Search Results - "Berezovska, N I"

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  1. 1

    Interface texturing for enhanced PEDOT:PSS/si solar cell efficiency by Mamykin, S. V., Lunko, T. S., Mamontova, I. B., Kondratenko, O. S., Berezovska, N. I., Romanyuk, V. R.

    Published in Molecular Crystals and Liquid Crystals (02-05-2024)
    “…Solar cell heterostructures based on PEDOT:PSS/Si heterojunction with a flat and microrelief interfaces of pyramidal and inverted pyramids type, unmodified and…”
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    Journal Article
  2. 2

    Fullerene C60-silver nanoparticles hybrid structures: optical and photoelectric characterization by Dmitruk, N L, Borkovskaya, O Y, Mamykin, S V, Naumenko, D O, Berezovska, N I, Dmitruk, I M, Meza-Laguna, V, Alvarez-Zauco, E, Basiuk, E V

    Published in Journal of nanoscience and nanotechnology (01-11-2008)
    “…A detailed optical and photoelectric characterization of pristine fullerene C60 films deposited onto n-silicon substrates (C60/Si), C60 films crosslinked by…”
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    Journal Article
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    The influence of ultrafast laser processing on morphology and optical properties of Au-GaAs composite structure by Dmytruk, I.M., Berezovska, N.I., Hrabovskyi, Ye.S., Pundyk, I.P., Mamykin, S.V., Romanyuk, V.R., Dmytruk, A.M.

    “…The results of direct femtosecond laser structuring of GaAs wafer coated with continuous semitransparent gold (Au) film are presented. The obtained structures…”
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    Journal Article
  5. 5

    Self-organized Au-GaAs metal-semiconductor micro- and nanostructures for applications in plasmonic photovoltaics by Dmitruk, I. M., Berezovska, Nataliya, Maiko, K. O., Mamykin, S. V., Mamontova, I. B.

    “…Au-GaAs metal-semiconductor composite microstructures have been prepared by an anisotropic etching of n-GaAs (100) wafers doped with Te (1016 to 1017 cm-3)…”
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    Journal Article
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    Characterization of porous silicon carbide according to absorption and photoluminescence spectra by Berezovska, N. I., Bacherikov, Yu. Yu, Konakova, R. V., Okhrimenko, O. B., Lytvyn, O. S., Linets, L. G., Svetlichnyi, A. M.

    Published in Semiconductors (Woodbury, N.Y.) (01-08-2014)
    “…The results of the atomic-force microscopy, optical-absorption spectroscopy, and photoluminescence spectroscopy of porous silicon carbide ( por -SiC) produced…”
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    Journal Article
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