Search Results - "Berkovits, V. L."

Plasmon Spectroscopy of Anisotropic Gold Nanoclusters on GaAs(001) Surface Passivated by Sulphur Atoms by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Alekseev, P. A., Soldatenkov, F. Yu, Levitskii, V. A.

“…This work demonstrates how to create the structures Au/GaAs with perfect on-surface gold nanoclusters. In doing so, used is covering the GaAs substrate with…”
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Effect of Chemical Passivation of GaAs(001) Surface on Anisotropy and Orientation of Gold Nanoclusters Formed on It and Their Plasmons by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Alekseev, P. A., Soldatenkov, F. Yu, Levitskii, V. A.

“…The principal role of chemical passivation of GaAs surface in the formation on it of oriented anisotropic nanoclusters of gold is discussed. The nanoclusters…”
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Optical and Electronic Properties of Passivated InP(001) Surfaces by Dementev, P. A., Dementeva, E. V., Lvova, T. V., Berkovits, V. L., Lebedev, M. V.

“…The effect of chemical passivation in solutions of ammonium sulfide (NH 4 ) 2 S on the optical and electronic properties of the surface n -InP (001) is…”
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Optical Spectroscopy of Schottky Nanostructures Au/GaAs: Plasmon Resonances and Anisotropy by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Soldatenkov, F. Y., Alekseev, P. A., Levitskii, V. S.

“…— The Schottky nanostructures Au/GaAs with Au nanoclusters are prepared by annealing of thin gold films deposited on nitridized GaAs(001) surface. The…”
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Gold Nanoclusters at the Interface Au/GaAs(001): Preparation, Characterization, and Plasmonic Spectroscopy by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Soldatenkov, F. Yu, Makarenko, I. V., Levitskii, V. S.

“…Local plasmons of gold nanoclusters formed at Au/GaAs interface are observed and investigated. The gold nanoclusters are prepared by thermal annealing of thin…”
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Structural properties of GaAs surfaces nitrided in hydrazine-sulfide solutions by Berkovits, V.L., Masson, L., Makarenko, I.V., Ulin, V.P.

“…The surface structure of GaAs(1 0 0), (1 1 1)A, and (1 1 1)B substrates nitrided through the wet chemical treatment in hydrazine-sulfide solution have been…”
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Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Alekseev, P. A., Soldatenkov, F. Yu, Nashchekin, A. V., Khakhulin, S. A., Komkov, O. S.

“…Using high-temperature annealing of thin gold nanofilms deposited onto the (001) surface of doped p -GaAs crystal with an ultrathin oxide layer, the…”
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Wet chemical nitridation of GaAs (100) by hydrazine solution for surface passivation by Berkovits, V. L., Ulin, V. P., Losurdo, M., Capezzuto, P., Bruno, G., Perna, G., Capozzi, V.

“…A mild wet nitridation procedure using hydrazine-based solutions has been developed for GaAs (100) surface passivation. Both x-ray photoelectron spectroscopy…”
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Plasmonic anisotropy of In nanocluster arrays on InAs(001) surface observed by differential reflectance spectroscopy by Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Gordeeva, A.B., Petrov, V.N.

“…Reflectance anisotropy (RA) spectroscopy is applied to study indium nanocluster arrays formed on InAs(001) crystal surface by electrochemical treating. The…”
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Optical study of surface dimers on sulfur-passivated (001)GaAs by BERKOVITS, V. L, PAGET, D

“…Reflectance anisotropy (RA) spectrosocpy has been used to study at 300 K the intrinsic optical transitions on sulfur-passivated surfaces. The spectra allow to…”
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Effects of the local field and inherent deformation in reflectance anisotropy spectra of AIIIBV semiconductor surfaces by Berkovits, V. L., Gordeeva, A. B., Kosobukin, V. A.

“…Reflectance anisotropy (RA) spectra of naturally oxidized GaAs(001) and InAs(001) surfaces reveal features that differ qualitatively from those caused by…”
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Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces by Berkovits, V.L., Gordeeva, A.B., Kosobukin, V.A.

“…Oxidized (001) surfaces of both GaAs crystals and Ga 0.7Al 0.3As alloys are found to exhibit characteristic reflectance anisotropy (RA) spectra in the range…”
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Clean reconstructed InAs(1 1 1) A and B surfaces using chemical treatments and annealing by Tereshchenko, O.E., Paget, D., Rowe, A.C.H., Berkovits, V.L., Chiaradia, P., Doyle, B.P., Nannarone, S.

“…Well-ordered clean InAs(1 1 1) A and B surfaces have been prepared using HCl–isopropanol solutions and characterized using low-energy electron diffraction and…”
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Origin of the broadening of surface optical transitions of As-rich and Ga-rich GaAs(0 0 1) by Paget, D., Tereshchenko, O.E., Gordeeva, A.B., Berkovits, V.L., Onida, G.

“…We have investigated the temperature dependence of the reflectance anisotropy spectra of clean GaAs(0 0 1), with a particular emphasis on the width of the…”
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Chemical and photochemical processes in sulfide passivation of GaAs(100): In situ optical study and photoemission analysis by Berkovits, V. L., Ulin, V. P., Paget, D., Bonnet, J. E., L’vova, T. V., Chiaradia, P., Lantratov, V. M.

“…We demonstrate a new approach to study semiconductor surface passivation. This approach, which we have applied to the case of GaAs(100) passivation by sodium…”
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Creation and plasmon anisotropy spectroscopy of wedge-shaped gold nanoclusters conditioned by GaAs(001) surface by Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Alekseev, P.A., Borodin, B.R., Soldatenkov, F.Yu, Nashchekin, A.V., Khakhulin, S.A., Komkov, O.S.

“…•Wedge-shaped gold nanoclusters are created on gallium arsenide surface.•Elongated Au-wedge nanoclusters are equally oriented on GaAs crystal surface.•Gold…”
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Effect of surface reconstruction on the low-temperature oxidation of InAs(100): Optical investigations by Berkovits, V.L., Witkowski, N., Borensztein, Y., Paget, D.

“…Using reflectance anisotropy spectroscopy (RAS), after identifying the main spectral lines, for the InAs(001) surfaces, we demonstrate that low-temperature…”
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Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy by Ivanov, S. V., Lyublinskaya, O. G., Vasilyev, Yu. B., Kaygorodov, V. A., Sorokin, S. V., Sedova, I. V., Solov’ev, V. A., Meltser, B. Ya, Sitnikova, A. A., L’vova, T. V., Berkovits, V. L., Toropov, A. A., Kop’ev, P. S.

“…Asymmetric (6.7–300)-nm-thick InAs quantum wells (QWs) confined between AlAsSb and CdMgSe barriers have been fabricated by molecular-beam epitaxy. A special…”
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Origin of the optical anisotropy of GaAs (001) by Berkovits, V.L., Chiaradia, P., Paget, D., Gordeeva, A.B., Goletti, C.

“…We present a detailed experimental investigation of the room temperature optical anisotropy of clean GaAs(001) surfaces, and of the change of this anisotropy…”
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Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation by Alekseev, P. A, Dunaevskiy, M. S, Kirilenko, D. A, Smirnov, A. N, Davydov, V. Yu, Berkovits, V. L

“…We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The…”
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