Search Results - "Bhan, R."
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1
Analysis of Crosstalk in Networked Arrays of Resistive Sensors
Published in IEEE sensors journal (01-04-2011)“…In this paper, we present the analysis of the crosstalk limitation in 2-D resistive sensor arrays that utilize shared row and column connections for simplified…”
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2
Design and Simulation of Vertical Bi-Directional Fringe Field Tuning of New Improved MEMS Accelerometer Using SOI Technology for Stress Compensation
Published in SILICON (01-11-2022)“…A new conceptual utilization of Silicon on Insulator (SOI) wafer is reported for bi-directional vertical electrostatic fringe field tuning of the Micro Electro…”
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3
Virtual Ground Technique for Crosstalk Suppression in Networked Resistive Sensors
Published in IEEE sensors journal (01-02-2011)“…Two-dimensional resistive sensor arrays that utilize shared row and column connections to simplify the interconnect complexity suffer from the crosstalk…”
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4
A new discrete circuit for readout of resistive sensor arrays
Published in Sensors and actuators. A. Physical. (15-01-2009)“…In this paper, we present a method that simplifies the interconnect complexity of N × M resistive sensor arrays from N × M to N + M. In this method, we propose…”
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5
Diffusion induced residual stress in comb-type microaccelerometer structure
Published in Journal of materials science. Materials in electronics (01-09-2014)“…This paper presents the effect of residual stresses due to deep boron diffusion on microaccelerometer structure. The microaccelerometer structure was simulated…”
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6
Fabrication of spiral inter-digitated terminal (IDT) structure of electroplated gold on quartz substrate and progressive microplasma generation
Published in Journal of materials science. Materials in electronics (01-02-2018)“…This paper discussed about the progressive microplasma generation in planar spiral inter-digitated terminal (IDT) structure. The IDT structures (with…”
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7
A sub-circuit model of a microbolometer IR detector and its experimental validation
Published in Sensors and actuators. A. Physical. (01-11-2011)“…In this paper, we present a generic circuit model of microbolometer Infrared detector that can be used to simulate the electrical and thermal performance of…”
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8
Crosstalk suppression in networked resistive sensor arrays using virtual ground technique
Published in International journal of electronics (01-11-2013)“…In 2D resistive sensor arrays, the interconnections are reduced considerably by sharing rows and columns among various sensor elements in such a way that one…”
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9
A new circuit model of HgCdTe photodiode for SPICE simulation of integrated IRFPA
Published in Infrared physics & technology (01-11-2014)“…•A new SPICE compatible sub-circuit model developed for HgCdTe photodiodes.•The SPICE parameter of the proposed model extracted for experimental MWIR HgCdTe…”
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10
Principal component analysis of non-uniformity in electrical characteristics of HgCdTe photodiode arrays
Published in Infrared physics & technology (01-11-2013)“…•Presented a theoretical approach of modeling non-uniformity in HgCdTe Photo-diode arrays.•Identification of characteristic signatures in dynamic…”
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11
Exploring novel methods to achieve sensitivity limits for high operating temperature infrared detectors
Published in Infrared physics & technology (01-11-2013)“…A review of high operating temperature (HOT) infrared (IR) photon detector technology vis-a-vis material requirements, device design and state of the art…”
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12
Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films
Published in Journal of electronic materials (01-03-2013)“…CdTe thin films of 500 Å thickness prepared by thermal evaporation technique were analyzed for leakage current and conduction mechanisms. Metal–insulator–metal…”
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13
Reducing Readout Complexity of Large Resistive Sensor Arrays
Published in IEEE sensors journal (01-11-2008)“…In this paper, we present a method that simplifies the interconnect complexity of {\rm N} \times {\rm M} resistive arrays from {\rm N} \times {\rm M} to {\rm…”
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14
Study of performance degradation in Titanium microbolometer IR detectors due to elevated heating
Published in Infrared physics & technology (01-07-2011)“…► Study of heat tolerance. ► Used pulsed current with varying duty cycle. ► Observed TCR degradation. Heating of thermal detectors is a major reliability…”
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15
Characterization of area arrays of microbolometer-based un-cooled IR detectors without using ROIC
Published in Sensors and actuators. A. Physical. (15-02-2008)“…We present the characterization of microbolometer area arrays being developed for IR imaging applications. Here, we propose a technique that does not use…”
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16
Tapered-Based Novel Thermal Compensation Techniques for Enhanced Performance of MEMS-Based Gyroscope
Published in 2024 Second International Conference on Emerging Trends in Information Technology and Engineering (ICETITE) (22-02-2024)“…Understanding and mitigating the impact of temperature on MEMS-based gyroscope performance is crucial for their reliable use in various applications including…”
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Conference Proceeding -
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Improved high resistivity ZnS films on HgCdTe for passivation of infrared devices
Published in Infrared physics & technology (01-09-2010)“…We report the results of DC current–voltage characteristics, resistivity and conduction mechanism of 2500 Å thick ZnS films deposited by e-beam evaporation…”
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18
Bias dependence of photo-response in HgCdTe photodiodes due to series resistance
Published in Infrared physics & technology (01-03-2011)“…In this paper, we present the experimental results of photo-response measurements performed on Hg 0.7Cd 0.3Te photodiodes and report the dependence of measured…”
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19
Effect of Excessive Bias Heating on a Titanium Microbolometer Infrared Detector
Published in IEEE sensors journal (01-11-2008)“…In a metal film infrared microbolometer, the responsivity is improved by high bias current to compensate for its low-temperature coefficient of resistance…”
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20
Modeling of dark characteristics of mercury cadmium telluride n +–p junctions
Published in Infrared physics & technology (01-04-2003)“…Dark dynamic impedance versus applied bias voltage characteristics of HgCdTe n +–p junctions has been modelled here using a recently proposed [Infrared Phys…”
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