Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse

he aim of this study is to propose a failure mode analysis of a grounded gate nMOS transistor under high current pulse according to TLP stress. The experimental values are compared with numerical results issued of 3D simulation. EMMI views are correlated with physical extractions for failure mode an...

Full description

Saved in:

Bibliographic Details
Published in:	Microelectronics and reliability Vol. 42; no. 9; pp. 1299 - 1302
Main Authors:	Galy a, P., Berland a, V., Foucher b, B., Guilhaume b,c, A., Chante c, J.P., Bardy d, S., Blanc d, F.
Format:	Journal Article
Language:	English
Published:	Elsevier Ltd 01-09-2002 Elsevier
Subjects:	Electric power Engineering Sciences PROTECTION DEVICES ELECTROSTATIC DISCHARGE ESD
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	he aim of this study is to propose a failure mode analysis of a grounded gate nMOS transistor under high current pulse according to TLP stress. The experimental values are compared with numerical results issued of 3D simulation. EMMI views are correlated with physical extractions for failure mode analysis during this electrical stress. Thus, it appears that the thermal distribution is inhomogeneously established. (C) 2002 Elsevier Science Ltd. All rights reserved.
ISSN:	0026-2714 1872-941X
DOI:	10.1016/S0026-2714(02)00138-5