Search Results - "Benyoucef, M."

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  1. 1

    Telecom-wavelength (1.5  μ m) single-photon emission from InP-based quantum dots by Benyoucef, M., Yacob, M., Reithmaier, J. P., Kettler, J., Michler, P.

    Published in Applied physics letters (14-10-2013)
    “…We demonstrate pronounced single-photon emission from InAs/AlGaInAs/InP quantum dots (QDs) at wavelengths above 1.5 μm that are compatible with standard…”
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    Journal Article
  2. 2

    InP-based single-photon sources operating at telecom C-band with increased extraction efficiency by Musiał, A., Mikulicz, M., Mrowiński, P., Zielińska, A., Sitarek, P., Wyborski, P., Kuniej, M., Reithmaier, J. P., Sęk, G., Benyoucef, M.

    Published in Applied physics letters (31-05-2021)
    “…In this work, we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values…”
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    Journal Article
  3. 3

    Analysis of dislocation networks in crept single crystal nickel-base superalloy by Boualy, O., Clément, N., Benyoucef, M.

    Published in Journal of materials science (01-02-2018)
    “…The creep behaviour at 1050 °C of oriented MC2 single crystals is analysed by means of SEM and TEM observations. The γ – γ ′ rafting process occurs rapidly and…”
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    Journal Article
  4. 4

    Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities by Kors, A., Fuchs, K., Yacob, M., Reithmaier, J. P., Benyoucef, M.

    Published in Applied physics letters (16-01-2017)
    “…Here we report on the fabrication and optical characterization of InP-based L3 photonic crystal (PhC) microcavities embedded with a medium density InAs/InP…”
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    Journal Article
  5. 5

    Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress by Ding, F, Singh, R, Plumhof, J D, Zander, T, Krápek, V, Chen, Y H, Benyoucef, M, Zwiller, V, Dörr, K, Bester, G, Rastelli, A, Schmidt, O G

    Published in Physical review letters (12-02-2010)
    “…We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators. With…”
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    Journal Article
  6. 6

    Low-density InP-based quantum dots emitting around the 1.5  μ m telecom wavelength range by Yacob, M., Reithmaier, J. P., Benyoucef, M.

    Published in Applied physics letters (13-01-2014)
    “…The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source…”
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    Journal Article
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    Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates by Atkinson, P., Kiravittaya, S., Benyoucef, M., Rastelli, A., Schmidt, O. G.

    Published in Applied physics letters (08-09-2008)
    “…Site-controlled growth of single and pairs of InAs quantum dots is demonstrated on ex situ electron-beam patterned (001) GaAs substrates using in situ…”
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    Journal Article
  9. 9

    Light emission and wave guiding of quantum dots in a tube by Mendach, S., Songmuang, R., Kiravittaya, S., Rastelli, A., Benyoucef, M., Schmidt, O. G.

    Published in Applied physics letters (13-03-2006)
    “…We present microphotoluminescence investigations of InAs quantum dots (QDs) integrated into self-rolling In Ga As ∕ Ga As strained layers. The emission signal…”
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    Journal Article
  10. 10

    On-chip Si/SiOx microtube refractometer by Bernardi, A., Kiravittaya, S., Rastelli, A., Songmuang, R., Thurmer, D. J., Benyoucef, M., Schmidt, O. G.

    Published in Applied physics letters (01-09-2008)
    “…The authors fabricate rolled up microtubes consisting of Si/SiOx on Si substrate and analyze the possibility to use them as a refractometric sensor. An aqueous…”
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    Journal Article
  11. 11

    Late Cretaceous (Cenomanian-Turonian) ammonites from southern Morocco and south western Algeria by Meister, Christian, Piuz, André, Cavin, Lionel, Boudad, Larbi, Bacchia, Flavio, Ettachfini, El M., Benyoucef, M.

    Published in Arabian journal of geosciences (2017)
    “…On the basis of nine lithostratigraphical profiles, 23 cephalopods taxa (nautilus and ammonites) are described from the Preafrican Trough and the Kem Kem…”
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    Journal Article
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    Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom band at 1.5 mu m by Gordon, S, Yacob, M, Reithmaier, J P, Benyoucef, M, Zrenner, A

    Published in Applied physics. B, Lasers and optics (01-02-2016)
    “…In this work we study the resonant and coherent properties of single InP-based InAs quantum dots, which show an optical emission in the telecom C-band and…”
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    Journal Article
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    Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon by Benyoucef, M., Alzoubi, T., Reithmaier, J. P., Wu, M., Trampert, A.

    “…InAs quantum dots were directly grown on (100) planar silicon surfaces and embedded in a defect‐free silicon matrix after a multi‐step silicon overgrowth and…”
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    Journal Article
  16. 16

    Optical properties of rolled-up tubular microcavities from shaped nanomembranes by Huang, G. S., Kiravittaya, S., Bolaños Quiñones, V. A., Ding, F., Benyoucef, M., Rastelli, A., Mei, Y. F., Schmidt, O. G.

    Published in Applied physics letters (06-04-2009)
    “…Tubular optical microcavities have been fabricated by releasing prestressed SiO / SiO 2 bilayer nanomembranes from polymer sacrificial layers, and their…”
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    Journal Article
  17. 17

    Pre-patterned silicon substrates for the growth of III-V nanostructures by Benyoucef, M., Usman, M., Alzoubi, T., Reithmaier, J. P.

    “…This paper reviews the recent progresses obtained by direct growth of III–V semiconductor quantum dots (QDs) on pre‐patterned and flat silicon substrates. This…”
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    Journal Article
  18. 18

    Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization by Alzoubi, T., Usman, M., Benyoucef, M., Reithmaier, J.P.

    Published in Journal of crystal growth (15-05-2011)
    “…Self assembled InAs quantum dots (QDs) are grown by solid source molecular beam epitaxy on (100) and (111) Si substrates using Stranski–Krastanov (SK) growth…”
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    Journal Article Conference Proceeding
  19. 19

    Microcavity enhanced silicon light emitting pn-diode by Potfajova, J., Schmidt, B., Helm, M., Gemming, T., Benyoucef, M., Rastelli, A., Schmidt, O. G.

    Published in Applied physics letters (12-04-2010)
    “…An electrically driven silicon light emitting diode with two distributed Bragg reflectors is reported. The active material is a Si pn-junction fabricated by…”
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    Journal Article
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    Quality-factor enhancement of optical modes mediated by strong coupling in micron-size semiconductor disks by Benyoucef, M., Shim, J.-B., Wiersig, J., Schmidt, O. G.

    “…We investigate whispering gallery modes (WGMs) in coupled microdisks both experimentally and theoretically. In order to compensate small fluctuations in the…”
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    Journal Article