Search Results - "Belyakova, E I"

Numerical and Experimental Study of an Optimized p-SOS Diode by Lyublinsky, A. G., Belyakova, E. I., Grekhov, I. V.

“…We report on the results of experimental investigation and numerical simulation of switching of SOS diode with p + P 0 n + structure and with reduced thickness…”
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Students’ creativity and well-being during the forced distance learning period: The correlation between variables by Belyakova, I. E., Kecherukova, М. А., Murzina, Yu. S.

“…Introduction. The article is devoted to the study of the relationship of students’ creativity and their emotional well-being during the period of forced…”
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Adrenocortical and thyroid systems of rats during the initial period of nociceptive influences by Belyakova, E I, Mendzheritskii, A M

“…Two phases were identified in the initial period of formation of the adrenocortical reaction to acute nociception. The first phase (at 10-15 sec) consisted of…”
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White X-ray beam topography and radiography of Si1-x Gex crystals bonded to silicon by Argunova, T. S., Yi, J. M., Jung, J. W., Je, J. H., Sorokin, L. M., Gutkin, M. Yu, Belyakova, E. I., Kostina, L. S., Zabrodskii, A. G., Abrosimov, N. V.

“…The defect structure of Si1–x Gex wafers with 4% of germanium and their interfaces with Si wafers were studied using white radiation topography and…”
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Current-voltage characteristics of isotype SiC-SiC junctions fabricated by direct wafer bonding by Ivanov, P. A., Kostina, L. S., Potapov, A. S., Samsonova, T. P., Belyakova, E. I., Argunova, T. S., Grekhov, I. V.

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Structural and electrical properties of the GexSi1−x/Si heterojunctions obtained by the method of direct bonding by Argunova, T S, Belyakova, E I, Grekhov, I V, Zabrodskiĭ, A G, Kostina, L S, Sorokin, L M, Shmidt, N M, Yi, J M, Jung, J W, Je, J H, Abrosimov, N V

“…The results of studying the structural and electrical properties of structures produced by the method of direct bonding of GexSi1−x and Si wafers are reported…”
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Powerful diode nanosecond current opening switch made of p-silicon (p-SOS) by Grekhov, I. V., Lyublinskii, A. G., Belyakova, E. I.

“…The nanosecond semiconductor diode-based opening switch (SOS-diode) capable of switching currents with densities up to several tens of kiloamperes per cubic…”
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The formation of shallow-donor distribution profiles in proton irradiation of silicon by Grekhov, I. V., Kostina, L. S., Lomasov, V. N., Yusupova, Sh. A., Belyakova, E. I.

“…A study of the formation of shallow hydrogen-containing donors (hydrogen-related shallow thermal donors, STD(H)) in silicon under proton irradiation followed…”
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Direct bonding of silicon wafers with the concurrent formation of diffusion layers by Grekhov, I. V., Kostina, L. S., Argunova, T. S., Belyakova, E. I., Shmidt, N. M., Kostin, K. B., Kim, E. D., Kim, S. Ch

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The effects of single and repeated nociceptive stresses on the functional state of the serotonergic system of the rat brain by Belyakova, E. I., Kolmakova, T. S.

“…A comparison of responses of the central serotonergic system of rats to acute and repeated stresses has shown that the responses differ in these situations. In…”
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Analysis of charges and surface states at the interfaces of semiconductor-insulator-semiconductor structures by Berman, L. S., Belyakova, E. I., Kostina, L. S., Kim, E. D., Kim, S. C.

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Crack-free interface in wafer-bonded Ge/Si by patterned grooves by Argunova, T.S., Gutkin, M.Yu, Kostina, L.S., Grekhov, I.V., Belyakova, E.I., Je, J.H.

“…Crack-free interfaces can be achieved in wafer-bonded Ge/Si by using patterned grooves. Using synchrotron radiation phase-contrast imaging and scanning…”
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Regular relief on a silicon surface as a structural defect getter by Berman, L. S., Grekhov, I. V., Kostina, L. S., Belyakova, E. I., Kim, E. D., Kim, S. C.

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Reverse recovery of Si/Si1 − xGex heterodiodes fabricated by direct bonding by Grekhov, I. V., Belyakova, E. I., Kostina, L. S., Rozhkov, A. V., Argunova, T. S., Oganesyan, G. A.

“…We have studied the process of reverse recovery of Si/Si 1 − x Ge x heterodiodes fabricated by direct bonding of (111)-oriented n -type single crystal silicon…”
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Antioxidant properties of the cerebrospinal fluid in neurodegenerative diseases by Kolmakova, T. S., Smirnova, O. B., Belyakova, E. I.

“…Cerebrospinal fluid contains elements of the antioxidant system that are involved in the maintenance of homeostasis of the nervous tissue and its protection…”
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Reverse recovery of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding by Grekhov, I. V., Belyakova, E. I., Kostina, L. S., Rozhkov, A. V., Argunova, T. S., Oganesyan, G. A.

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White X‐ray beam topography and radiography of Si 1– x Ge x crystals bonded to silicon by Argunova, T. S., Yi, J. M., Jung, J. W., Je, J. H., Sorokin, L. M., Gutkin, M. Yu, Belyakova, E. I., Kostina, L. S., Zabrodskii, A. G., Abrosimov, N. V.

“…Abstract The defect structure of Si 1– x Ge x wafers with 4% of germanium and their interfaces with Si wafers were studied using white radiation topography and…”
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Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding by Grekhov, I. V., Kostina, L. S., Argunova, T. S., Belyakova, E. I., Rozkov, A. V., Shmidt, N. M., Yusupova, Sh. A., Je, J. H.

“…A new method for fabricating SiGe-on-insulator substrates, i.e., direct bonding of thermally oxidized Si wafers with Si 1 − x Ge x wafers cut from…”
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Phases of the primary response of the sympathoadrenal system to stress by Eremina, S. A., Belyakova, E. I.

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Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding by Grekhov, I. V., Belyakova, E. I., Kostina, L. S., Rozhkov, A. V., Yusupova, Sh. A., Sorokin, L. M., Argunova, T. S., Abrosimov, N. V., Matchanov, N. A., Je, J. H.

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