Search Results - "Betsa, V. V."

Ferroelectric and Semiconducting Properties of Sn2P2S6 Crystals with Intrinsic Vacancies by Vysochanskii, Yu, Glukhov, K., Maior, M., Fedyo, K., Kohutych, A., Betsa, V., Prits, I., Gurzan, M.

“…Thermoelectric properties of Sn 2 P 2 S 6 (SPS) ferroelectric-semiconductor crystals confirm their hole-type conductivity at room temperature which inverses to…”
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Effect of nonstoichiometry on the thermoelectric properties of Tl4TiS4 crystals by Sabov, M. Yu, Sevryukov, D. V., Galagovets, I. V., Betsa, V. V., Peresh, E. Yu

“…Stoichiometric (1), Tl 2 S-enriched (2), and TiS 2 -enriched (3) Tl 4 TiS 4 crystals (with deviations from stoichiometry within the homogeneity range of the…”
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Photoresponse spectral investigations for anisotropic semiconductor InSe by Kovalyuk, Z.D., Katerinchuk, V.N., Betsa, T.V.

“…Photoresponse spectra of anisotropic InSe crystals are investigated depending on the orientation of an illuminated sample surface with respect to light…”
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Ferroelectric and Semiconducting Properties of Sn^sub 2^P^sub 2^S^sub 6^ Crystals with Intrinsic Vacancies by Vysochanskii, Yu, Glukhov, K, Maior, M, Fedyo, K, Kohutych, A, Betsa, V, Prits, I, Gurzan, M

“…Thermoelectric properties of Sn2P2S6 (SPS) ferroelectric-semiconductor crystals confirm their hole-type conductivity at room temperature which inverses to the…”
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Ferroelectric and Semiconducting Properties of Sn sub(2)P sub(2)S sub(6) Crystals with Intrinsic Vacancies by Vysochanskii, Yu, Glukhov, K, Maior, M, Fedyo, K, Kohutych, A, Betsa, V, Prits, I, Gurzan, M

“…Thermoelectric properties of Sn sub(2)P sub(2)S sub(6) (SPS) ferroelectric-semiconductor crystals confirm their hole-type conductivity at room temperature…”
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Ferroelectric and Semiconducting Properties of Sn 2 P 2 S 6 Crystals with Intrinsic Vacancies by Vysochanskii, Yu, Glukhov, K., Maior, M., Fedyo, K., Kohutych, A., Betsa, V., Prits, I., Gurzan, M.

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Photoelectric properties of the n-SnSSe-p-InSe heterojunctions by Katerinchuk, V. N., Kovalyuk, Z. D., Netyaga, V. V., Betsa, T. V.

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Oxide-p-InSe heterojunctions on (110)-oriented InSe crystal substrates by Katerinchuk, V. N., Kovalyuk, Z. D., Betsa, T. V., Kaminskii, V. M., Netyaga, V. V.

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Heterojunctions produced from the layered semiconductors SnS1.9Se0.1 and GaSe by KATERINCHUK, V. N, KOVALYUK, Z. D, NETYAGA, V. V, BETSA, T. V

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Mechanism of adsorption of oxygen and hydrogen on surface of solids by Betsa, V. V., Zhikharev, V. N., Popik, Yu. V.

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Optical elements based on chalcophile glasses by Betsa, V. V., Bilinets, Yu. Yu, Khiminets, V. V., Fedak, V. V., Kondrat'eva, V. G., Golovach, I. I.

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Abstracts of papers deposited at viniti by Kuz'menko, G. I., Deikova, G. M., Rubanov, V. N., Pashaev, B. P., Seleznev, V. V., Biyachuev, A. S., Sultanov, Sh. A., Pevzner, Sh. M., Betsa, V. V., Popik, Yu. V., Turyanitsa, I. D., Namitokov, K. K., Pryanchikov, E. N., Krasnozhenov, E. P., Tsendrovskii, V. A., Pershin, A. A., Pkhalagov, Yu. A., Laptei, D. A., Perminov, V. N., Kocherbaev, T. K., Musaev, K. M., Kostenko, D. S.

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