Search Results - "Benarama, M."

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  1. 1
    Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

    Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition by Shelton, B.S., Lambert, D.J.H., Jian Jang Huang, Wong, M.M., Chowdhury, U., Ting Gang Zhu, Kwon, H.K., Liliental-Weber, Z., Benarama, M., Feng, M., Dupuis, R.D.

    Published in IEEE transactions on electron devices (01-03-2001)
    “…The selective area growth (SAG) and properties of AlGaN/GaN heterojunction bipolar transistors (HBTs) grown by low-pressure metalorganic chemical vapor…”
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  2. 2
    The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

    The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition by Lambert, D.J.H, Huang, J.J, Shelton, B.S, Wong, M.M, Chowdhury, U, Zhu, T.G, Kwon, H.K, Liliental-Weber, Z, Benarama, M, Feng, M, Dupuis, R.D

    Published in Journal of crystal growth (01-12-2000)
    “…The growth and properties of AlGaN/GaN heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described…”
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    Journal Article Conference Proceeding
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  3. 3
    The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

    The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition by Lambert, D.J.H., Huang, J.J., Shelton, B.S., Wong, M.M., Chowdhury, U., Zhu, T.G., Kwon, H.K., Liliental-Weber, Z., Benarama, M., Feng, M., Dupuis, R.D.

    Published in Journal of crystal growth (15-11-2001)
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