Search Results - "Bellmann, M.P."

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  1. 1

    Dynamic simulation of impurity transport and chemical reactions in a Bridgman furnace for directional solidification of multi-crystalline silicon by Bellmann, M.P., Panjwani, B., Syvertsen, M., Meese, E.A.

    Published in Journal of crystal growth (15-04-2013)
    “…Numerical results from a dynamic simulation of impurity transport and reactions in a Bridgman furnace for directional solidification of multi-crystalline…”
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    Journal Article
  2. 2

    Crystallization of multicrystalline silicon from reusable silicon nitride crucibles: Material properties and solar cell efficiency by Bellmann, M.P., Stokkan, G., Ciftja, A., Denafas, J., Kaden, T.

    Published in Journal of crystal growth (15-12-2018)
    “…•Reusable silicon nitride crucible for mc-silicon ingot growth.•Five times use demonstrated.•Similar material performance as ingots grown from electronic grade…”
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    Journal Article
  3. 3

    Effect of flow pattern on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon by Bellmann, M.P., M'Hamdi, M.

    Published in Journal of crystal growth (01-01-2013)
    “…Numerical experiments are used to study thermally driven flow during directional solidification of multi-crystalline (mc) silicon. A solid–liquid (s–l)…”
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    Journal Article Conference Proceeding
  4. 4

    A novel method for gas flow and impurity control in directional solidification of multi-crystalline silicon by Bellmann, M.P., Lindholm, D., M׳Hamdi, M.

    Published in Journal of crystal growth (01-08-2014)
    “…In this paper the potential of a specially designed argon gas injector for controlling the gas flow and transport of impurities in directional solidification…”
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    Journal Article
  5. 5

    Impurity segregation in directional solidified multi-crystalline silicon by Bellmann, M.P., Meese, E.A., Arnberg, L.

    Published in Journal of crystal growth (15-10-2010)
    “…In this paper numerical results on the impurity segregation in directional solidified multi-crystalline silicon are presented and compared with experimental…”
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    Journal Article
  6. 6

    3D dynamic simulation of heat transfer and melt flow in an inductively heated crystallization furnace for mc-silicon with PID temperature control by Bellmann, M.P., Lindholm, D., Sørheim, E.A., Mortensen, D., M'Hamdi, M.

    Published in Journal of crystal growth (15-11-2013)
    “…A heat transfer model of a semi-industrial induction furnace has been build, using a 3D finite element model in order to analyze the entire process cycle,…”
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    Journal Article
  7. 7

    Effect of accelerated crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon by Bellmann, M.P., Meese, E.A., Arnberg, L.

    Published in Journal of crystal growth (01-03-2011)
    “…We have performed axisymmetric, transient simulations of the vertical Bridgman growth of mc-silicon to study the effect of the accelerated crucible rotation…”
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    Journal Article Conference Proceeding
  8. 8

    Optimization of silicon crystallization in a Bridgman growth furnace by numerical modeling by Bellmann, M.P., Dalaker, H., Syvertsen, M., Gouttebroze, S., M'Hamdi, M.

    Published in Journal of crystal growth (01-01-2013)
    “…A heat transfer model of a semi-industrial furnace has been build, using a 3D FEM model in order to analyze the crystallization phase of a multi-crystalline…”
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    Journal Article Conference Proceeding
  9. 9

    Effect of steady crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon by Bellmann, M.P., Meese, E.A.

    Published in Journal of crystal growth (15-11-2011)
    “…We have performed axisymmetric, transient simulations of the vertical Bridgman growth of multi-crystalline (mc) silicon to study the effect of the steady…”
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    Journal Article
  10. 10

    Silica versus silicon nitride crucible: Influence of thermophysical properties on the solidification of multi-crystalline silicon by Bridgman technique by Bellmann, M.P., Meese, E.A., Syvertsen, M., Solheim, A., Sørheim, H., Arnberg, L.

    Published in Journal of crystal growth (01-03-2011)
    “…In contrast to standard silica crucibles, which can only be used once, crucibles made of silicon nitride have the potential of being used several times for…”
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    Journal Article Conference Proceeding
  11. 11

    The impact of germanium doping on the dislocation distribution in directional solidified mc-silicon by Bellmann, M.P., Kaden, T., Kressner-Kiel, D., Friedl, J., Möller, H.J., Arnberg, L.

    Published in Journal of crystal growth (15-06-2011)
    “…In this paper experimental results on the effect of the Ge doping on the distribution of dislocations in directional solidified multi-crystalline (mc) Si are…”
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    Journal Article
  12. 12

    Optimisation of the VGF growth process by inverse modelling by Bellmann, M.P., Pätzold, O., Stelter, M., Möller, H.J.

    Published in Journal of crystal growth (15-07-2010)
    “…Numerical and experimental results on the thermal optimisation of vertical gradient freeze crystal growth are presented. An inverse modelling approach is…”
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    Journal Article
  13. 13

    Radial segregation in VGF-RMF grown germanium by Bellmann, M.P., Pätzold, O., Gärtner, G., Möller, H.J., Stelter, M.

    Published in Journal of crystal growth (01-03-2009)
    “…In this paper experimental results of the radial dopant segregation in Ge:Ga single crystals grown by the vertical gradient freeze technique with a rotating…”
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    Journal Article
  14. 14

    Time-dependent numerical simulation of the VGF process with a rotating magnetic field by Bellmann, M.P., Pätzold, O., Wunderwald, U., Stelter, M., Möller, H.J.

    Published in Journal of crystal growth (01-05-2007)
    “…The influence of a rotating magnetic field (RMF) on the vertical gradient freeze (VGF) growth of Ga-doped Ge is studied numerically using the program CrysVun…”
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    Journal Article Conference Proceeding