Search Results - "Benkovská, J"

Investigation of deep energy levels in heterostructures based on GaN by DLTS by Stuchlíková, L, Šebok, J, Rybár, J, Petrus, M, Nemec, M, Harmatha, L, Benkovská, J, Kováč, J, Škriniarová, J, Lalinský, T, Paskiewicz, R, Tlaczala, M

“…In this paper we report our results of DLTS investigations of deep-level defects in Schottky-gate AlGaN/GaN LP-MOVPE structures grown on sapphire substrate…”
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Defects in schottky diodes based on AlGaN/GaN heterostructures by Stuchlikova, L., Kosa, A., Benkovska, J., Benko, P., Harmatha, L., Kovac, J.

“…In this paper, the investigation of four types of Schottky-gate structures prepared by low-pressure metal-organic vapour phase epitaxy on sapphire and 4H-SiC…”
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Radiation hardness of 4H-SiC structuresues by Kosa, A., Benkovska, J., Stuchlikova, L., Buc, D., Dubecky, F., Harmatha, L.

“…Deep level transient spectroscopy is utilized to investigate radiation induced defects in three types of 4H-SiC Schottky diode structures by combined neutron…”
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4H-SiC Diode with a RuOx and a RuWOx Schottky Contact Irradiated by Fast Electrons by Stuchlikova, L'., Harmatha, L., Buc, D., Benkovska, J., Hlinka, B., Siu, G. G.

“…The impact of radiation damage on the device performance of 4H-SiC Schottky diodes with a RuO 2 and a RuWO x Schottky contacts, which were irradiated at room…”
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Quo Vadis, e-learning? by Stuchlikova, L., Benkovska, J.

“…The authors show their view on e-learning in the last ten years focusing on situation in Slovakia. Presenting their own experiences, they aim to provide…”
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eLearn central - the journey to e-learning by Stuchlikova, L., Benkovska, J.

“…This article highlights the practical experiences acquired in design, realization and implementation of interactive e-learning project located on the…”
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Electrical characterization of the InAlN/GaN heterostructures by capacitance methods by Stuchlikova, L., Petrus, M., Kovac, J., Rybar, J., Harmatha, L., Donoval, D., Benkovska, J., Behmenburg, H., Heuken, M.

“…This paper highlights the electrical characterization of 4 types of the Schottky structures prepared on InAlN/GaN epi-layer designed for HEMT's with the AlN…”
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