Search Results - "Belas, E"

Laser-induced transient currents in CdZnTe quasi-hemispherical radiation detector by Grill, R., Betušiak, M., Bettelli, M., Praus, P., Abbene, L., Pipek, J., Belas, E., Zappettini, A.

“…Laser-induced transient currents were measured after applying pulsed or direct-current bias to a CdZnTe quasi-hemispherical radiation detector with gold…”
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Space charge formation in the high purity semi-insulating bulk 4H–silicon carbide by Belas, E., Betušiak, M., Grill, R., Praus, P., Brynza, M., Pipek, J., Moravec, P.

“…•Positive space charge formation in the HPSI bulk 4H-SiC due to blocking contacts.•Presence of the dispersed wide impurity band below the Fermi level.•Very…”
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Characterization of polarizing semiconductor radiation detectors by laser-induced transient currents by Musiienko, A., Grill, R., Pekárek, J., Belas, E., Praus, P., Pipek, J., Dědič, V., Elhadidy, H.

“…A method is presented for the determination of the carrier drift mobility, lifetime, electric field distribution, and the dynamics of space charge formation,…”
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Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors by Yang, G., Bolotnikov, A.E., Fochuk, P.M., Kopach, O., Franc, J., Belas, E., Kim, K.H., Camarda, G.S., Hossain, A., Cui, Y., Adams, A.L., Radja, A., Pinder, R., James, R.B.

“…Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In…”
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In-Orbit Commissioning of Czech Nanosatellite VZLUSAT-1 for the QB50 Mission with a Demonstrator of a Miniaturised Lobster-Eye X-Ray Telescope and Radiation Shielding Composite Materials by Daniel, V., Inneman, A., Vertat, I., Baca, T., Nentvich, O., Urban, M., Stehlikova, V., Sieger, L., Skala, P., Filgas, R., Zadrazil, V., Linhart, R., Masopust, J., Jamroz, T., Pina, L., Marsikova, V., Mikulickova, L., Belas, E., Pospisil, S., Vykydal, Z., Mora, Y., Pavlica, R.

“…This paper presents the results of in-orbit commissioning of the first Czech technological CubeSat satellite of VZLUSAT-1. The 2U nanosatellite was designed…”
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Photoluminescence of CdTe:In the spectral range around 1.1 eV by Zázvorka, J., Hlídek, P., Grill, R., Franc, J., Belas, E.

“…Temperature and excitation dependences of photoluminescence (PL) spectra of a slightly In-doped CdTe crystal were investigated, particularly in the spectral…”
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Charge transport in CdZnTe coplanar grid detectors examined by laser induced transient currents by Praus, P., Kunc, J., Belas, E., Pekárek, J., Grill, R.

“…Laser-induced transient current technique was used for the visualization of charge transfer in the coplanar CdZnTe radiation detector including distinction to…”
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Positron annihilation spectroscopy of vacancy-related defects in CdTe:Cl and CdZnTe:Ge at different stoichiometry deviations by Šedivý, L., Čížek, J., Belas, E., Grill, R., Melikhova, O.

“…Positron annihilation spectroscopy (PAS) was used to examine the effect of defined Cd-rich and Te-rich annealing on point defects in Cl-doped CdTe and Ge-doped…”
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Charge transport in semi insulating bulk 4H-Silicon carbide: Effect of metallization and wafer homogeneity by Praus, P., Betušiak, M., Belas, E., Kunc, J., Grill, R., Brynza, M., Pipek, J.

“…•The space charge ∼1014 cm−3 is formed in the sensors after 104 s biasing.•Different sensors polarize at DC bias in the time interval of 0.2–270 s.•Different…”
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Investigation of the effect of argon ion beam on CdZnTe single crystals surface structural properties by Šik, O., Bábor, P., Škarvada, P., Potoček, M., Trčka, T., Grmela, L., Belas, E.

“…Scanning Electron microscopy and Atomic Force Microscopy and X-ray photoemission spectroscopy were used to investigate the effect of argon ion bombardment on…”
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Determining the sub-surface damage of CdTe single crystals after lapping by Šik, O., Škvarenina, L., Caha, O., Moravec, P., Škarvada, P., Belas, E., Grmela, L.

“…We introduce an affordable and easy-to-implement method of determining the thickness of a mechanically damaged layer on the surface of a cadmium telluride…”
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Polarization Study of Defect Structure of CdTe Radiation Detectors by Grill, R., Belas, E., Franc, J., Bugar, M., Uxa, S., Moravec, P., Hoschl, P.

“…Polarization of CdTe radiation detectors in the dark was studied theoretically by taking into account a wide set of detector characteristics relevant to the…”
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Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing by Belas, E., Bugár, M., Grill, R., Franc, J., Moravec, P., Hlídek, P., Höschl, P.

“…(CdZn)Te with the composition of 3% Zn and In-doped CdTe single crystals were annealed at various annealing temperatures and under various Cd or Te pressures…”
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Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method by Franc, J., Šedivý, L., Belas, E., Bugár, M., Zázvorka, J., Pekárek, J., Uxa, Š., Höschl, P., Fesh, R.

“…We present results of development of CdZnTe semi‐insulating crystals prepared by Vertical Gradient Freeze method in a 4‐zone furnace. We applied the way of…”
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Photoconductivity Mapping of Semi-Insulating CdZnTe by Kubat, J., Franc, J., Dedic, V., Belas, E., Moravec, P., Babentsov, V., Hoschl, P., Grill, R.

“…Semi-insulating CdZnTe crystals were studied by photoconductivity mapping using both the contactless method and measurement with evaporated Au contacts. The…”
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Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth by Yang, G., Bolotnikov, A. E., Cui, Y., Camarda, G. S., Hossain, A., Kim, K. H., Franc, J., Belas, E., James, R. B.

“…We used a low-temperature photoluminescence (PL) technique to investigate CdTe:In crystals after annealing in molten bismuth (Bi). The two annealed samples…”
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Semi-insulating Te-saturated CdTe by Grill, R., Franc, J., Hoschl, P., Turkevych, I., Belas, E., Moravec, P.

“…The evolution of defect structure and self-compensation is theoretically studied within quasichemical formalism in undoped and donor-doped Te-saturated CdTe…”
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Evaluation of the Concentration of Deep Levels in Semi-Insulating CdTe by Photoconductivity and TEES by Kubat, J., Elhadidy, H., Franc, J., Grill, R., Belas, E., Hoschl, P., Praus, P.

“…The concentrations of near-midgap levels in high-resistivity CdTe were estimated based on a combined evaluation of room temperature lux-ampere characteristics…”
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Elimination of Te Inclusions in Crystals by Short-term Thermal Annealing by Fochuk, P., Grill, R., Kopach, O., Bolotnikov, A. E., Belas, E., Bugar, M., Camarda, G., Chan, W., Cui, Y., Hossain, A., Kim, K. H., Nakonechnyi, I., Panchuk, O., Yang, G., James, R. B.

“…The presence of Te inclusions degrades the quality of today's CdZnTe (CZT) crystals used for Xand gamma-ray detectors; both their sizes and concentrations…”
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Effect of Crystals Annealing on Their High-Temperature Electrical Properties by Fochuk, P., Grill, R., Nakonechnyi, I., Kopach, O., Panchuk, O., Verzhak, Y., Belas, E., Bolotnikov, A. E., Yang, G., James, R. B.

“…We studied the electrical properties of Cd 0.9 Zn 0.1 Te:In (CZT) single crystals with [In]=3*10 15 at/cm 3 at its high-temperature point-defect (PD)…”
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