Search Results - "Bertin, Marco"

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  1. 1

    Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias by Meneghini, Matteo, Stocco, Antonio, Bertin, Marco, Marcon, Denis, Chini, Alessandro, Meneghesso, Gaudenzio, Zanoni, Enrico

    Published in Applied physics letters (16-01-2012)
    “…This paper describes a detailed analysis of the time-dependent degradation kinetics of GaN-based high electron mobility transistors submitted to reverse-bias…”
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    Journal Article
  2. 2

    HDAC4 regulates satellite cell proliferation and differentiation by targeting P21 and Sharp1 genes by Marroncelli, Nicoletta, Bianchi, Marzia, Bertin, Marco, Consalvi, Silvia, Saccone, Valentina, De Bardi, Marco, Puri, Pier Lorenzo, Palacios, Daniela, Adamo, Sergio, Moresi, Viviana

    Published in Scientific reports (22-02-2018)
    “…Skeletal muscle exhibits a high regenerative capacity, mainly due to the ability of satellite cells to replicate and differentiate in response to appropriate…”
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    Journal Article
  3. 3

    OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown by Meneghini, Matteo, Cibin, Giulia, Bertin, Marco, Hurkx, Godefridus Adrianus Maria, Ivo, Ponky, Sonsky, Jan, Croon, Jeroen A., Meneghesso, Gaudenzio, Zanoni, Enrico

    Published in IEEE transactions on electron devices (01-06-2014)
    “…This paper reports the experimental demonstration of a novel degradation mechanism of high-power AlGaN/GaN high electron mobility transistors (HEMTs), that is,…”
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    Journal Article
  4. 4

    Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface by Meneghini, Matteo, Bertin, Marco, Stocco, Antonio, dal Santo, Gabriele, Marcon, Denis, Malinowski, Pawel E., Chini, Alessandro, Meneghesso, Gaudenzio, Zanoni, Enrico

    Published in Applied physics letters (22-04-2013)
    “…We report on a detailed investigation of the degradation of AlGaN/GaN Schottky diodes grown on silicon, submitted to high reverse-bias. The analyzed devices…”
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    Journal Article
  5. 5

    Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions by Meneghini, Matteo, Zanandrea, Alberto, Rampazzo, Fabiana, Stocco, Antonio, Bertin, Marco, Cibin, Giulia, Pogany, Dionyz, Zanoni, Enrico, Meneghesso, Gaudenzio

    Published in Japanese Journal of Applied Physics (01-08-2013)
    “…This paper reports on an extensive analysis of the electrical and optical properties of GaN-based high electron mobility transistors (HEMTs) biased in a…”
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    Journal Article
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    Absence of the RING domain in MID1 results in patterning defects in the developing human brain by Frank, Sarah, Gabassi, Elisa, Käseberg, Stephan, Bertin, Marco, Zografidou, Lea, Pfeiffer, Daniela, Brennenstuhl, Heiko, Falk, Sven, Karow, Marisa, Schweiger, Susann

    Published in Life science alliance (01-04-2024)
    “…The X-linked form of Opitz BBB/G syndrome (OS) is a monogenic disorder in which symptoms are established early during embryonic development. OS is caused by…”
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    Journal Article
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    Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model by Meneghini, M., Stocco, A., Bertin, M., Ronchi, N., Chini, A., Marcon, D., Meneghesso, G., Zanoni, E.

    “…This paper analyzes the reverse-bias degradation of GaN-based HEMTs. Experimental evidence collected within this work demonstrate that, (i) when submitted to…”
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    Conference Proceeding
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