Search Results - "Berges, U."

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  1. 1

    A detailed look beneath the surface: Evidence of a surface reconstruction beneath a capping layer by Krull, D., Tesch, M.F., Schönbohm, F., Lühr, T., Keutner, C., Berges, U., Mertins, H.-Ch, Westphal, C.

    Published in Applied surface science (30-03-2016)
    “…[Display omitted] •Demonstration of a detailed look into internal interface structures.•Close-up view to an internal surface beneath a capping layer.•Resolving…”
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    Journal Article
  2. 2

    Structural investigation of the three-layer system MgO/Fe/GaAs(001) by means of photoelectron spectroscopy and diffraction by Handschak, D., Lühr, T., Schönbohm, F., Döring, S., Keutner, C., Berges, U., Westphal, C.

    “…We report a combined high-resolution photoemission (XPS) and photoelectron diffraction (XPD) investigation of the three layer system MgO/Fe/GaAs(001). Each…”
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    Journal Article
  3. 3

    Thermal stability of an ultrathin hafnium oxide film on plasma nitrided Si(100) by Skaja, K., Schönbohm, F., Weier, D., Lühr, T., Keutner, C., Berges, U., Westphal, C.

    Published in Surface science (01-10-2013)
    “…We report on the thermal stability of an ultrathin hafnium oxide film on a plasma nitrided Si(100) surface. The ultrathin silicon nitride buffer layer was…”
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    Journal Article
  4. 4

    The local adsorption of pyridine on Si(100) a combined PES and XPD study by Weier, D., Lühr, T., Beimborn, A., Schönbohm, F., Döring, S., Berges, U., Westphal, C.

    Published in Surface science (01-10-2011)
    “…The chemical and geometrical properties of the system pyridine on Si(100) are investigated in a combined photoelectron spectroscopy (XPS) and photoelectron…”
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    Journal Article
  5. 5

    Photoelectron spectroscopy (PES) and photoelectron diffraction (XPD) studies on the local adsorption of cyclopentene on Si(100) by Weier, D., Lühr, T., Beimborn, A., Schönbohm, F., Döring, S., Berges, U., Westphal, C.

    Published in Surface science (01-09-2010)
    “…We investigated the chemical and geometrical characteristics of the system cyclopentene on Si(100) in a combined photoelectron spectroscopy (PES) and…”
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    Journal Article
  6. 6

    Determination of the source of two extra components in Si 2p photoelectron spectra of the SiO2/Si(1 0 0 ) interface by Dreiner, S, Schurmann, M, Krause, M, Berges, U, Westphal, C

    “…Ultrathin silicon oxide films were thermally grown on Si(100). High resolution photoelectron spectra of the Si 2p core--level were recorded at a photon energy…”
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    Journal Article
  7. 7

    Evolution of chemical states within the HfO2/Si(100) interface upon annealing, prepared by direct electron beam evaporation by FLÜCHTER, C. R, WEIER, D, SCHÜRMANN, M, BERGES, U, DÖRING, S, WESTPHAL, C

    Published in Surface science (01-08-2008)
    “…We demonstrate the preparation of the system HfO2/Si(1 0 0) by direct evaporation of hafnium dioxide from a specially prepared electron beam evaporator…”
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    Journal Article
  8. 8

    Structural and electronic analysis of Hf on Si(1 1 1) surface studied by XPS, LEED and XPD by Carazzolle, M.F., Schürmann, M., Flüchter, C.R., Weier, D., Berges, U., de Siervo, A., Landers, R., Kleiman, G.G., Westphal, C.

    “…In this work, we present a systematic electronic and structural study of the Hf-silicide formation upon annealing on Si(1 1 1) surface. The electronic…”
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    Journal Article
  9. 9

    The plane-grating monochromator beamline at the U55 undulator for surface and interface studies at DELTA by Westphal, C., Berges, U., Dreiner, S., Follath, R., Krause, M., Schäfers, F., Schirmer, D., Schürmann, M.

