Nanoclusters of MoO3−x embedded in an Al2O3 matrix engineered for customizable mesoscale resistivity and high dielectric strength

Nanoclusters of MoO3−x embedded in an Al2O3 matrix engineered for customizable mesoscale resistivity and high dielectric strength

We have synthesized a material consisting of conducting metal oxide (MoO3−x) nanoclusters embedded in a high-dielectric-strength insulator (Al2O3) matrix. The resistivity of this material can be customized by varying the concentration of the MoO3−x nanoclusters. The Al2O3 protects the MoO3−x from st...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters Vol. 102; no. 25
Main Authors: Tong, William M., Brodie, Alan D., Mane, Anil U., Sun, Fuge, Kidwingira, Françoise, McCord, Mark A., Bevis, Christopher F., Elam, Jeffrey W.
Format: Journal Article
Language:English
Published: 24-06-2013
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have synthesized a material consisting of conducting metal oxide (MoO3−x) nanoclusters embedded in a high-dielectric-strength insulator (Al2O3) matrix. The resistivity of this material can be customized by varying the concentration of the MoO3−x nanoclusters. The Al2O3 protects the MoO3−x from stoichiometry change, thus conserving the number of carriers and maintaining a high dielectric strength. This composite material is grown by atomic layer deposition, a thin film deposition technique suitable for coating 3D structures. We applied these atomic layer deposition composite films to our 3D electron-optical micro electrical mechanical systems devices and greatly improved their performance.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4811480