Search Results - "Bernardis, S."

Electrical fragmentation as a novel route for the refinement of quartz raw materials for trace mineral impurities by Dal Martello, E., Bernardis, S., Larsen, R.B., Tranell, G., Di Sabatino, M., Arnberg, L.

“…The availability of a selective liberation method to eliminate contaminating minerals in quartz is crucial to achieve high purity silicon feedstock for solar…”
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Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy by Koblmüller, G., Gallinat, C. S., Bernardis, S., Speck, J. S., Chern, G. D., Readinger, E. D., Shen, H., Wraback, M.

“…The authors demonstrate the impact of growth kinetics on the surface and structural properties of N-face InN grown by molecular beam epitaxy. Superior surface…”
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Local melting in silicon driven by retrograde solubility by Fenning, D.P., Newman, B.K., Bertoni, M.I., Hudelson, S., Bernardis, S., Marcus, M.A., Fakra, S.C., Buonassisi, T.

“…High point-defect enthalpy of formation leads to retrograde solubility for a number of solutes in silicon, especially d-shell transition metals. We present…”
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Electronic excitations in vanadium oxide phthalocyanine studied via resonant soft X-ray emission and resonant inelastic X-ray scattering by Zhang, Yufeng, Wang, Shancai, Learmonth, Timothy, Plucinski, Lukasz, Matsuura, A.Y., Bernardis, Sarah, O’Donnell, Cian, Downes, James E., Smith, Kevin E.

“…The electronic structure of the organic semiconductor vanadium oxide phthalocyanine has been studied using resonant inelastic X-ray scattering and X-ray…”
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Copper in compensated p- and n-type Czochralski silicon: Diffusivity, influence on the majority charge carrier density and mobility by Gaspar, G., Modanese, C., Bernardis, S., Enjalbert, N., Arnberg, L., Dubois, S., Di Sabatino, M.

“…Copper contamination risks are present throughout the whole crystalline silicon solar cell process flow, namely during ingot growth processes using recycled…”
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Electronic structure in thin film organic semiconductors studied using soft X-ray emission and resonant inelastic X-ray scattering by Zhang, Yufeng, Downes, James E., Wang, Shancai, Learmonth, Timothy, Plucinski, Lukasz, Matsuura, A.Y., McGuinness, Cormac, Glans, Per-Anders, Bernardis, Sarah, O'Donnell, Cian, Smith, Kevin E.

“…The electronic structure of thin films of the organic semiconductors copper and vanadyl (VO) phthalocyanine (Pc) has been measured using resonant soft X-ray…”
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Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells by Bertoni, M I, Hudelson, S, Newman, B K, Bernardis, S, Fenning, D P, Dekkers, H F W, Cornagliotti, E, Zuschlag, A, Micard, G, Hahn, G, Coletti, G, Lai, B, Buonassisi, T

“…In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline…”
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Resonant shake-up satellites in photoemission at the Ga 3p photothreshold in GaN by Plucinski, L., Learmonth, T., Colakerol, L., Bernardis, S., Zhang, Yufeng, Glans, P.-A., Smith, K.E., Zakharov, A.A., Nyholm, R., Grzegory, I., Suski, T., Porowski, S., Friel, I., Moustakas, T.D.

“…Photoemission spectra recorded near the Ga 3p photothreshold from GaN have been found to contain satellites of the main Ga 3d emission line. The intensity of…”
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Hybrid waveguides for optically pumped amplifiers by Saini, S., Hong, C.-Y., Bernardis, S., Pfaff, N., Kimerling, L. C., Michel, J.

“…A hybrid waveguide based on simultaneous propagation of photonic crystal (PC) and total internal reflection confined optical modes is introduced for a scheme…”
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Optimization of the surface and structural quality of N-face InNgrown by molecular beam epitaxy by Koblmüller, G., Gallinat, C. S., Bernardis, S., Speck, J. S., Chern, G. D., Readinger, E. D., Shen, H., Wraback, M.

“…The authors demonstrate the impact of growth kinetics on the surface and structural properties of N-face InN grown by molecular beam epitaxy. Superior surface…”
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Photoemission Study of Sulfur and Oxygen Adsorption on GaN() by Plucinski,L., Wang, S., Colakerol, L., Bernardis, S., Zhang, Y., ODonnell, C., Smith, K., Friel, I., Moustakas, T.

“…The surface electronic structure of thin film n-type GaN(000{bar 1}) has been studied using high resolution angle resolved photoemission spectroscopy. Clean…”
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Characterisation of Electron Transport in MBE Grown Indium Nitride by Fehlberg, T.B., Umana-Membreno, G.A., Nener, B.D., Parish, G., Gallinat, C.S., Koblmuller, G., Bernardis, S., Speck, J.S.

“…Transport properties of multiple electron species in two samples of indium nitride (InN) grown by molecular beam epitaxy (MBE) have been measured. Variable…”
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Ultrasonographic contrast agent: evaluation of time-intensity curves in the characterisation of solitary thyroid nodules by Argalia, G, De Bernardis, S, Mariani, D, Abbattista, T, Taccaliti, A, Ricciardelli, L, Faragona, S, Gusella, P M, Giuseppetti, G M

“…To evaluate whether the time-intensity curve can improve characterisation of solitary thyroid nodules. From June to December 2000 we studied 61 patients (16…”
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Granular cell tumor of the esophagus. Report of a case and review of the literature by Bernardis, S, Gregorini, S D, Lespi, P J, Gregorio, S D

“…Granular cell tumor of the esophagus, also called Abrikossof's tumor, is a rare and mostly benign neoplasm which is associated with cancer in 11% of cases…”
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Ultralow energy, integrated GeSi electroabsorption modulators on SOI by Jifeng Liu, Beals, M., Pomerene, A., Bernardis, S., Rong Sun, Jing Cheng, Kimerling, L.C., Michel, J.

“…We report a waveguide-integrated, gigahertz GeSi electroabsorption modulator on SOI with a 10 dB extinction ratio at 1540 nm, a ultralow energy consumption of…”
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