Search Results - "Bellan, Ivan"
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Acoustic spectroscopy and electrical characterization of Si/NAOS-SiO2/HfO2 structures
Published in Applied surface science (15-03-2013)“…The MOS structure prepared on n-type Si substrate with SiO2/HfO2 gate dielectric layers was formed by 5nm HfO2 oxide deposited by atomic layer deposition on…”
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Determination of the Position of a Tectonic Dislocation in the Shape of a Line, which is Radiating Gamma Rays
Published in Advances in electrical and electronic engineering (01-12-2005)“…In the present paper we describe a computation of the position of a tectonic dislocation in the shape of a line, which is radiating gamma rays. We derive the…”
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Investigation of Interface States in Si/NAOS-SiO2/HfO2 Structures Using Complete Acoustic Spectroscopy
Published in Komunikácie : vedecké listy Žilinskej univerzity = Communications : scientific letters of the University of Žilina (28-02-2014)“…The set of MOS structures formed on n-type Si substrate with (NAOS)-SiO2/HfO2 gate dielectric layers was prepared and annealed in N2 atmosphere at various…”
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