Search Results - "Besmehn, A."

Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys by Schulte-Braucks, C, von den Driesch, N, Glass, S, Tiedemann, A. T, Breuer, U, Besmehn, A, Hartmann, J.-M, Ikonic, Z, Zhao, Q. T, Mantl, S, Buca, D

“…(Si)­GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct…”
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Evidence for Extinct Vanadium-49 in Presolar Silicon Carbide Grains from Supernovae by Hoppe, P, Besmehn, A

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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs by Lopes, J.M.J., Durğun Özben, E., Roeckerath, M., Littmark, U., Lupták, R., Lenk, St, Luysberg, M., Besmehn, A., Breuer, U., Schubert, J., Mantl, S.

“…In this contribution we present results on the structural and electrical properties of amorphous REScO 3 ( RE = La, Gd, Tb, Sm) and LaLuO 3 thin films. The…”
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Integration of LaLuO3 (κ ~ 30) as High-κ, Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process by ÖZBEN, E. Durgun, LOPES, J. M. J, NICHAU, A, SCHNEE, M, LENK, S, BESMEHN, A, BOURDELLE, K. K, ZHAO, Q. T, SCHUBERT, J, MANTL, S

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Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high- Kappa /metal gate stacks on Si by Nichau, A, SchAOfer, A, Knoll, L, Wirths, S, Schram, T, Ragnarsson, L-A, Schubert, J, Bernardy, P, Luysberg, M, Besmehn, A, Breuer, U, Buca, D, Mantl, S

“…The continued device scaling demands the reduction of the equivalent oxide thickness (EOT) below 1 nm. For HfO2-based gate stacks, the interfacial SiO2 limits…”
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Chromium vaporization of the ferritic steel Crofer22APU and ODS Cr5Fe1Y2O3 alloy by KONYSHEVA, E, SEELING, U, BESMEHN, A, SINGHEISER, L, HILPERT, K

“…The chromium vaporization rate of the Crofer22APU steel as compared to Cr5Fe1Y2O3 alloy was studied under humidified air at 800 °C over a period of up to 1300…”
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Investigation of laser scribing of a-Si:H from the film side for solar modules using a UV laser with ns pulses by Ku, S., Haas, S., Pieters, B. E., Zastrow, U., Besmehn, A., Ye, Q., Rau, U.

“…This paper investigates laser scribing of a-Si:H layers from the film side with a ns pulsed UV laser for thin-film solar modules. We compared the contact…”
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Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric by Roeckerath, M., Heeg, T., Lopes, J.M.J., Schubert, J., Mantl, S., Besmehn, A., Myllymäki, P., Niinistö, L.

“…LaLuO 3 thin films have been deposited with atomic layer deposition on Si substrates using β-diketonate compounds for the rare earth metals and ozone as the…”
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New Attempts to Understand Nanodiamond Stardust by Ott, U., Besmehn, A., Farouqi, K., Hallmann, O., Hoppe, P., Kratz, K.-L., Melber, K., Wallner, A.

“…We report on a concerted effort aimed at understanding the origin and history of the pre-solar nanodiamonds in meteorites including the astrophysical sources…”
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Formation of GaN nanodots on Si (1 1 1) by droplet nitridation by Debnath, R.K., Stoica, T., Besmehn, A., Jeganathan, K., Sutter, E., Meijers, R., Lüth, H., Calarco, R.

“…GaN nanodots (NDs) are obtained by Ga metallic droplet formation on Si (1 1 1) substrates followed by their nitridation. The size and density of Ga droplets…”
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Surface characterisation and interface studies of high-k materials by XPS and TOF-SIMS by Besmehn, A., Scholl, A., Rije, E., Breuer, U.

