Full wafer processing and testing the future of large scale laser fabrication

Today's fabrication techniques for semiconductor lasers differ significantly from the VLSI-type processing used in semiconductor circuit technology. This is mainly due to the use of cleaving techniques for the formation of the laser mirrors. Lasers fabricated by cleaving can not be integrated w...

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Bibliographic Details
Published in:	12th IEEE International Conference on Semiconductor Laser pp. 144 - 145
Main Authors:	Vettiger, P., Benedict, M.E., Bona, G.L., Buchmann, P., Cahoon, N., Daetwyler, K., Dietrich, H.P., Moser, A., Seitz, H.K., Voegeli, O., Webb, D.J., Wolf, P.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1990
Subjects:	Chemical lasers Etching Large-scale systems Laser feedback Laser modes Mirrors Optical device fabrication Semiconductor device testing Semiconductor diodes Semiconductor lasers
Online Access:	Get full text
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Summary:	Today's fabrication techniques for semiconductor lasers differ significantly from the VLSI-type processing used in semiconductor circuit technology. This is mainly due to the use of cleaving techniques for the formation of the laser mirrors. Lasers fabricated by cleaving can not be integrated with other optoelectronic or electronic devices on the same chip. In addition, processes like mirror coating and testing have to be done at the bar or single diode level. This results in considerable yield reduction (handling) and increased fabrication/ testing costs.
DOI:	10.1109/ISLC.1990.764464