Search Results - "Bellmann, M.P."
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Dynamic simulation of impurity transport and chemical reactions in a Bridgman furnace for directional solidification of multi-crystalline silicon
Published in Journal of crystal growth (15-04-2013)“…Numerical results from a dynamic simulation of impurity transport and reactions in a Bridgman furnace for directional solidification of multi-crystalline…”
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Crystallization of multicrystalline silicon from reusable silicon nitride crucibles: Material properties and solar cell efficiency
Published in Journal of crystal growth (15-12-2018)“…•Reusable silicon nitride crucible for mc-silicon ingot growth.•Five times use demonstrated.•Similar material performance as ingots grown from electronic grade…”
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3
Effect of flow pattern on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon
Published in Journal of crystal growth (01-01-2013)“…Numerical experiments are used to study thermally driven flow during directional solidification of multi-crystalline (mc) silicon. A solid–liquid (s–l)…”
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4
A novel method for gas flow and impurity control in directional solidification of multi-crystalline silicon
Published in Journal of crystal growth (01-08-2014)“…In this paper the potential of a specially designed argon gas injector for controlling the gas flow and transport of impurities in directional solidification…”
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5
Impurity segregation in directional solidified multi-crystalline silicon
Published in Journal of crystal growth (15-10-2010)“…In this paper numerical results on the impurity segregation in directional solidified multi-crystalline silicon are presented and compared with experimental…”
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6
3D dynamic simulation of heat transfer and melt flow in an inductively heated crystallization furnace for mc-silicon with PID temperature control
Published in Journal of crystal growth (15-11-2013)“…A heat transfer model of a semi-industrial induction furnace has been build, using a 3D finite element model in order to analyze the entire process cycle,…”
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7
Effect of accelerated crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon
Published in Journal of crystal growth (01-03-2011)“…We have performed axisymmetric, transient simulations of the vertical Bridgman growth of mc-silicon to study the effect of the accelerated crucible rotation…”
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Journal Article Conference Proceeding -
8
Optimization of silicon crystallization in a Bridgman growth furnace by numerical modeling
Published in Journal of crystal growth (01-01-2013)“…A heat transfer model of a semi-industrial furnace has been build, using a 3D FEM model in order to analyze the crystallization phase of a multi-crystalline…”
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9
Effect of steady crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon
Published in Journal of crystal growth (15-11-2011)“…We have performed axisymmetric, transient simulations of the vertical Bridgman growth of multi-crystalline (mc) silicon to study the effect of the steady…”
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10
Silica versus silicon nitride crucible: Influence of thermophysical properties on the solidification of multi-crystalline silicon by Bridgman technique
Published in Journal of crystal growth (01-03-2011)“…In contrast to standard silica crucibles, which can only be used once, crucibles made of silicon nitride have the potential of being used several times for…”
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11
The impact of germanium doping on the dislocation distribution in directional solidified mc-silicon
Published in Journal of crystal growth (15-06-2011)“…In this paper experimental results on the effect of the Ge doping on the distribution of dislocations in directional solidified multi-crystalline (mc) Si are…”
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12
Optimisation of the VGF growth process by inverse modelling
Published in Journal of crystal growth (15-07-2010)“…Numerical and experimental results on the thermal optimisation of vertical gradient freeze crystal growth are presented. An inverse modelling approach is…”
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13
Radial segregation in VGF-RMF grown germanium
Published in Journal of crystal growth (01-03-2009)“…In this paper experimental results of the radial dopant segregation in Ge:Ga single crystals grown by the vertical gradient freeze technique with a rotating…”
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14
Time-dependent numerical simulation of the VGF process with a rotating magnetic field
Published in Journal of crystal growth (01-05-2007)“…The influence of a rotating magnetic field (RMF) on the vertical gradient freeze (VGF) growth of Ga-doped Ge is studied numerically using the program CrysVun…”
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Journal Article Conference Proceeding