“…High-k dielectric LaAlO 3 (LAO) films on Si(100) were studied by TOF-SIMS and XPS to look for diffusion processes during deposition and additional thermal…”
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The Preparation and Preliminary Characterisation of Eight Geological MPI-DING Reference Glasses for In-Situ Microanalysis by Jochum, Klaus Peter, Dingwell, Donald B., Rocholl, Alexander, Stoll, Brigitte, Hofmann, Albrecht W., Becker, S., Besmehn, A., Bessette, D., Dietze, H.-J., Dulski, P., Erzinger, J., Hellebrand, E., Hoppe, P., Horn, I., Janssens, K., Jenner, G.A., Klein, M., McDonough, W.F., Maetz, M., Mezger, K., Müker, C., Nikogosian, I.K., Pickhardt, C., Raczek, I., Rhede, D., Seufert, H.M., Simakin, S.G., Sobolev, A.V., Spettel, B., Straub, S., Vincze, L., Wallianos, A., Weckwerth, G., Weyer, S., Wolf, D., Zimmer, M.

“…Eight silicate glasses were prepared by directly fusing and stirring 50‐100 g each of basalt, andesite, komatiite, peridotite, rhyolite, and quartz‐diorite…”
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LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process by Nichau, A., Durğun Özben, E., Schnee, M., Lopes, J.M.J., Besmehn, A., Luysberg, M., Knoll, L., Habicht, S., Mussmann, V., Luptak, R., Lenk, St, Rubio-Zuazo, J., Castro, G.R., Buca, D., Zhao, Q.T., Schubert, J., Mantl, S.

“…► MOSFETs with LaLuO3 ternary rare earth oxide. ► High temperature CMOS compatible processing up to 1000°C/5s. ► EELS and HAXPES interface and composition…”
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Castellated structures for ITER: the influence of the shape of castellation on the impurity deposition and fuel accumulation in gaps by Litnovsky, A, Philipps, V, Wienhold, P, Krieger, K, Sergienko, G, Kreter, A, Schmitz, O, Samm, U, Mertens, Ph, Kirschner, A, Droste, S, Richter, S, Breuer, U, Scholl, A, Besmehn, A, Xu, Y

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Polymorphous GdScO3 as high permittivity dielectric by Schäfer, A., Rahmanizadeh, K., Bihlmayer, G., Luysberg, M., Wendt, F., Besmehn, A., Fox, A., Schnee, M., Niu, G., Schroeder, T., Mantl, S., Hardtdegen, H., Mikulics, M., Schubert, J.

“…Four different polymorphs of GdScO3 are assessed theoretically and experimentally with respect to their suitability as a dielectric. The calculations carried…”
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Polymorphous GdScO 3 as high permittivity dielectric by Schäfer, A., Rahmanizadeh, K., Bihlmayer, G., Luysberg, M., Wendt, F., Besmehn, A., Fox, A., Schnee, M., Niu, G., Schroeder, T., Mantl, S., Hardtdegen, H., Mikulics, M., Schubert, J.

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A NanoSIMS study of Si- and Ca-Ti-isotopic compositions of presolar silicon carbide grains from supernovae by Besmehn, Astrid, Hoppe, Peter

“…We report results from NanoSIMS isotopic measurements on 37 presolar silicon carbide grains of type X which are believed to have formed in the ejecta of…”
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Reduction of silicon dioxide interfacial layer to 4.6 AA EOT by Al remote scavenging in high- Kappa /metal gate stacks on Si by Nichau, A, Schaefer, A, Knoll, L, Wirths, S, Schram, T, Ragnarsson, L-Aa, Schubert, J, Bernardy, P, Luysberg, M, Besmehn, A, Breuer, U, Buca, D, Mantl, S

“…The continued device scaling demands the reduction of the equivalent oxide thickness (EOT) below 1 nm. For HfO sub(2)-based gate stacks, the interfacial SiO…”
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Reduction of silicon dioxide interfacial layer to 4.6Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si by Nichau, A., Schäfer, A., Knoll, L., Wirths, S., Schram, T., Ragnarsson, L.-Å., Schubert, J., Bernardy, P., Luysberg, M., Besmehn, A., Breuer, U., Buca, D., Mantl, S.

“…•Al diffusion into gate stack leads to EOT reduction.•Process reduces the EOT at low temperature (400°C) and is suitable for replacement gate…”
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Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si: Insulating Films on Semiconductors 2013 by NICHAU, A, SCHÄFER, A, BREUER, U, BUCA, D, MANTL, S, KNOLL, L, WIRTHS, S, SCHRAM, T, RAGNARSSON, L.-Å, SCHUBERT, J, BERNARDY, P, LUYSBERG, M, BESMEHN, A

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