Search Results - "Belhadfa, A."

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  1. 1

    Quantitative PIXE analysis of impurities and their influence on the electrical properties of metal-free phthalocyanine by HOUDAYER, A, HINRICHSEN, P. F, BELHADFA, A, CRINE, J. P, MARSAN, B

    Published in Journal of materials science (01-11-1988)
    “…The impurity content of commercial metal-free phthalocyanine (H sub(2)Pc) power has been determined by proton-induced X-ray emission, and high concentrations…”
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    Journal Article
  2. 2

    Multi-elemental depth profiling by microbeam PIXE of phenolic coatings exposed to sulphuric acid by KAJRYS, G, HOUDAYER, A. J, HINRICHSEN, P. F, BELHADFA, A, HECHLER, J. J, COMPERE, C, CAMPBELL, J. L

    Published in Journal of materials science (01-12-1990)
    “…The phenolic coatings used to protect the steel of railway tanks during the shipment of concentrated sulphuric acid have been studied by microbeam PIXE and…”
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    Journal Article
  3. 3

    Migration of impurities from cable shields and tree initiation in XLPE by Belhadfa, A., Houdayer, A., Hinrichsen, P., Kajrys, G., Crine, J.-P., Gilbert, R.

    “…The authors present laboratory results obtained with plaques of cable-grade XLPE (cross-linked polyethylene) pressed on plaques made of commercial shield…”
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    Conference Proceeding
  4. 4

    A localized trace element analysis of water trees in XLPE cable insulation by micro-PIXE and EDX by Hinrichsen, P.F., Houdayer, A., Belhadfa, A., Crine, J.-P., Pelissou, S., Cholewa, M.

    Published in IEEE transactions on electrical insulation (01-12-1988)
    “…PIXE (proton-induced X-ray emission) with a focused proton beam of 30-or 220- mu m diameter and EDX (energy dispersive X-ray analysis) of water-trees in XLPE…”
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    Journal Article
  5. 5

    Impurities in semiconductive compounds used as HV cable shields by Belhadfa, A., Houdayer, A.J., Hinrichsen, P.F., Kajrys, G., St.-Pierre, J., Kennedy, G., Crine, J.-P., Burns, N.

    Published in IEEE transactions on electrical insulation (01-08-1989)
    “…Quantitative PIXE (proton-induced X-ray emission) and neutron activation analysis measurements of the concentration and distribution of mineral impurities in…”
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    Journal Article
  6. 6

    Migration of impurities from semicon shield through PE insulation under various experimental conditions by Belhadfa, A., Houdayer, A., Hinrichsen, P.F., Kajrys, G., Crine, J.-P., Noirhomme, B.

    “…Micro-PIXE (proton-induced X-ray emission) has been used to measure the depth profiles of impurities migrating from heavily contaminated semiconducting shield…”
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    Conference Proceeding