Search Results - "Berson, B.E."
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1
High resistivity sputtered tantalum films for microelectronic applications
Published in Proceedings of the IEEE (01-12-1965)Get full text
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2
L-band epitaxial Gunn oscillators
Published in Proceedings of the IEEE (01-01-1967)“…Gunn oscillators have been made from epitaxially grown GaAs n + -n-n + "sandwich" structures. Peak powers up to 56 watts have been obtained in L-band with an…”
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3
High-efficiency transferred electron oscillators
Published in Proceedings of the IEEE (01-01-1969)“…Results of material research and circuit development for high-efficiency GaAs transferred electron oscillators are described, Single-chip devices have been…”
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4
High peak power epitaxial GaAs oscillators
Published in IEEE transactions on electron devices (01-09-1967)“…Pulsed epitaxial GaAs Gunn oscillators have been operated in resonant circuits with a power x (frequency) 2 product of 690 watts (GHz) 2 and 18.6 percent…”
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5
Microwave Circuits for High-Efficiency Operation of Transferred Electron Oscillators
Published in IEEE transactions on microwave theory and techniques (01-11-1970)“…Compact circuits for obtaining high-efficiency operation of high-power transferred electron oscillators (TEOs) in L-band are described. One is a coaxial…”
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6
Coupled TEM bar circuit for L-band silicon avalanche oscillators
Published in IEEE journal of solid-state circuits (01-12-1970)“…See abstr. B25331 of 1970…”
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7
Contributors, Nov. 1970
Published in IEEE transactions on microwave theory and techniques (01-11-1970)Get full text
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