Search Results - "Benbahouche, L."

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    New numerical power IGBT model and simulation of its electrical characteristics by Benbahouche, L., Latrech, S., Gontrand, C.

    “…The great advances in power electronic technology and the rapid development of power semiconductor devices both in power and switching frequency ranges, have…”
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    Conference Proceeding
  2. 2

    Failure Mechanisms and comparative study of ruggedness in IGBTs Devices (IR, IXYS) by Benbahouche, L., Merabet, A., Zegadi, A.

    “…This paper present a detailed study of performance of two the most commercially available IGBT for International Rectifier and IXYS e.g. IRGBC40 (S, F,U) and…”
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    Conference Proceeding