Search Results - "Bell, G.R"

Towards dark current suppression in metallic photocathodes by selected-area oxidation by Benjamin, C., Seddon, S.D., Walker, M., Jones, L.B., Noakes, T.C.Q., Bell, G.R.

“…Oxide-free surfaces of polycrystalline Cu are prepared using acetic acid etching after chemical-mechanical polishing. UV ozone treatment is shown to increase…”
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Epitaxial growth and surface reconstruction of CrSb(0001) by Burrows, C.W., Aldous, J.D., Bell, G.R.

“…Smooth CrSb(0001) films have been grown by molecular beam epitaxy on MnSb(0001) – GaAs(111) substrates. CrSb(0001) shows (2 × 2), triple domain (1 × 4) and…”
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The c(4×4)–a(1×3) surface reconstruction transition on InSb(001): Static versus dynamic conditions by Bomphrey, J.J., Ashwin, M.J., Jones, T.S., Bell, G.R.

“…The transition between the a(1×3) and c(4×4) surface reconstructions of InSb(001) has been carefully monitored by reflection high energy electron diffraction…”
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Stoichiometry, contamination and microstructure of MnSb(0001) surfaces by Hatfield, S.A., Aldous, J.D., Bell, G.R.

“…The stoichiometry, microstructure and surface composition of MnSb have been investigated using X-ray photoelectron spectroscopy, electron diffraction and…”
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Growth by molecular beam epitaxy and interfacial reactivity of MnSb on InP(0 0 1) by Hatfield, S.A., Bell, G.R.

“…Growth by molecular beam epitaxy of MnSb on InP(0 0 1) has been studied over a range of substrate temperatures (250– 425 ∘ C ) and Sb:Mn flux ratios (2:1 to…”
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Mapping the surface reconstructions of MnSb(0 0 0 1) and ( 1 1 ¯ 0 1 ) by Hatfield, S.A., Bell, G.R.

“…The surface reconstruction periodicities of epitaxially grown MnSb (0 0 0 1) and ( 1 1 ¯ 0 1 ) have been determined under a range of beam fluxes and substrate…”
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Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots by Joyce, P.B, Krzyzewski, T.J, Steans, P.H, Bell, G.R, Neave, J.H, Jones, T.S

“…The change in shape and surface morphology of InAs/GaAs(0 0 1) quantum dots (QDs) during their initial encapsulation by GaAs has been studied using reflection…”
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Wetting layer evolution in InAs/GaAs( [formula omitted]) heteroepitaxy: effects of surface reconstruction and strain by Krzyzewski, T.J., Joyce, P.B., Bell, G.R., Jones, T.S.

“…InAs heteroepitaxy on the (2×4) and c(4×4) reconstructed surfaces of GaAs(0 0 1) has been studied using scanning tunnelling microscopy, with particular…”
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Understanding the growth mode transition in InAs/GaAs(0 0 1) quantum dot formation by Krzyzewski, T.J., Joyce, P.B., Bell, G.R., Jones, T.S.

“…Scanning tunneling microscopy has been used to monitor the growth by molecular beam epitaxy of InAs quantum dots (QDs) on GaAs(0 0 1) at and near the critical…”
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Bistable Fermi level pinning and surface photovoltage in GaN by Grodzicki, M., Moszak, K., Hommel, D., Bell, G.R.

“…[Display omitted] •Native oxide-covered n- and p-type GaN(0001) samples are used in this study.•Combining Kelvin probe, SPV and X-ray photoemission…”
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Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy by Joyce, P.B, Krzyzewski, T.J, Bell, G.R, Jones, T.S, Malik, S, Childs, D, Murray, R

“…The effect of the InAs deposition rate on the properties of InAs/GaAs quantum dots (QDs) grown on GaAs (0 0 1) substrates by molecular beam epitaxy has been…”
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Photoelectron spectroscopy study of Ga1-xMnxAs(001) surface oxide and low temperature cleaning by HATFIELD, S. A, VEAL, T. D, MCCONVILLE, C. F, BELL, G. R, EDMONDS, K. W, CAMPION, R. P, FOXON, C. T, GALLAGHER, B. L

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In situ scanning tunneling microscopy of InAs quantum dots on GaAs( [formula omitted]) during molecular beam epitaxial growth by Bell, G.R., Pristovsek, M., Tsukamoto, S., Orr, B.G., Arakawa, Y., Koguchi, N.

“…Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(0 0…”
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Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures by Joyce, P.B, Krzyzewski, T.J, Steans, P.H, Bell, G.R, Neave, J.H, Jones, T.S

“…Reflection high-energy electron diffraction and scanning tunnelling microscopy (STM) have been used to study InAs/GaAs quantum dot (QD) formation in bilayer QD…”
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Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAs(0 0 1)-(2×4) by Krzyzewski, T.J, Joyce, P.B, Bell, G.R, Jones, T.S

“…The evolution of the surface morphology and reconstruction during growth by molecular beam epitaxy of InAs on the GaAs(0 0 1)-(2×4) surface has been studied…”
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Band engineering in nitrogen-rich AlGaNAs quaternary alloys by Grodzicki, M., Majchrzak, D., Zdanowicz, E., Benjamin, C., Ciechanowicz, P., Bell, G.R., Kudrawiec, R., Hommel, D.

“…New alloys from the III-V family are presented. Undoped (0001)-oriented AlGaNAs epitaxial layers with 3%–16% Al and with constant As concentration equals 0.6%…”
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Nucleation and growth mechanisms during MBE of III–V compounds by Joyce, B.A, Vvedensky, D.D, Bell, G.R, Belk, J.G, Itoh, M, Jones, T.S

“…In this paper we discuss our recent results on the homoepitaxial growth of GaAs from beams of Ga and As 2( 4) and of InAs on GaAs from In and As 2( 4) beams…”
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Quantitative comparison of surface morphology and reflection high-energy electron diffraction intensity for epitaxial growth on GaAs by Bell, G.R., Jones, T.S., Neave, J.H., Joyce, B.A.

“…The relationship between developing surface morphology and specular spot intensity in reflection high-energy diffraction (RHEED) has been investigated during…”
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Heteroepitaxial growth of InAs on GaAs(001) by in situ STM located inside MBE growth chamber by Tsukamoto, S., Bell, G.R., Arakawa, Y.

“…The growth of InAs on GaAs(001) is of great interest primarily due to the self-assembly of arrays of quantum dots (QDs) with excellent opto-electronic…”
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Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films by Mousley, P.J., Burrows, C.W., Ashwin, M.J., Sánchez, A.M., Lazarov, V.K., Bell, G.R.

“…•Systematic study of MnSb/InGaAs(1 1 1)A epitaxial growth conditions.•MnSb/InGaAs(1 1 1) A system is susceptible to interdiffusion and segregation.•Mn-rich…”
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