Search Results - "Benzarti, Z"

Improving the optical, electrical and dielectric characteristics of ZnO nanoparticles through (Fe + Al) addition for optoelectronic applications by Saadi, H., Benzarti, Z., Sanguino, P., Hadouch, Y., Mezzane, D., Khirouni, K., Abdelmoula, N., Khemakhem, H.

“…In the present study, undoped ZnO and co-doped Zn (0.99 −  x ) Fe 0.01 Al x O ( x  = 0.01, 0.03 and 0.05) were effectively prepared by the co-precipitation…”
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Enhancing the electrical and dielectric properties of ZnO nanoparticles through Fe doping for electric storage applications by Saadi, H., Benzarti, Z., Rhouma, F. I. H., Sanguino, P., Guermazi, S., Khirouni, K., Vieira, M. T.

“…The present paper provides significant results about the impact of iron doping on the ZnO nanoparticles’ structural and electrical properties. Fe-doped ZnO…”
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Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers by Benzarti, Z., Sekrafi, T., Khalfallah, A., Bougrioua, Z., Vignaud, D., Evaristo, M., Cavaleiro, A.

“…•N-polar InN epilayers grown by PA-MBE on GaN/AlN/Al2O3(0001).•Growth temperature effect on physical and mechanical features was analysed.•Optimal growth…”
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Electrical conductivity improvement of (Fe + Al) co-doped ZnO nanoparticles for optoelectronic applications by Saadi, H., Benzarti, Z., Mourad, S., Sanguino, P., Hadouch, Y., Mezzane, D., Abdelmoula, N., Khemakhem, H.

“…In the present study, undoped ZnO, doped Zn 0.99 Fe 0.01 O and co-doped Zn (0.99− x ) Fe 0.01 Al x O nanoparticles were prepared by the co-precipitation…”
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Study of Surface and Interface Roughness of GaN-Based Films Using Spectral Reflectance Measurements by Benzarti, Z., Khelifi, M., Halidou, I., El Jani, B.

“…GaN films were grown using SiN treatment of sapphire substrate by metalorganic vapor-phase epitaxy in a home-made vertical reactor at atmospheric pressure. The…”
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Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE by Bouzidi, M., Benzarti, Z., Halidou, I., Soltani, S., Chine, Z., EL Jani, B.

“…This work reports on the photoreflectance (PR) study of Si doped GaN layers (GaN:Si) with different doping levels (2.1×1017–2.8×1019cm−3). GaN:Si samples have…”
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Is the systematic circumferential tumor cavity shaving a representative sample for the remaining mammary gland? About 75 cases by Bouzaiene, H, Triki, A, Ghalleb, M, Chemlali, M, Benzarti, Z, Ben Hassouna, J, Gammoudi, A, Rahal, K

“…Abstract Introduction The conservative surgery is more and more indicated for breast cancer. However, we still fear local recurrence which is mostly due to…”
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Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric-pressure MOVPE by Touré, A., Halidou, I., Benzarti, Z., Fouzri, A., Bchetnia, A., El Jani, B.

“…AlxGa1−xN epitaxial films grown on GaN/sapphire by atmospheric‐pressure metalorganic vapor phase epitaxy (AP‐MOVPE) using trimethylgallium (TMG) and…”
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Magnesium diffusion profile in GaN grown by MOVPE by Benzarti, Z., Halidou, I., Bougrioua, Z., Boufaden, T., El Jani, B.

“…The diffusion of magnesium has been studied in GaN layers grown on sapphire substrate by atmospheric pressure metalorganic vapor-phase-epitaxy (MOVPE) in a…”
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Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire by Bchetnia, A., Touré, A., Lafford, T.A., Benzarti, Z., Halidou, I., Habchi, M.M., El Jani, B.

“…GaN films were grown by metalorganic chemical vapor deposition (MOCVD) on silicon nitride (SiN)-treated c-plane sapphire substrate. Using in situ laser…”
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Effect of SiN treatment on GaN epilayer quality by Benzarti, Z., Halidou, I., Boufaden, T., El Jani, B., Juillaguet, S., Ramonda, M.

“…High‐temperature GaN films were grown at 1120 °C and 1080 °C by atmospheric pressure metalorganic vapor phase epitaxy on silicon nitride (SiN)‐treated sapphire…”
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Laser-reflectometry monitoring of the GaN growth by MOVPE using SiN treatment: study and simulation by Fitouri, H., Benzarti, Z., Halidou, I., Boufaden, T., Jani, B. El

“…The SiN treatment of the sapphire substrate for GaN growth induces a spectacular effect on the in situ reflectometry monitoring signal. Different growth modes…”
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Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment by Halidou, I, Benzarti, Z, Boufaden, T, El Jani, B, Juillaguet, S, Ramonda, M

“…In this paper, the influence of silane flow on metalorganic vapour phase epitaxy (MOVPE) grown GaN on sapphire substrate by an in situ SiN treatment has been…”
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Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin films by Benzarti, Z., Khalfallah, A., Bougrioua, Z., Evaristo, M., Cavaleiro, A.

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Electrical conductivity improvement of Fe doped ZnO nanopowders by Saadi, H., Rhouma, F.I.H., Benzarti, Z., Bougrioua, Z., Guermazi, S., Khirouni, K.

“…[Display omitted] •Fe doped ZnO nanopowders with different doping concentrations were synthesized by the chemical co-precipitation method.•XRD study revealed…”
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Mosaicity and stress effects on luminescence properties of GaN by Toure, A., Bchetnia, A., Lafford, T. A., Benzarti, Z., Halidou, I., Bougrioua, Z., Jani, B. El

“…High‐resolution X‐ray diffraction (HRXRD) of several GaN layers grown on Si/N treated c ‐plane sapphire substrate by metal‐organic chemical vapour phase…”
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Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment by Fitouri, H., Benzarti, Z., Halidou, I., Boufaden, T., Jani, B. El

“…We present the simulation of laser reflectance measurements performed during GaN growth by metalorganic vapor phase epitaxy (MOVPE). We used the scattering…”
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Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin films by Benzarti, Z., Khalfallah, A., Bougrioua, Z., Evaristo, M., Cavaleiro, A.

“…This study investigates the impact of Mg doping concentration in GaN thin films on their physical and mechanical properties, specifically on their conductivity…”
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Investigation of magnetic, dielectric and optical properties of BiFe0.5Mn0.5O3 multiferroic ceramic by Gadhoumi, F., Kallel, I., Benzarti, Z., Abdelmoula, N., Hamedoun, M., Elmoussaoui, H., Mezzane, D., Khemakhem, H.

“…[Display omitted] •Synthesis of BiFe0.5Mn0.5O3 multiferroic ceramic using conventional solid state method. Enhanced multi-functional properties are…”
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Thickness-dependent physical and nanomechanical properties of AlxGa1−xN thin films by Boughrara, N., Benzarti, Z., Khalfallah, A., Oliveira, J.C., Evaristo, M., Cavaleiro, A.

“…A set of undoped AlxGa1−xN epilayers with different thicknesses were grown on (0001) sapphire substrates using metal-organic chemical vapor deposition (MOCVD)…”
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