Search Results - "Berbezier, I."

Growth and self-organization of SiGe nanostructures by Aqua, J.-N., Berbezier, I., Favre, L., Frisch, T., Ronda, A.

“…Many recent advances in microelectronics would not have been possible without the development of strain induced nanodevices and bandgap engineering, in…”
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SiGe nanostructures by Berbezier, I., Ronda, A.

“…Since the first studies in the late 1970s most of the researches on Si1-xGe(x) nanostructures have been motivated by their potential applications in micro,…”
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Fabrication of MIS photodetector with Ge nanocrystals grown by MBE by Aouassa, M., M’gaieth, R., Azeza, B., Berbezier, I., Favre, L.

“…In this paper, it is shown for the first time that Ge nanocrystals (Ge NCs) obtained via solid-state dewetting of amorphous GOI can be used as the active…”
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Fabrication of spectrally sharp Si-based dielectric resonators: combining etaloning with Mie resonances by Toliopoulos, D, Khoury, M, Bouabdellaoui, M, Granchi, N, Claude, J-B, Benali, A, Berbezier, I, Hannani, D, Ronda, A, Wenger, J, Bollani, M, Gurioli, M, Sanguinetti, S, Intonti, F, Abbarchi, M

“…We use low-resolution optical lithography joined with solid state dewetting of crystalline, ultra-thin silicon on insulator (c-UT-SOI) to form monocrystalline,…”
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Geometrically induced electron-electron interaction in semiconductor nanowires by Pinto, N., Rezvani, S. J., Favre, L., Berbezier, I., Fretto, M., Boarino, L.

“…We report the observation of a structurally induced doping compensation mechanism in doped semiconductor nanowires that results from the reduced size geometry…”
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The kinetics of dewetting ultra-thin Si layers from silicon dioxide by Aouassa, M, Favre, L, Ronda, A, Maaref, H, Berbezier, I

“…In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures…”
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High graphene permeability for room temperature silicon deposition: The role of defects by Ronci, F., Colonna, S., Flammini, R., De Crescenzi, M., Scarselli, M., Salvato, M., Berbezier, I., Jardali, F., Lechner, C., Pochet, P., Vach, H., Castrucci, P.

“…Graphene (Gr) is known to be an excellent barrier preventing atoms and molecules to diffuse through it. This is due to the carbon atom arrangement in a…”
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Charge trapping properties of Ge nanocrystals grown via solid-state dewetting by Jadli, I., Aouassa, M., Johnston, S., Maaref, H., Favre, L., Ronda, A., Berbezier, I., M'ghaieth, R.

“…In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising…”
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Role of surface passivation on visible and infrared emission of Ge quantum dots formed by dewetting by Aouassa, M, Zrir, M A, Jadli, I, Hassayoun, L S, Mghaieth, R, Maaref, H, Favre, L, Ronda, A, Berbezier, I

“…The dual action of oxide-related defects in the visible and infrared emission of germanium (Ge) self-assembled quantum dots (QDs) is discussed. The Ge…”
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Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxy by Gouder, S., Mahamdi, R., Aouassa, M., Escoubas, S., Favre, L., Ronda, A., Berbezier, I.

“…Thick porous silicon (PS) buffer layers are used as sacrificial layers to epitaxially grow planar and fully relaxed Ge membranes. The single crystal Ge layers…”
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Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer by Aouassa, M., Escoubas, S., Ronda, A., Favre, L., Gouder, S., Mahamdi, R., Arbaoui, E., Halimaoui, A., Berbezier, I.

“…Porous silicon (PSi) layers are used as templates to grow epitaxial planar and fully relaxed Ge pseudo-substrates. An annealing at 600 °C, dramatically changes…”
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Ultimate nanopatterning of Si substrate using filtered liquid metal alloy ion source-focused ion beam by Benkouider, A., Berbezier, I., Ronda, A., Favre, L., Gomes, E. Ruiz, Marcus, I.C., Alonso, I., Delobbe, A., Sudraud, P.

“…In this work we study the influence of the major focused ion beam operating parameters: ion chemical species, beam current, lens voltage and ion dose on the…”
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Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111) by Lockwood, D J, Rowell, N L, Benkouider, A, Ronda, A, Favre, L, Berbezier, I

“…We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production…”
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Sb-surfactant-mediated growth of Si and Ge nanostructures by Portavoce, A., Berbezier, I., Ronda, A.

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Ordering of Ge nanocrystals using FIB nanolithography by Karmous, A., Berbezier, I., Ronda, A., Hull, R., Graham, J.

“…Formation and ordering of Ge nanocrystals (NC) are studied on Si(0 0 1) and SiO 2/Si(0 0 1) substrates patterned by focused ion beam (FIB). In both cases we…”
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Mn5Ge3 films grown on Ge(111)-c(2 × 8) by DE PADOVA, P, MARIOT, J.-M, BERTRAN, F, HECKMANN, O, RICHTER, M. C, NDIAYE, W, D'ORAZIO, F, LUCARI, F, CACHO, C. M, HRICOVINI, K, FAVRE, L, BERBEZIER, I, OLIVIERI, B, PERFETTI, P, QUARESIMA, C, OTTAVIANI, C, TALEB-IBRAHIMI, A, LE FEVRE, P

“…An investigation of the structural, magnetic and electronic properties of ≈ 3 nm thick Mn5Ge3 films epitaxially grown on a Ge(1 1 1)-c(2 × 8) reconstructed…”
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Self-patterned Si surfaces as templates for Ge islands ordering by Ronda, A, Berbezier, I

“…We propose a two-step process, which is based on substrate nano-patterning by means of growth instabilities in a first step and self-assembling of Ge dots on…”
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Vapor–solid–solid growth of Ge nanowires from GeMn solid cluster seeds by Berbezier, I., Ayoub, J.P., Favre, L., Ronda, A., Morresi, L., Pinto, N.

“…We describe the fabrication of Ge nanowires during a single co-deposition step of Ge and Mn at high temperature. In these experimental conditions, a phase…”
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Growth of ultrahigh-density quantum-confined germanium dots on SiO2 thin films by Berbezier, I., Karmous, A., Ronda, A., Sgarlata, A., Balzarotti, A., Castrucci, P., Scarselli, M., De Crescenzi, M.

“…The spontaneous formation of nanometric and highly dense (∼3×1012cm−2) Ge droplets on thin SiO2 film on Si(001) is investigated by scanning tunneling…”
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Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities by Berbezier, I., Ronda, A., Portavoce, A., Motta, N.

“…The ordering of islands on naturally or artificially nanostructured surfaces is one of the most recent objectives among actual nanotechnology challenges. We…”
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