Search Results - "Beserman, R"

Structure of PECVD Si:H films for solar cell applications by Edelman, F, Chack, A, Weil, R, Beserman, R, Khait, Yu.L, Werner, P, Rech, B, Roschek, T, Carius, R, Wagner, H, Beyer, W

“…The structure of undoped SiːH films and solar cells deposited under different hydrogen concentration and substrate temperatures were studied. The…”
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Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate by Magidson, V., Regelman, D. V., Beserman, R., Dettmer, K.

“…Nominal Ge islands were grown by a molecular beam epitaxy technique on a Si(001) substrate. Island positions and shapes were measured by atomic force…”
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Kinetics of laser-induced low-temperature crystallization of amorphous silicon by Khait, Yu. L., Beserman, R., Chack, A., Weil, R., Beyer, W.

“…A brief report on experimental and theoretical studies of the kinetics of the laser-induced crystallization (LIC) in undoped amorphous hydrogenated silicon is…”
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Ultrasound treatment for porous silicon photoluminescence enhancement by El-Bahar, A., Stolyarova, S., Chack, A., Weil, R., Beserman, R., Nemirovsky, Y.

“…One of the most important properties of the porous silicon is its strong visible photoluminescence. However the intensity and the shape of the…”
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MOCVD growth of ordered Cd(1−x)ZnxTe epilayers by Cohen, K, Stolyarova, S, Amir, N, Chack, A, Beserman, R, Weil, R, Nemirovsky, Y

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Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells by Levy, M., Khait, Yu. L., Beserman, R., Sa’ar, A., Thierry-Mieg, V., Planel, R.

“…The influence of interband photoexcitation intensity on the photoluminescence line shape was investigated in GaAs/AlGaAs modulation-doped asymmetric structure…”
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Comparison between the crystallization processes by laser and furnace annealing of pure and doped a-Si:H by Beserman, R, Khait, Yu.L, Chack, A, Weil, R, Beyer, W

“…A comparison between the annealing processes is made for undoped hydrogenated amorphous Si (a-Si:H), boron and phosphorus doped amorphous silicon. It is found…”
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Characterization of CdTe substrates and MOCVD Cd1-xZnxTe epilayers by LEVY, M, AMIR, N, KHANIN, E, NEMIROVSKY, Y, BESERMAN, R

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Valence band splitting in Cd(1-x)ZnxTe epilayers by COHEN, K, BESERMAN, R, STOLYAROVA, S, WEIL, R, NEMIROVSKY, Y

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Cross-section of Si:H solar cells prepared by PECVD at the edge of crystallization by Edelman, F, Chack, A, Werner, P, Scholz, R, Weil, R, Beserman, R, Roschek, T, Rech, B, Beyer, W

“…The cross-section of p–i–n Si:H solar cells deposited by PECVD at 13.56 MHz on ZnO-covered glass substrates was studied by TEM and Raman spectroscopy. Two…”
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Characterization of CdTe substrates and MOCVD Cd1-XZnXTe epilayers by Raman, photoluminescence and X-ray diffraction techniques by LEVY, M, AMIR, N, KHANIN, E, MURANEVICH, A, NEMIROVSKY, Y, BESERMAN, R

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Hardening of CdZnTe by Acoustic Wave Treatment by Edelman, F., Zeckzer, A., Grau, P., Stolyarova, S., Weil, R., Berner, A., Beserman, R., Nemirovsky, Y.

“…Indentation experiments on monocrystalline {111} Cd0.96Zn0.04Te samples showed that acoustic wave treatment (AWT) before indentation resulted in crystal…”
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Dielectric and pyroelectric properties of ordered CdZnTe layers grown by MOCVD by Chack, A., Cohen, K., Stolyarova, S., Nemirovsky, Y., Beserman, R., Weil, R.

“…Cd 1− x Zn x Te (0.1⩽ x⩽0.86) layers were epitaxially deposited on (1 0 0) CdTe and on Cd 0.96Zn 0.04Te substrates by MOCVD, and some of their electrical and…”
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Spontaneous Ordering in Thin Polycrystalline Cd1-xZnxTe Films during Annealing by Edelman, F., Stolyarova, S., Chack, A., Zakharov, N., Werner, P., Beserman, R., Weil, R., Nemirovsky, Y.

“…Polycrystalline films of Cd1—xZnxTe (0 < x < 1) of ≈0.1 μm thickness on glass substrates were grown by Metal Organic Chemical Vapor Deposition at 480 °C. X‐ray…”
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Composition and structure of Ge islands grown on Si(001) and of SiGe grown on Si mesa by Regelman, D.V, Magidson, V, Beserman, R, Dettmer, K

“…The thickness, the composition and the quality, of Si 1− x Ge x epilayers grown by molecular beam epitaxy on Si mesa structures, have been studied by Raman…”
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Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si1−xGex multiple quantum wells by Adoram, B., Krapf, D., Shappir, J., Sa’ar, A., Levy, M., Beserman, R., Thomas, S. G., Wang, K. L.

“…Thermal relaxation processes due to strain relaxation and Si/Ge interdiffusion were investigated in pseudomorphic p-type SiGe/Si quantum wells using…”
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Modulated resonant Raman and photoluminescence spectroscopy of Bragg confined asymmetric coupled quantum wells by Levy, M, Kapon, R, Sa'ar, A, Beserman, R, Thierry-Mieg, V, Planel, R

“…Electronic Bragg mirrors were used to confine carriers at energy levels above the barrier height in asymmetric coupled quantum wells. Two classes of above…”
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Titanium metallization of Si/Ge alloys and superlattices by Freiman, W., Beserman, R., Dettmer, K.

“…The formation of C49 and C54 Ti(Si 1−y Ge y ) 2 germanosilicide phases in a Si 0.65Ge 0.35 totally relaxed alloy and in a Si 16Ge 10 strained layer…”
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Kinetics of interdiffusion in strained nanometer period Si/Ge superlattices studied by Raman scattering by Dettmer, K., Freiman, W., Levy, M., Khait, Yu. L., Beserman, R.

“…Intermixing time ti and interdiffusion coefficients D of nanometer periods Si/Ge strained layer superlattices (SLSs) were measured by Raman scattering…”
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Comparison of different Si/Ge alloy buffer concepts for (SimGen)p superlattices by DETTMER, K, BEHNER, U, BESERMAN, R

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