    “…A beamline for light energies between 55 and 1500 eV is currently commissioned at DELTA, an university-operated synchrotron facility. Light from an undulator…”
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  10. 10

    Structure analysis of the system Hafnium/Silicon ( 1 0 0 ) by means of X-ray photoelectron spectroscopy and X-ray photoelectron diffraction (XPD) by Flüchter, C.R., de Siervo, A., Weier, D., Schürmann, M., Berges, U., Dreiner, S., Carazzolle, M.F., Landers, R., Kleiman, G.G., Westphal, C.

    “…Due to the ongoing miniaturization of semiconductor devices new gate dielectrics are required for future applications. In this work we investigated hafnium…”
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    Journal Article Conference Proceeding
  11. 11

    Photoelectron spectroscopy (XPS) and photoelectron diffraction (XPD) studies on the system hafnium silicide and hafnium oxide on Si(1 0 0) by Weier, D., Flüchter, C., de Siervo, A., Schürmann, M., Dreiner, S., Berges, U., Carazzolle, M.F., Pancotti, A., Landers, R., Kleiman, G.G., Westphal, C.

    “…Continuous down-scaling of silicon based transistors results in device lengths of less than 100 nm. This requires a reduction of the gate dielectric thickness…”
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    Journal Article Conference Proceeding
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    Magnetocrystalline anisotropy in x-ray magnetic linear dichroism at the 3 p edges of crystalline Fe thin films by Tesch, M. F., Legut, D., Mertins, H.-Ch, Gilbert, M. C., Jansing, C., Hamrle, J., Rusz, J., Oppeneer, P. M., Bürgler, D. E., Schneider, C. M., Gaupp, A., Berges, U.

    “…X-ray magnetic linear dichroism spectra measured in reflection (XMLD-R) on crystalline bcc Fe thin films across the 3 p absorption edges are reported. A series…”
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    Journal Article
  14. 14

    Der Zorn Gottes in der Prophetie und Poesie Israels auf dem Hintergrund altorientalischer Vorstellungen by Berges, U.

    Published in Biblica (01-01-2004)
    “…The theme of divine anger is not peripheral to YHWH's revelation of himself but central to it (cf. inter alia Exod 34,6-7). When the instances of YHWH's anger…”
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    Evolution of chemical states within the HfO 2/Si(1 0 0) interface upon annealing, prepared by direct electron beam evaporation by Flüchter, C.R., Weier, D., Schürmann, M., Berges, U., Döring, S., Westphal, C.

    Published in Surface science (2008)
    “…We demonstrate the preparation of the system HfO 2/Si(1 0 0) by direct evaporation of hafnium dioxide from a specially prepared electron beam evaporator…”
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    Journal Article
  17. 17

    Ultrathin SiO 2-films on 4H-SiC(0 0 0 1) studied by angle-scanned photoelectron diffraction by Schürmann, M., Dreiner, S., Berges, U., Westphal, C.

    “…X-ray photoelectron spectroscopy and angle-scanned photoelectron diffraction were used to investigate thermally grown ultrathin SiO 2 films on 4H-SiC(0 0 0 1)…”
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    Journal Article
  18. 18

    Sb/Si(1 1 0) 2×3—a photoelectron diffraction study by Schürmann, M., Dreiner, S., Berges, U., Westphal, C.

    Published in Applied surface science (15-05-2003)
    “…The Sb/Si(110) 2×3 surface has been investigated by means of X-ray photoelectron diffraction (XPD). Low kinetic energies of the photoelectrons have been chosen…”
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    Journal Article
  19. 19

    Determination of the source of two extra components in Si 2p photoelectron spectra of the SiO 2/Si(1 0 0 ) interface by Dreiner, S., Schürmann, M., Krause, M., Berges, U., Westphal, C.

    “…Ultrathin silicon oxide films were thermally grown on Si(1 0 0 ). High resolution photoelectron spectra of the Si 2p core-level were recorded at a photon…”
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    Journal Article
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