Evidence of Be3P2 formation during growth of Be-doped phosphorus-based semiconductor compounds

In this work, we present evidence that Be3P2 microcrystals are formed in Be-doped phosphorus-based semiconductor compounds grown by chemical beam epitaxy. Our results suggest that microcrystal formation occurs when high Be concentrations (>1018 cm−3) and temperatures higher than 500 °C are used f...

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Bibliographic Details
Published in:	Applied physics letters Vol. 74; no. 24; pp. 3669 - 3671
Main Authors:	de Carvalho, M. M. G., Betinni, J., Pudenzi, M. A. A, Cardoso, L. P., Cotta, M. A.
Format:	Journal Article
Language:	English
Published:	14-06-1999
Online Access:	Get full text
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Summary:	In this work, we present evidence that Be3P2 microcrystals are formed in Be-doped phosphorus-based semiconductor compounds grown by chemical beam epitaxy. Our results suggest that microcrystal formation occurs when high Be concentrations (>1018 cm−3) and temperatures higher than 500 °C are used for crystal growth. The main consequence of Be3P2 formation is a high phosphorus consumption close to these microcrystals that causes a large density of P vacancies in the semiconductor layer. This results in reduced electrical mobility, lattice parameter reduction, and poor crystalinity of the film in general.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.123216