Search Results - "Besaucele, H."

High energy and average power solid-state UV laser for industrial applications by Bruel, N., Casagrande, O., Derycke, C., Tiago, T., Bihel, A., Caradec, F., Simon-Boisson, C., Besaucele, H.

“…High energy and average power solid-state UV laser involves several challenges to manage degradation due to UV radiations. Recent results achieved in this…”
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Defect kinetics and dopant activation in submicrosecond laser thermal processes by Huet, K., Fisicaro, G., Venturini, J., Besaucèle, H., La Magna, A.

“…Defect evolution in ion implanted c-Si at the submicrosecond time scales during a laser thermal annealing process is investigated by means of kinetic…”
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Laser Thermal Annealing: A low thermal budget solution for advanced structures and new materials by Huet, K., Toque-Tresonne, I., Mazzamuto, F., Emeraud, T., Besaucele, H.

“…With the growing demand for improved performance, increased storage capacity and more functionality, the industry is facing challenges which require disruptive…”
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100Hz Joule Class Ultra-Short Pulses TiSa Laser by Pellegrina, A., Kabacinski, A., Jeandet, A., Leroux, V., Lavenu, L., Chalus, O., Casagrande, O., Simon-Boisson, C., Besaucele, H.

“…Joule class lasers at 100Hz with ultra-short pulse involve a lot of challenges to manage thermal issues in the amplifiers as well as in the compressors. Recent…”
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Defect kinetics and dopant activation in submicrosecond laserthermal processes by Huet, K., Fisicaro, G., Venturini, J., Besaucèle, H., La Magna, A.

“…Defect evolution in ion implanted c-Si at the submicrosecond time scales during a laser thermal annealing process is investigated by means of kinetic…”
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Damage evolution in implanted silicon by pulsed excimer laser annealing by Fisicaro, G., La Magna, A., Piccitto, G., Privitera, V., Huet, K., Venturini, J., Besaucele, H.

“…The evolution of the implantation damage during a Pulsed Laser thermal annealing process is investigated by means of an accurate modeling which could…”
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Experimental and theoretical analysis of dopant activation in double implanted silicon by pulsed laser thermal annealing by Huet, K., Boniface, C., Fisicaro, G., Desse, F., Variam, N., Erokhin, Y., La Magna, A., Privitera, V., Schuhmacher, M., Besaucele, H., Venturing, J.

“…A collection of slides from the author's conference presentation shows dopant activation by pulsed laser thermal annealing. It also discusses single pulse deep…”
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Activation of ion implanted Si for backside processing by ultra-fast laser thermal annealing: Energy homogeneity and micro-scale sheet resistance by Huet, K., Lin, R., Boniface, C., Desse, F., Petersen, D. H., Hansen, O., Variam, N., La Magna, A., Schuhmacher, M., Jensen, A., Nielsen, P.F., Besaucele, H., Venturing, J.

“…In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high…”
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