Search Results - "Bergamaschini, Roberto"

Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments by Albani, Marco, Bergamaschini, Roberto, Barzaghi, Andrea, Salvalaglio, Marco, Valente, Joao, Paul, Douglas J., Voigt, Axel, Isella, Giovanni, Montalenti, Francesco

“…The development of three-dimensional architectures in semiconductor technology is paving the way to new device concepts for various applications, from quantum…”
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Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals by Falub, Claudiu V., von Känel, Hans, Isa, Fabio, Bergamaschini, Roberto, Marzegalli, Anna, Chrastina, Daniel, Isella, Giovanni, Müller, Elisabeth, Niedermann, Philippe, Miglio, Leo

“…Quantum structures made from epitaxial semiconductor layers have revolutionized our understanding of low-dimensional systems and are used for ultrafast…”
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Semiconductor Heteroepitaxy by Bergamaschini, Roberto, Vitiello, Elisa

“…The quest for high-performance and scalable devices required for next-generation semiconductor applications inevitably passes through the fabrication of…”
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Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability by Salvalaglio, Marco, Zaumseil, Peter, Yamamoto, Yuji, Skibitzki, Oliver, Bergamaschini, Roberto, Schroeder, Thomas, Voigt, Axel, Capellini, Giovanni

“…We present the morphological evolution obtained during the annealing of Ge strips grown on Si ridges as a prototypical process for 3D device architectures and…”
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Optically reconfigurable polarized emission in Germanium by De Cesari, Sebastiano, Bergamaschini, Roberto, Vitiello, Elisa, Giorgioni, Anna, Pezzoli, Fabio

“…Light polarization can conveniently encode information. Yet, the ability to tailor polarized optical fields is notably demanding but crucial to develop…”
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Extreme time extrapolation capabilities and thermodynamic consistency of physics-inspired neural networks for the 3D microstructure evolution of materials via Cahn–Hilliard flow by Lanzoni, Daniele, Fantasia, Andrea, Bergamaschini, Roberto, Pierre-Louis, Olivier, Montalenti, Francesco

“…Abstract A Convolutional Recurrent Neural Network (CRNN) is trained to reproduce the evolution of the spinodal decomposition process in three dimensions as…”
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Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales by Lanzoni, Daniele, Rovaris, Fabrizio, Martín-Encinar, Luis, Fantasia, Andrea, Bergamaschini, Roberto, Montalenti, Francesco

“…A convolutional neural network is trained on a large dataset of suitably randomized film profiles and corresponding elastic energy densities ρɛ, computed by…”
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Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach by Masullo, Marco, Bergamaschini, Roberto, Albani, Marco, Kreiliger, Thomas, Mauceri, Marco, Crippa, Danilo, La Via, Francesco, Montalenti, Francesco, von Känel, Hans, Miglio, Leo

“…3C-SiC is a promising material for low-voltage power electronic devices but its growth is still challenging. Heteroepitaxy of 3C-SiC on Si micrometer-sized…”
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Dislocation-Free SiGe/Si Heterostructures by Montalenti, Francesco, Rovaris, Fabrizio, Bergamaschini, Roberto, Miglio, Leo, Salvalaglio, Marco, Isella, Giovanni, Isa, Fabio, von Känel, Hans

“…Ge vertical heterostructures grown on deeply-patterned Si(001) were first obtained in 2012 (C.V. Falub et al., Science2012, 335, 1330–1334), immediately…”
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Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study by Bollani, Monica, Fedorov, Alexey, Albani, Marco, Bietti, Sergio, Bergamaschini, Roberto, Montalenti, Francesco, Ballabio, Andrea, Miglio, Leo, Sanguinetti, Stefano

“…We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in…”
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Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A by Tuktamyshev, Artur, Fedorov, Alexey, Bietti, Sergio, Tsukamoto, Shiro, Bergamaschini, Roberto, Montalenti, Francesco, Sanguinetti, Stefano

“…We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition…”
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Faceting of Equilibrium and Metastable Nanostructures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes by Salvalaglio, Marco, Backofen, Rainer, Bergamaschini, Roberto, Montalenti, Francesco, Voigt, Axel

“…Several crystalline structures are metastable or kinetically frozen out-of-equilibrium states in the phase space. When the corresponding lifetime is…”
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Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study by Bergamaschini, Roberto, Montalenti, Francesco, Miglio, Leo

“…[Display omitted] •Morphology and composition changes during crystal growth set by a phase-field model.•Sunburst segregation in core/shell nanowires is…”
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In‐Plane Nanowire Growth of Topological Crystalline Insulator Pb 1 − x Sn x Te by Schellingerhout, Sander G., Bergamaschini, Roberto, Verheijen, Marcel A., Montalenti, Francesco, Miglio, Leo, Bakkers, Erik P.A.M.

“…Abstract Predicted topological crystalline insulators such as Pb 1 − x Sn x Te are an interesting candidate for applications in quantum technology, as they can…”
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Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling by Albani, Marco, Bergamaschini, Roberto, Salvalaglio, Marco, Voigt, Axel, Miglio, Leo, Montalenti, Francesco

“…The faceting of a growing crystal is theoretically investigated by a continuum model including the incorporation kinetics of adatoms. This allows us for…”
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In‐Plane Nanowire Growth of Topological Crystalline Insulator Pb1 − xSnxTe by Schellingerhout, Sander G., Bergamaschini, Roberto, Verheijen, Marcel A., Montalenti, Francesco, Miglio, Leo, Bakkers, Erik P.A.M.

“…Predicted topological crystalline insulators such as Pb1 − xSnxTe are an interesting candidate for applications in quantum technology, as they can host…”
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Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film by Salvalaglio, Marco, Bergamaschini, Roberto, Backofen, Rainer, Voigt, Axel, Montalenti, Francesco, Miglio, Leo

“…[Display omitted] •A versatile phase-field model of surface diffusion is used to simulate the evolution of 3D_ geometries.•The anisotropic surface energy of Ge…”
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Motion of crystalline inclusions by interface diffusion in the proximity of free surfaces by Bergamaschini, Roberto, Rosen, Brian A., Montalenti, Francesco, Colin, Jérôme

“…Triggered by experimental observations of nanometer-sized Ni precipitate motion in a La 2 O 3 matrix, the migration and morphological evolution by interface…”
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Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires by Assali, Simone, Bergamaschini, Roberto, Scalise, Emilio, Verheijen, Marcel A, Albani, Marco, Dijkstra, Alain, Li, Ang, Koelling, Sebastian, Bakkers, Erik P. A. M, Montalenti, Francesco, Miglio, Leo

“…The growth of Sn-rich group-IV semiconductors at the nanoscale can enrich the understanding of the fundamental properties of metastable GeSn alloys. Here, we…”
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The interplay of morphological and compositional evolution in crystal growth: a phase-field model by Backofen, Rainer, Bergamaschini, Roberto, Voigt, Axel

“…We present a closed and consistent model for growth phenomena of binary systems. Starting with the free energy of mixtures, a mean-field description of the…”
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