Search Results - "Ben, Jianwei"
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Fabrication and Electrochemical Performance of PVA/CNT/PANI Flexible Films as Electrodes for Supercapacitors
Published in Nanoscale research letters (22-07-2020)“…The flexible and rechargeable energy storage device with excellent performance is highly desired due to the demands of portable and wearable devices. Herein,…”
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2D III‐Nitride Materials: Properties, Growth, and Applications
Published in Advanced materials (Weinheim) (01-07-2021)“…2D III‐nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide…”
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3
Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
Published in Light, science & applications (31-03-2021)“…Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field and energy density,…”
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4
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing
Published in Applied physics letters (22-06-2020)“…The voids will be formed in the physical vapor deposited (PVD)-AlN epilayer after high temperature annealing. In this work, the formation mechanism of voids…”
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5
Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC
Published in Small (Weinheim an der Bergstrasse, Germany) (01-06-2018)“…Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of…”
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In Situ Growth of Wafer‐Scale Patterned Graphene and Fabrication of Optoelectronic Artificial Synaptic Device Array Based on Graphene/n‐AlGaN Heterojunction for Visual Learning
Published in Small (Weinheim an der Bergstrasse, Germany) (01-08-2024)“…The unique optical and electrical properties of graphene‐based heterojunctions make them significant for artificial synaptic devices, promoting the advancement…”
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In Situ Growth of Wafer‐Scale Patterned Graphene and Fabrication of Optoelectronic Artificial Synaptic Device Array Based on Graphene/n‐AlGaN Heterojunction for Visual Learning (Small 34/2024)
Published in Small (Weinheim an der Bergstrasse, Germany) (22-08-2024)“…Graphene‐Based Heterojunctions In article number 2401150, Xiaojuan Sun, Dabing Li, and co‐workers developed an in‐situ growth strategy for the wafer‐scale…”
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Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer
Published in Applied physics letters (18-10-2021)“…GaN-based ultraviolet (UV) detectors have a considerable application potential in many fields. In this Letter, we report an alternative strategy to realize a…”
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9
Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductors
Published in Light, science & applications (29-03-2024)“…With the fast development of artificial intelligence (AI), Internet of things (IOT), etc, there is an urgent need for the technology that can efficiently…”
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10
Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes
Published in Fundamental research (Beijing) (01-11-2021)“…AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV) light-emitting diodes (LEDs) owing to their direct, wide, and…”
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11
Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation
Published in Advanced science (01-09-2021)“…Single‐photon sources based on solid‐state material are desirable in quantum technologies. However, suitable platforms for single‐photon emission are currently…”
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12
Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall
Published in IEEE journal of the Electron Devices Society (01-01-2024)“…In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch…”
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13
Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field
Published in Nanoscale research letters (30-05-2019)“…The refractive index of AlN has a direct influence on AlGaN-based deep ultraviolet optoelectronic devices, such as the external quantum efficiency of…”
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Rapid inactivation of human respiratory RNA viruses by deep ultraviolet irradiation from light-emitting diodes on a high-temperature-annealed AlN/Sapphire template
Published in Opto-Electronic Advances (01-01-2023)“…Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued in both public environment and portable usage. The AlGaN-based…”
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15
Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
Published in Nanomaterials (Basel, Switzerland) (07-12-2021)“…In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as the dielectric layers in p -Al Ga N/AlGaN/n -Al Ga N polarization…”
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16
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
Published in IEEE journal of the Electron Devices Society (2020)“…Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in…”
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17
Sodium birnessite@graphene hierarchical structures for ultrafast sodium ion storage
Published in Journal of electroanalytical chemistry (Lausanne, Switzerland) (01-02-2022)“…•The sodium birnessite@graphene hierarchical structures has been fabricated as the electrode material for sodium ion battery.•The Na+ mobility reaches…”
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Regulation of oxygen defects in AlGaN-based epilayers grown on high temperature annealed AlN template
Published in Materials letters (15-08-2024)“…•The regulation of O defects in AlGaN on the HTA-AlN template is revealed.•O defects have limited diffusion distance and concentration in the AlN…”
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Effect and Regulation Mechanism of Post-deposition Annealing on the Ferroelectric Properties of AlScN Thin Films
Published in ACS applied materials & interfaces (03-04-2024)“…Integrating ferroelectric AlScN with III–N semiconductors to enhance the performance and tunability of nitride devices requires high-quality AlScN films. This…”
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy
Published in Applied physics letters (03-08-2020)“…In the present work, improved crystal quality of GaN on a graphene-covered sapphire substrate was achieved compared to GaN grown on a bare sapphire substrate,…”
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