Search Results - "Berencen, Y."

Optical Properties of Selenium-Hyperdoped Si Layers: Effects of Laser and Thermal Treatment by Komarov, F. F., Vlasukova, L. A., Milchanin, O. V., Parkhomenko, I. N., Berencen, Y., Alzhanova, A. E., Wang, Ting, Zuk, J.

“…Silicon layers with a selenium impurity concentration up to 10 21 cm –3 , which exceeds the equilibrium solubility limit of this impurity in silicon by four…”
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Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors by FernAndez-SAnchez, C, HernAndez, S, Berencen, Y

“…The sol-gel synthesis of bulk silica-based luminescent materials using innocuous hexaethoxydisilane and hexamethoxydisilane monomers, followed by one hour…”
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Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface by Breev, I. D., Shang, Z., Poshakinskiy, A. V., Singh, H., Berencén, Y., Hollenbach, M., Nagalyuk, S. S., Mokhov, E. N., Babunts, R. A., Baranov, P. G., Suter, D., Tarasenko, S. A., Astakhov, G. V., Anisimov, A. N.

“…Controllable solid-state spin qubits are currently becoming useful building blocks for applied quantum technologies. Here, we demonstrate that in a specific…”
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Carrier transport and electroluminescence efficiency of erbium-doped silicon nanocrystal superlattices by Ramírez, J. M., Berencén, Y., López-Conesa, L., Rebled, J. M., Peiró, F., Garrido, B.

“…A detailed study of transport phenomena and electroluminescence of erbium-doped silicon-rich oxide/silicon oxide superlattices is presented. Extended states…”
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Structural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing by Liu, Fang, Prucnal, S., Yuan, Ye, Heller, R., Berencén, Y., Böttger, R., Rebohle, L., Skorupa, W., Helm, M., Zhou, S.

“…We report on the hyperdoping of silicon with selenium obtained by ion implantation followed by flash lamp annealing. It is shown that the degree of crystalline…”
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Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices by Berencén, Y., Mundet, B., Rodríguez, J.A., Montserrat, J., Domínguez, C., Garrido, B.

“…The combination of a SiO2 electron accelerator layer with a silicon-rich nitride layer forming a bilayer embedded in a metal-oxide-semiconductor structure has…”
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Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices by Berencén, Y., Wutzler, R., Rebohle, L., Hiller, D., Ramírez, J. M., Rodríguez, J. A., Skorupa, W., Garrido, B.

“…High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich…”
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Charge trapping and physical parameters of Er3+ doped light-emitting field-effect transistors by Ramírez, J. M., Berencén, Y., Garrido, B.

“…The electrical properties of light‐emitting field‐effect transistors with Er3+ doped gate oxides formed either by a Si‐rich oxide or by a SiO2 are studied…”
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Far-field characterization of the thermal dynamics in lasing microspheres by Ramírez, J. M., Navarro-Urrios, D., Capuj, N. E., Berencén, Y., Pitanti, A., Garrido, B., Tredicucci, A.

“…This work reports the dynamical thermal behavior of lasing microspheres placed on a dielectric substrate while they are homogeneously heated-up by the top-pump…”
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Metal-nitride-oxide-semiconductor light-emitting devices for general lighting by Berencén, Y, Carreras, Josep, Jambois, O, Ramírez, J M, Rodríguez, J A, Domínguez, C, Hunt, Charles E, Garrido, B

“…The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in…”
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Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization by Caudevilla, D., Berencen, Y., Algaidy, S., Zenteno, F., Olea, J., Andres, E. San, Garcia-Hernansanz, R., Del Prado, A., Pastor, D., Garcia-Hemme, E.

“…Germanium hyperdoped with deep level donors, such as tellurium, would lead to dopant-mediated sub-band gap mid-infrared photoresponse at room temperature. We…”
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Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides by Ramírez, J M, Berencén, Y, Ferrarese Lupi, F, Navarro-Urrios, D, Anopchenko, A, Tengattini, A, Prtljaga, N, Pavesi, L, Rivallin, P, Fedeli, J M, Garrido, B

“…Electrically driven Er(3+) doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er(3+) doped active layers were fabricated in the slot…”
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Polarization strategies to improve the emission of Si-based light sources emitting at 1.55μm by Ramírez, J.M., Jambois, O., Berencén, Y., Navarro-Urrios, D., Anopchenko, A., Marconi, A., Prtljaga, N., Daldosso, N., Pavesi, L., Colonna, J.-P., Fedeli, J.-M., Garrido, B.

“…► We study the electroluminescence of LPCVD SiOx layers doped or not with Er ions. ► Direct current and pulsed voltage polarization have been used to compare…”
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Copropagating pump and probe experiments on Si-nc in SiO2 rib waveguides doped with Er: The optical role of non-emitting ions by Navarro-Urrios, D., Ferrarese Lupi, F., Prtljaga, N., Pitanti, A., Jambois, O., Ramírez, J. M., Berencén, Y., Daldosso, N., Garrido, B., Pavesi, L.

“…We present a study that demonstrates the limits for achieving net optical gain in an optimized waveguide where Si nanoclusters in SiO2 codoped with Er3+ are…”
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Charge trapping and physical parameters of Er super(3+) doped light-emitting field-effect transistors by Ramirez, J M, Berencen, Y, Garrido, B

“…The electrical properties of light-emitting field-effect transistors with Er super(3+) doped gate oxides formed either by a Si-rich oxide or by a SiO sub(2)…”
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Er-doped Si-based electroluminescent capacitors: Role of different host matrices on the electrical and luminescence properties by Berencen, Y., Ramirez, J. M., Garrido, B.

“…We report on the electrical and electroluminescence properties of four different layers based on Er-doped silicon oxide (or nitride) with (or without) silicon…”
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Toward a 1.54 $\mu$m Electrically Driven Erbium-Doped Silicon Slot Waveguide and Optical Amplifier by Tengattini, A., Gandolfi, D., Prtljaga, N., Anopchenko, A., Ramirez, J. M., Lupi, F. Ferrarese, Berencen, Y., Navarro-Urrios, D., Rivallin, P., Surana, K., Garrido, B., Fedeli, J.-M., Pavesi, L.

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Toward a 1.54 \mum Electrically Driven Erbium-Doped Silicon Slot Waveguide and Optical Amplifier by Tengattini, A., Gandolfi, D., Prtljaga, N., Anopchenko, A., Ramirez, J. M., Lupi, F. F., Berencen, Y., Navarro-Urrios, D., Rivallin, P., Surana, K., Garrido, B., Fedeli, J., Pavesi, L.

“…In this paper, we report on the first attempt to design, fabricate, and test an on-chip optical amplifier which works at 1540 nm and can be electrically…”
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Charge trapping and physical parameters of Er 3+ doped light‐emitting field‐effect transistors by Ramírez, J. M., Berencén, Y., Garrido, B.

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Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical and optical properties by Wang, Mao, Hubner, R, Xie, Chi Xu Yufang, Berencen, Y, Heller, R, Rebohle, L, Helm, M, Prucnal, S, Zhou, Shengqiang

“…Phys. Rev. Materials 3, 044606 (2019) Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal…”
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