Search Results - "Ben, Jianwei"

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  1. 1

    Fabrication and Electrochemical Performance of PVA/CNT/PANI Flexible Films as Electrodes for Supercapacitors by Ben, Jianwei, Song, Zhiyuan, Liu, Xinke, Lü, Wei, Li, Xiaohua

    Published in Nanoscale research letters (22-07-2020)
    “…The flexible and rechargeable energy storage device with excellent performance is highly desired due to the demands of portable and wearable devices. Herein,…”
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  2. 2

    2D III‐Nitride Materials: Properties, Growth, and Applications by Ben, Jianwei, Liu, Xinke, Wang, Cong, Zhang, Yupeng, Shi, Zhiming, Jia, Yuping, Zhang, Shanli, Zhang, Han, Yu, Wenjie, Li, Dabing, Sun, Xiaojuan

    Published in Advanced materials (Weinheim) (01-07-2021)
    “…2D III‐nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide…”
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  3. 3

    Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides by Jiang, Ke, Sun, Xiaojuan, Shi, Zhiming, Zang, Hang, Ben, Jianwei, Deng, Hui-Xiong, Li, Dabing

    Published in Light, science & applications (31-03-2021)
    “…Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field and energy density,…”
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  4. 4

    The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing by Ben, Jianwei, Shi, Zhiming, Zang, Hang, Sun, Xiaojuan, Liu, Xinke, Lü, Wei, Li, Dabing

    Published in Applied physics letters (22-06-2020)
    “…The voids will be formed in the physical vapor deposited (PVD)-AlN epilayer after high temperature annealing. In this work, the formation mechanism of voids…”
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  5. 5

    Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC by Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Liu, Henan, Ben, Jianwei, Li, Dabing

    “…Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of…”
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  8. 8

    Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer by Jiang, Ke, Sun, Xiaojuan, Chen, Yuxuan, Zhang, Shanli, Ben, Jianwei, Chen, Yang, Zhang, Zi-Hui, Jia, Yuping, Shi, Zhiming, Li, Dabing

    Published in Applied physics letters (18-10-2021)
    “…GaN-based ultraviolet (UV) detectors have a considerable application potential in many fields. In this Letter, we report an alternative strategy to realize a…”
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  9. 9

    Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductors by Xie, Zhiwei, Jiang, Ke, Zhang, Shanli, Ben, Jianwei, Liu, Mingrui, Lv, Shunpeng, Chen, Yang, Jia, Yuping, Sun, Xiaojuan, Li, Dabing

    Published in Light, science & applications (29-03-2024)
    “…With the fast development of artificial intelligence (AI), Internet of things (IOT), etc, there is an urgent need for the technology that can efficiently…”
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  10. 10

    Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes by Chen, Yuxuan, Ben, Jianwei, Xu, Fujun, Li, Jinchai, Chen, Yang, Sun, Xiaojuan, Li, Dabing

    Published in Fundamental research (Beijing) (01-11-2021)
    “…AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV) light-emitting diodes (LEDs) owing to their direct, wide, and…”
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  11. 11

    Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation by Zang, Hang, Sun, Xiaojuan, Jiang, Ke, Chen, Yang, Zhang, Shanli, Ben, Jianwei, Jia, Yuping, Wu, Tong, Shi, Zhiming, Li, Dabing

    Published in Advanced science (01-09-2021)
    “…Single‐photon sources based on solid‐state material are desirable in quantum technologies. However, suitable platforms for single‐photon emission are currently…”
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  12. 12

    Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall by Liu, Xinke, Li, Bo, Wu, Junye, Li, Jian, Yue, Wen, Zhu, Renqiang, Wang, Qi, Li, Xiaohua, Ben, Jianwei, He, Wei, Chiu, Hsien-Chin, Xu, Ke, Zhong, Ze

    “…In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch…”
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  13. 13

    Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field by Ben, Jianwei, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Wu, You, Kai, Cuihong, Wang, Yong, Luo, Xuguang, Feng, Zhe Chuan, Li, Dabing

    Published in Nanoscale research letters (30-05-2019)
    “…The refractive index of AlN has a direct influence on AlGaN-based deep ultraviolet optoelectronic devices, such as the external quantum efficiency of…”
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  14. 14

    Rapid inactivation of human respiratory RNA viruses by deep ultraviolet irradiation from light-emitting diodes on a high-temperature-annealed AlN/Sapphire template by Jiang, Ke, Liang, Simeng, Sun, Xiaojuan, Ben, Jianwei, Qu, Liang, Zhang, Shanli, Chen, Yang, Zheng, Yucheng, Lan, Ke, Li, Dabing, Xu, Ke

    Published in Opto-Electronic Advances (01-01-2023)
    “…Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued in both public environment and portable usage. The AlGaN-based…”
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  15. 15

    Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Wang, Yong, Zhang, Zihui, Guo, Long, Chen, Yuxuan, Li, Yahui, Qi, Zhanbin, Ben, Jianwei, Sun, Xiaojuan, Li, Dabing

    Published in Nanomaterials (Basel, Switzerland) (07-12-2021)
    “…In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as the dielectric layers in p -Al Ga N/AlGaN/n -Al Ga N polarization…”
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  16. 16

    Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region by Liu, Xinke, Chiu, Hsien-Chin, Liu, Chia-Hao, Kao, Hsuan-Ling, Chiu, Chao-Wei, Wang, Hsiang-Chun, Ben, Jianwei, He, Wei, Huang, Chong-Rong

    “…Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in…”
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  17. 17

    Sodium birnessite@graphene hierarchical structures for ultrafast sodium ion storage by Ben, Jianwei, Jia, Yuping, Wu, Tong, Liu, Xinke, Li, Xiaohua

    “…•The sodium birnessite@graphene hierarchical structures has been fabricated as the electrode material for sodium ion battery.•The Na+ mobility reaches…”
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  18. 18

    Regulation of oxygen defects in AlGaN-based epilayers grown on high temperature annealed AlN template by Su, Yang, Ben, Jianwei, Shi, Zhiming, Lu, Shunpeng, Zhang, Shanli, Jiang, Ke, Li, Dabing, Sun, Xiaojuan

    Published in Materials letters (15-08-2024)
    “…•The regulation of O defects in AlGaN on the HTA-AlN template is revealed.•O defects have limited diffusion distance and concentration in the AlN…”
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  19. 19

    Effect and Regulation Mechanism of Post-deposition Annealing on the Ferroelectric Properties of AlScN Thin Films by Liu, Mingrui, Zang, Hang, Jia, Yuping, Jiang, Ke, Ben, Jianwei, Lv, Shunpeng, Li, Dan, Sun, Xiaojuan, Li, Dabing

    Published in ACS applied materials & interfaces (03-04-2024)
    “…Integrating ferroelectric AlScN with III–N semiconductors to enhance the performance and tunability of nitride devices requires high-quality AlScN films. This…”
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  20. 20

    Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy by Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lü, Wei, Sun, Xiaojuan, Li, Dabing

    Published in Applied physics letters (03-08-2020)
    “…In the present work, improved crystal quality of GaN on a graphene-covered sapphire substrate was achieved compared to GaN grown on a bare sapphire substrate,…”
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