Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO3 and Pt(111)/TiO2/SiO2/(001)Si substrates by RF magnetron sputtering, using a La2Ti2O7 homemade target sputtered under oxygen reactive plasma. The films deposited at 800°C display a crystalline growth different t...

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Bibliographic Details
Published in:	Thin solid films Vol. 553; pp. 76 - 80
Main Authors:	Le Paven, C., Lu, Y., Nguyen, H.V., Benzerga, R., Le Gendre, L., Rioual, S., Benzegoutta, D., Tessier, F., Cheviré, F., Sharaiha, A., Delaveaud, C., Castel, X.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 28-02-2014 Elsevier
Subjects:	Chemical Sciences Cross-disciplinary physics: materials science; rheology Deposition by sputtering Dielectric Epitaxy Exact sciences and technology High frequency Lanthanum titanium oxide Materials science Methods of deposition of films and coatings; film growth and epitaxy Perovskite Physics Reactive sputtering Theory and models of film growth Thin films Thin films Perovskite Epitaxy Lanthanum titanium oxide Reactive sputtering Dielectric High frequency Frequency dependence Space groups Lanthanum oxide Cathode sputtering Physical vapor deposition Titanium Permittivity Radiofrequency sputtering Crystal structure Monoclinic lattices Ferroelectric materials Experimental design Electric field effects Lanthanum aluminate Growth mechanism Orthorhombic lattices Titanium compounds Sputter deposition Titanium oxide X-ray photoelectron spectra
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Summary:	Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO3 and Pt(111)/TiO2/SiO2/(001)Si substrates by RF magnetron sputtering, using a La2Ti2O7 homemade target sputtered under oxygen reactive plasma. The films deposited at 800°C display a crystalline growth different than those reported on monoclinic ferroelectric La2Ti2O7 films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti4+ ions, with no trace of Ti3+, and provides a La/Ti ratio of 1.02. The depositions being performed from a La2Ti2O7 target under oxygen rich plasma, the same composition (La2Ti2O7) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc21 space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO3 substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20]GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La2Ti2O7 orthorhombic phase. At 10GHz and room temperature, the dielectric constant of the obtained La2Ti2O7 films is ε~60 and the losses are low (tanδ<0.02). •Lanthanum titanium oxide films were deposited by reactive magnetron sputtering.•A La2Ti2O7 chemical composition is proposed, with an unusual orthorhombic cell.•At 10GHz, the dielectric losses are lower than 0.02.•No variation of the dielectric constant is observed under DC electric biasing.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2013.11.124