Search Results - "Berson, B.E."

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    L-band epitaxial Gunn oscillators by Berson, B.E., Narayan, S.Y.

    Published in Proceedings of the IEEE (01-01-1967)
    “…Gunn oscillators have been made from epitaxially grown GaAs n + -n-n + "sandwich" structures. Peak powers up to 56 watts have been obtained in L-band with an…”
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    Journal Article
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    High-efficiency transferred electron oscillators by Reynolds, J.F., Berson, B.E., Enstrom, R.E.

    Published in Proceedings of the IEEE (01-01-1969)
    “…Results of material research and circuit development for high-efficiency GaAs transferred electron oscillators are described, Single-chip devices have been…”
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    Journal Article
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    High peak power epitaxial GaAs oscillators by Narayan, S.Y., Berson, B.E.

    Published in IEEE transactions on electron devices (01-09-1967)
    “…Pulsed epitaxial GaAs Gunn oscillators have been operated in resonant circuits with a power x (frequency) 2 product of 690 watts (GHz) 2 and 18.6 percent…”
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    Journal Article
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    Microwave Circuits for High-Efficiency Operation of Transferred Electron Oscillators by Reynolds, J.F., Berson, B.E., Enstrom, R.E.

    “…Compact circuits for obtaining high-efficiency operation of high-power transferred electron oscillators (TEOs) in L-band are described. One is a coaxial…”
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    Journal Article
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