Search Results - "Belyaev, A. E"

Noise characterization of metal-single molecule contacts by Xiang, D., Sydoruk, V., Vitusevich, S., Petrychuk, M. V., Offenhäusser, A., Kochelap, V. A., Belyaev, A. E., Mayer, D.

“…Noise spectra of molecule-free and molecule-containing mechanically controllable break junctions were investigated. The molecule-free junctions revealed…”
Get full text

Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods by Vitusevich, S., Nasieka, I.M., Naumov, A. V., Kalyuzhnyi, V. V., Liubchenko, O. I., Antypov, I. O., Boyko, M. I., Belyaev, A. E.

“…The active channels in AlGaN/GaN‐based heterostructures are studied under different applied electrical fields to identify the Joule heating factors affecting…”
Get full text

Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation by Vitusevich, S.A., Kurakin, A.M., Konakova, R.V., Belyaev, A.E., Klein, N.

“…The cathodoluminescence (CL) spectra of AlGaN/GaN heterostructures grown on sapphire substrate were studied before and after gamma irradiation treatment. The…”
Get full text

Aluminium nitride–niobium multilayers and free-standing structures for MEMS by Danylyuk, S.V., Ott, R., Panaitov, G., Pickartz, G., Hollmann, E., Vitusevich, S.A., Belyaev, A.E., Klein, N.

“…In this article we investigate aluminium nitride–niobium thin films sputtered on Si wafers and free-standing structures made of these layers. The quality of…”
Get full text

Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels by Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Avksentyev, A. Yu, Sokolov, V. N., Kochelap, V. A., Belyaev, A. E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

“…We address experimental and theoretical study of a two-dimensional electron gas transport at low and moderate electric fields. The devices under study are…”
Get full text

Biomorphous SiC ceramics prepared from cork oak as precursor by Yukhymchuk, V.O., Kiselov, V.S., Valakh, M.Ya, Tryus, M.P., Skoryk, M.A., Rozhin, A.G., Kulinich, S.A., Belyaev, A.E.

“…Porous ceramic materials of SiC were synthesized from carbon matrices obtained via pyrolysis of natural cork as precursor. We propose a method for the…”
Get full text

On a New Mechanism for the Realization of Ohmic Contacts by Sachenko, A. V., Belyaev, A. E., Konakova, R. V.

“…Analysis of the contact-barrier height taking into account the distribution of surface states along coordinate x perpendicular to the insulator–semiconductor…”
Get full text

High-field quasi-ballistic transport in AlGaN/GaN heterostructures by Danilchenko, B. A., Tripachko, N. A., Belyaev, A. E., Vitusevich, S. A., Hardtdegen, H., Lüth, H.

“…Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2 K have been…”
Get full text

Effects of γ-irradiation on AlGaN/GaN-based HEMTs by Vitusevich, S. A., Klein, N., Belyaev, A. E., Danylyuk, S. V., Petrychuk, M. V., Konakova, R. V., Kurakin, A. M., Rengevich, A. E., Avksentyev, A. Yu, Danilchenko, B. A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

“…γ‐ray radiation effect has been studied on transport and noise properties of high electron mobility transistors (HEMTs) with gate lengths in the range from 350…”
Get full text

The effect of small addition of copper on the growth process, structure, surface charge and adsorption properties of ZnO films in the pyrolysis of dithiocarbamates by Snopok, B. A, Zavyalova, L. V, Tatyanenko, N. P, Gudymenko, A. I, Svechnikov, G. S, Kladko, V. P, Belyaev, A. E

“…The development of composite materials based on copper and zinc oxides is one of the main trends in low-temperature catalysis, sensor technology, and…”
Get full text

Influence of surface passivation on low-frequency noise properties of AlGaN/GaN high electron mobility transistor structures by Vitusevich, S. A., Petrychuk, M. V., Danylyuk, S. V., Kurakin, A. M., Klein, N., Belyaev, A. E.

“…We investigated low‐frequency noise in passivated and nonpassivated AlGaN/GaN high electron mobility transistor (HEMT) heterostructures grown on SiC substrate…”
Get full text

Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3 substrates by Danilchenko, B. A., Zelensky, S. E., Drok, E., Vitusevich, S. A., Danylyuk, S. V., Klein, N., Lüth, H., Belyaev, A. E., Kochelap, V. A.

“…The energy relaxation rate for hot electrons in AlGaN/GaN heterostructures was measured over the temperature range 4.2–300 K. Samples grown on sapphire and…”
Get full text

Modelling of X-ray diffraction curves for GaN nanowires on Si(111) by Kladko, V.P., Kuchuk, А.V., Stanchu, H.V., Safriuk, N.V., Belyaev, A.E., Wierzbicka, A., Sobanska, M., Klosek, K., Zytkiewicz, Z.R.

“…X-ray diffraction curves and reciprocal space maps from self induced GaN nanowires on Si(111) substrates were examined theoretically and experimentally…”
Get full text

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures by Belyaev, A. E., Boltovets, N. S., Klad’ko, V. P., Safryuk-Romanenko, N. V., Lubchenko, A. I., Sheremet, V. N., Shynkarenko, V. V., Slepova, A. S., Pilipenko, V. A., Petlitskaya, T. V., Pilipchuk, A. S., Konakova, R. V., Sachenko, A. V.

“…The temperature dependences of the specific contact resistance of silicon ρ c with a doping step are measured experimentally and described theoretically. The…”
Get full text

Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors by Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Sokolov, V. N., Kochelap, V. A., Belyaev, A. E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

“…The low-frequency 1/f noise characteristics of AlGaN/GaN high-electron-mobility transistors with gate length scaled down to 150 nm grown on sapphire by…”
Get full text

Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures by Kladko, V. P., Kuchuk, A. V., Safryuk, N. V., Machulin, V. F., Belyaev, A. E., Hardtdegen, H., Vitusevich, S. A.

“…The structural properties of AlGaN/GaN heterostructures grown by metal organic chemical vapor deposition on sapphire substrates with different thicknesses were…”
Get full text

Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structures by Vitusevich, S.A., Danylyuk, S.V., Petrychuk, M.V., Antoniuk, O.A., Klein, N., Belyaev, A.E.

“…The low frequency noise of AlGaN/GaN transmission line model (TLM) structures has been investigated in a wide temperature range. Deviation of low frequency…”
Get full text

Raman spectroscopy of bio-SiC ceramics by Yukhymchuk, V. O., Kiselov, V. S., Belyaev, A. E., Valakh, M. Ya, Chursanova, M. V., Danailov, M., Vitusevich, S. A.

“…Biomorphic SiC ceramics produced by the forced infiltration with liquid silicon of carbon matrices derived from hardwood precursors were investigated. The…”
Get full text

The mechanism of contact-resistance formation on lapped n-Si surfaces by Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Vinogradov, A. O., Kapitanchuk, L. M., Konakova, R. V., Kostylyov, V. P., Kudryk, Ya. Ya, Kladko, V. P., Sheremet, V. N.

“…Anomalous temperature dependences of the specific contact resistance ρ c ( T ) of Pd 2 Si-Ti-Au ohmic contacts to lapped n -Si with dopant concentrations of 5…”
Get full text

Resonant tunnelling effect in delta doped p-n GaAs junction by Vitusevich, S.A., Förster, A., Belyaev, A.E., Indlekofer, K.M., Lüth, H., Konakova, R.V.

“…An additional interband tunnelling peak in delta doped p-n junction is observed. The peak appears at voltages that correspond to the alignment of the…”
Get full text