Search Results - "Bera, L."

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices by Singh, N., Agarwal, A., Bera, L.K., Liow, T.Y., Yang, R., Rustagi, S.C., Tung, C.H., Kumar, R., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.

“…This paper demonstrates gate-all-around (GAA) n- and p-FETs on a silicon-on-insulator with /spl les/ 5-nm-diameter laterally formed Si nanowire channel…”
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AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) by Tripathy, S., Lin, Vivian K. X., Dolmanan, S. B., Tan, Joyce P. Y., Kajen, R. S., Bera, L. K., Teo, S. L., Kumar, M. Krishna, Arulkumaran, S., Ng, G. I., Vicknesh, S., Todd, Shane, Wang, W. Z., Lo, G. Q., Li, H., Lee, D., Han, S.

“…This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111)…”
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Electrochemical Characterization of Bronze Exposed to Outdoor Atmosphere by Otmačić Ćurković, Helena, Mikić, Dajana, Bera, Luka, Kovačević, Ema, Marcelja, Marijana

“…The aim of this work was to examine corrosion behaviour of bare and artificial patinated bronzes during exposure to urban outdoor atmosphere. Studies were…”
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Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors by Fang, W.W., Singh, N., Bera, L.K., Nguyen, H.S., Rustagi, S.C., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.

“…We demonstrate, for the first time, the fabrication of vertically stacked SiGe nanowire (NW) arrays with a fully CMOS compatible technique. Our method uses the…”
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Probing channel temperature profiles in AlxGa1−xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy by Bera, L K, Liu, Y, Bera, M K, Singh, S P, Dolmanan, S B, Tan, H R, Bhat, T N, Chor, E F, Tripathy, S

“…Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in AlxGa1-xN/GaN high electron mobility transistors (HEMTs)…”
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CORRELATIONS BETWEEN THE PRESENCE OF HÜRTHLE CELLS AND CYTOMORPHOLOGICAL FEATURES OF FINE-NEEDLE ASPIRATION BIOPSY IN THYROID NODULES by Stanciu, M, Zaharie, I S, Bera, L G, Cioca, G

“…The presence of Hürthle cells (HC) in fine needle thyroid biopsy (FNAB) is a real concern for a cytologist and also for an endocrinologist. We aimed to…”
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Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation by Qingchun Zhang, Jidong Huang, Nan Wu, Guoxin Chen, Minghui Hong, Bera, L.K., Chunxiang Zhu

“…A gate-first self-aligned Ge nMOSFET with a metal gate and CVD HfO 2 has been successfully fabricated using KrF laser annealing (LA) as dopant-activation…”
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Tungsten nanocrystals embedded in high- k materials for memory application by Samanta, S. K., Yoo, Won Jong, Samudra, Ganesh, Tok, Eng Soon, Bera, L. K., Balasubramanian, N.

“…The formation of tungsten nanocrystals (W-NCs) on atomic-layer-deposited HfAlO ∕ Al 2 O 3 tunnel oxide was demonstrated for application in a memory device. It…”
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489 Interleukin Phenotype in Patients with Pfapa by Iurian, SI, Dobrota, L, Iurian, S, Neamtu, ML, Bera, L, Rosenberg, A

“…Background PFAPA is a chronic condition including recurrent fever episodes, aphthous stomatitis, pharyngitis, adenitis. According to a previous study, even…”
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1737 Epidemiological Aspects of Streptococcal Pharyngeal Infections in Pediatric Population by Iurian, S, Bera, L, Iurian, SI, Mihut, M, Neamtu, ML, Muntean, A

“…Background During last 5 years, we noticed an increasing incidence of scarlet fever and streptococcal pharyngitis in our county. Aims To appreciate the…”
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Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body by Lim, Y.F., Xiong, Y.Z., Singh, N., Yang, R., Jiang, Y., Chan, D.S.H., Loh, W.Y., Bera, L.K., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.

“…For the first time, the random telegraph signal (RTS) and its corresponding flicker noise (1/f) were investigated in gate-all-around p-type Si-FinFETs. For a…”
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ORBITAL PSEUDOTUMOR CAN MIMIC GRAVES' OPHTHALMOPATHY by Stanciu, M, Popa, F L, Totoian, I G, Bera, L G

“…Orbital pseudotumor (OP) is a benign inflammatory process of the orbit with a large polymorphous lymphoid infiltrate, associated with fibrosis in variable…”
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Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications by Bai, W.P., Bae, S.H., Wen, H.C., Mathew, S., Bera, L.K., Balasubramanian, N., Yamada, N., Li, M.F., Kwong, D.-L.

“…This letter presents a novel technique for tuning the work function of a metal gate electrode. Laminated metal gate electrodes consisting of three ultrathin…”
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Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process by Moon Sig Joo, Byung Jin Cho, Chia Ching Yeo, Siu Hung Chan, D., Sung Jin Whoang, Mathew, S., Kanta Bera, L., Balasubramanian, N., Dim-Lee Kwong

“…We demonstrate that a high quality metal organic chemical vapor deposition (MOCVD) HfAl/sub x/O/sub y/ (hereafter HfAlO) dielectric film can successfully be…”
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Variation in the ATP-binding cassette transporter 2 gene is a separate risk factor for systemic lupus erythematosus within the MHC by Ramos, P S, Langefeld, C D, Bera, L A, Gaffney, P M, Noble, J A, Moser, K L

“…The ATP-binding cassette transporter (TAP) proteins are functionally relevant candidates for predisposition to systemic lupus erythematosus (SLE) by virtue of…”
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A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator by Bera, L.K., Mukherjee-Roy, M., Abidha, B., Agarwal, A., Loh, W.Y., Tung, C.H., Kumar, R., Trigg, A.D., Foo, Y.L., Tripathy, S., Lo, G.Q., Balasubramanian, N., Kwong, D.L.

“…This letter reports on an integration of dual-strained surface-channel CMOS structure, i.e., tensile-strained Si n-MOSFET and compressive strained-SiGe…”
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The impact of uniform strain applied via bonding onto plastic substrate on MOSFET performance by Bera, L.K., Loh, W.Y., Guo, L.H., Zhang, X.W., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.

“…For the first time, this letter presents a novel post-backend strain applying technique and the study of its impact on MOSFET device performance. By bonding…”
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Bendability of single-crystal Si MOSFETs investigated on flexible substrate by Li, H.Y., Guo, L.H., Loh, W.Y., Bera, L.K., Zhang, Q.X., Hwang, N., Liao, E.B., Teoh, K.W., Chua, H.M., Shen, Z.X., Cheng, C.K., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.

“…This letter reports on a device layer transfer (based on thermal bonding and grinding backside Si) process and device characteristics of Si MOSFETs on a…”
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Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient by Bera, L.K., Mathew, Shajan, Balasubramanian, N., Braithwaite, G., Currie, M.T., Singaporewala, F., Yap, J., Hammond, R., Lochtefeld, A., Bulsara, M.T., Fitzgerald, E.A.

“…Carrier generation lifetime ( τ g) in strained-Si/SiGe has been investigated using capacitance transient method in MOS structure. Interface properties of…”
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Improving glycaemic control of patients with Type 2 diabetes in a primary care setting: a French application of the Staged Diabetes Management programme by Varroud-Vial, M., Simon, D., Attali, J., Durand-Zaleski, I., Bera, L., Attali, C., Letondeur, C., Strauss, K., Petit, C., Charpentier, G.

“…Aims  To assess the impact of a French adaptation of the Staged Diabetes Management (SDM) programme on glycaemic control of people with Type 2 diabetes in…”
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