”
    Get full text
    Journal Article Conference Proceeding
  3. 3

    Multicolor Organic Light-Emitting Diodes Processed by Hybrid Inkjet Printing by Chang, Shun-Chi, Liu, Jie, Bharathan, Jayesh, Yang, Yang, Onohara, Jun, Kido, Junji

    Published in Advanced materials (Weinheim) (01-06-1999)
    “…Inkjet printing (IJP) technology is an attractive alternative for producing OLEDs, due to its low‐cost, large‐area processing, and multicolor addressing…”
    Get full text
    Journal Article
  4. 4

    Dual-color polymer light-emitting pixels processed by hybrid inkjet printing by Chang, Shun-Chi, Bharathan, Jayesh, Yang, Yang, Helgeson, Roger, Wudl, Fred, Ramey, Michael B., Reynolds, John R.

    Published in Applied physics letters (02-11-1998)
    “…A hybrid inkjet printing (HIJP) technology, which combines a pin-hole free polymer buffer layer and an inkjet printed polymer layer, allows the patterning of…”
    Get full text
    Journal Article
  5. 5

    Poisson Ratio of Epitaxial Germanium Films Grown on Silicon by Bharathan, Jayesh, Narayan, Jagdish, Rozgonyi, George, Bulman, Gary E.

    Published in Journal of electronic materials (2013)
    “…An accurate knowledge of elastic constants of thin films is important in understanding the effect of strain on material properties. We have used residual…”
    Get full text
    Journal Article
  6. 6

    Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures by Bharathan, Jayesh, Zhou, Honghui, Narayan, Jagdish, Rozgonyi, George, Bulman, Gary E.

    Published in Journal of electronic materials (01-09-2014)
    “…We used x-ray diffraction and transmission electron microscopy to study the mechanism of thermal misfit strain relaxation in epitaxial Ge films grown on…”
    Get full text
    Journal Article
  7. 7

    Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition by Bharathan, Jayesh, Narayan, Jagdish, Rozgonyi, George, Bulman, Gary E.

    Published in Journal of electronic materials (01-10-2013)
    “…We studied the microstructural characteristics and electrical properties of epitaxial Ge films grown on Si(001) substrates by x-ray diffraction, atomic force…”
    Get full text
    Journal Article
  8. 8

    Germanium-on-Silicon Strain Engineered Materials for Improved Device Performance Grown by Chemical Vapor Deposition by Bharathan, Jayesh Moorkoth

    Published 01-01-2013
    “…The primary goal of this research is to develop a chemical vapor deposition process for growing epitaxial films of germanium on silicon (001) substrates with…”
    Get full text
    Dissertation
  9. 9

    Organic/polymeric electroluminescent devices processed by hybrid ink-jet printing by Yang, Yang, Chang, Shun-Chi, Bharathan, Jayesh, Liu, Jie

    “…Ink-jet printing (IJP) technology is a popular technology for desktop publishing. Since some of the conducting (or conjugated) organic molecules and polymers…”
    Get full text
    Journal Article
  10. 10

    Improvement in leakage characteristics of Ge-on-Si photodetectors by Bharathan, J., Bulman, G. E.

    “…Germanium (Ge) offers a distinct advantage over silicon (Si) in terms of its superior electron and hole mobility. In addition, its small direct bandgap of 0.8…”
    Get full text
    Conference Proceeding