Search Results - "Bezotosnyi, V V"
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1
Analysis of a Device Based on a Multicore Fiber with Tapering Cores for Radiation Summation in Multichannel Laser Systems
Published in Bulletin of the Lebedev Physics Institute (01-07-2024)“…The proposed fiber-optic device is an array of tapering cores in a common cladding. Possible applications of the device for radiation summation in multielement…”
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2
Composite Ceramic Nd3+:YAG/Cr4+:YAG Laser Elements
Published in Journal of Russian laser research (01-05-2019)“…We produce composite ceramic laser elements Nd 3+ :YAG/Cr 4+ :YAG using two different methods, i.e., ( 1 ) layer-by-layer uniaxial pressing in a metallic mold…”
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3
New Design of Two-Dimensional Array of Laser Diodes With Direct Convective Cooling
Published in IEEE journal of quantum electronics (01-02-2022)“…The new approach to cool of Laser Diode Arrays (LDAs) is proposed. A coolant flows in regions between Laser Diode Bars (LDBs) in LDA and directly removes heat…”
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4
Dual-wavelength generation at the transverse mode locking in a diode-end-pumped passively Q-switched Nd:YLF/Cr4+:YAG laser
Published in Bulletin of the Lebedev Physics Institute (2017)“…A dual-wavelength generation at 1047 and 1053 nm is implemented in a diode-endpumped Nd:YLF laser Q -switched by Cr:YAG. This generation is obtained by the…”
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5
60-W continuous wave laser diode arrays emitting at a wavelength of 808 nm
Published in Bulletin of the Lebedev Physics Institute (01-12-2016)“…Samples of cw laser diode arrays (LDAs) with an output power higher than 60 W emitting in the spectral range of 808 nm are developed and fabricated. Main…”
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6
Application of diode lasers in light-oxygen cancer therapy
Published in Semiconductors (Woodbury, N.Y.) (2014)“…Singlet oxygen is the lowest energy electronic excited state of the oxygen molecule which is able to damage living cells. This property has long been used for…”
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High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide
Published in Semiconductors (Woodbury, N.Y.) (01-03-2008)“…The parameters of high-power multimode laser diodes featuring a radiation wavelength of 808 nm obtained on the basis of asymmetric heterostructures with an…”
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8
Localized infrared radiation-induced hyperthermia sensitized by laser-ablated silicon nanoparticles for phototherapy applications
Published in Applied surface science (30-06-2020)“…[Display omitted] •Laser-ablated silicon nanoparticles can be used as sensitizers for photohyperthermia.•Short excitation pulses lead to enhanced hyperthermia…”
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9
Effect of thermoelastic stresses on radiation spectra of CW laser diode bars
Published in Optics and laser technology (01-12-2022)“…•The anomalies in LDB radiation spectra were observed for the first time, and explained with 3D thermoelastic stress modeling.•The model of LDB chip…”
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10
Wide-Aperture Diode Laser with Vertical Cavity
Published in Physics of wave phenomena (01-06-2024)“…A new type of diode laser with a scalable (fundamentally unlimited) aperture for the output optical beam has been proposed and calculated. Such an aperture can…”
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11
Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm
Published in Semiconductors (Woodbury, N.Y.) (2014)“…The output characteristics of high-power laser diodes for a wavelength of 808 nm, which were fabricated on the basis of GaAsP/AlGaAs/GaAs strained…”
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12
Transverse mode locking of Stokes radiation in diode end-pumped Nd:YVO4 laser passively Q-switched by Cr4+:YAG
Published in Bulletin of the Lebedev Physics Institute (01-06-2016)“…Transverse mode locking of the Stokes component generated in the mode of stimulated Raman scattering self-conversion by a pulsed diode end-pumped Nd:YVO 4…”
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13
Thermal condition of high-power laser diodes
Published in Bulletin of the Lebedev Physics Institute (01-03-2015)“…Light-current and current-voltage characteristics of a set of high-power laser diodes of the spectral region of 980 nm, fabricated by the authors, are…”
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14
Limiting parameters of high-power single-stripe laser diodes in the range of 800–808 nm in the pulsed mode
Published in Semiconductors (Woodbury, N.Y.) (2014)“…Experimental results on the study of the output parameters of high-power continuous-wave (cw) laser diodes operating in the pulsed mode and the results of…”
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15
Lasing threshold of Nd-doped crystal, ceramic, and glass lasers under spatially inhomogeneous diode pumping
Published in Bulletin of the Lebedev Physics Institute (01-03-2013)“…The effect of transverse mode locking on the dependence of the threshold pump power on the cavity length in Nd-doped media lasers with longitudinal…”
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16
Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure
Published in Applied physics. B, Lasers and optics (01-03-2008)“…It has been shown that the cavity trapped amplified luminescence (CTAL) flux formed within the active region of a powerful 1.02 μm InGaAs/AlGaAs DQW laser…”
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17
Two-frequency lasing in the Nd:YLF laser with a lens-shaped active element and longitudinal diode pumping
Published in Bulletin of the Lebedev Physics Institute (01-10-2011)“…In the laser with lens-shaped Nd:YLF [100] active element, the dependence of polarization and frequency of the radiation on the cavity length is studied under…”
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18
Bleaching effect in passive regions of powerful 1.02 Delta mm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure
Published in Applied physics. B, Lasers and optics (01-03-2008)“…It has been shown that the cavity trapped amplified luminescence (CTAL) flux formed within the active region of a powerful 1.02 Delta *mm InGaAs/AlGaAs DQW…”
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19
High-power laser diodes of the spectral region of 808 nm and 980 nm
Published in Bulletin of the Lebedev Physics Institute (01-05-2010)“…A technique for assembling high-power laser diodes emitting at 808 and 980 nm was developed, which stably provides high radiation parameters when using one of…”
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20
High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide
Published in Semiconductors (Woodbury, N.Y.) (15-03-2008)“…The parameters of high-power multimode laser diodes featuring a radiation wavelength of 808 nm obtained on the basis of asymmetric heterostructures with an…”
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