Search Results - "Bel’kov, V.V."

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  1. 1

    Circular and linear magnetic quantum ratchet effects in dual-grating-gate CdTe-based nanostructures by Faltermeier, P., Budkin, G.V., Hubmann, S., Bel'kov, V.V., Golub, L.E., Ivchenko, E.L., Adamus, Z., Karczewski, G., Wojtowicz, T., Kozlov, D.A., Weiss, D., Ganichev, S.D.

    “…Circular and linear magnetic quantum ratchet effects induced by alternating electric fields in the terahertz frequency range have been observed. The ratchet…”
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    Journal Article
  2. 2

    Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells by Bel'kov, V.V., Ganichev, S.D., Schneider, Petra, Back, C., Oestreich, M., Rudolph, J., Hägele, D., Golub, L.E., Wegscheider, W., Prettl, W.

    Published in Solid state communications (01-11-2003)
    “…We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together…”
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    Journal Article
  3. 3

    Impact Ionization Induced by Terahertz Radiation in HgTe Quantum Wells of Critical Thickness by Hubmann, S., Budkin, G.V., Urban, M., Bel’kov, V.V., Dmitriev, A.P., Ziegler, J., Kozlov, D.A., Mikhailov, N.N., Dvoretsky, S.A., Kvon, Z.D., Weiss, D., Ganichev, S.D.

    “…We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in HgTe quantum well (QW) structures of critical thickness,…”
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    Journal Article
  4. 4

    Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems by Weber, W., Seidl, S., Bel’kov, V.V., Golub, L.E., Danilov, S.N., Ivchenko, E.L., Prettl, W., Kvon, Z.D., Cho, Hyun-Ick, Lee, Jung-Hee, Ganichev, S.D.

    Published in Solid state communications (2008)
    “…Magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show…”
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    Journal Article
  5. 5

    Photoconductivity of vanadium-doped lead telluride in the terahertz spectral region by Artamkin, A. I., Dobrovolsky, A. A., Vinokurov, A. A., Zlomanov, V. P., Danilov, S. N., Bel’kov, V. V., Ryabova, L. I., Khokhlov, D. R.

    Published in Semiconductors (Woodbury, N.Y.) (01-03-2013)
    “…It is shown that PbTe:V single crystals are photosensitive in the terahertz spectral region up to the wavelength 280 μm. The measurements are conducted in the…”
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    Journal Article
  6. 6

    Photoconductivity of PbTe:In films with variable microstructure by Chernichkin, V. I., Dobrovolsky, A. A., Dashevsky, Z. M., Kasiyan, V. A., Bel’kov, V. V., Ganichev, S. D., Danilov, S. N., Ryabova, L. I., Khokhlov, D. R.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2011)
    “…It is shown that the microstructure and features of formation of surface states in nanocrystalline and polycrystalline PbTe:In films most significantly affect…”
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    Journal Article
  7. 7

    Hole spin-relaxation in quantum wells from saturation of inter-subband absorption by Kainz, J., Schneider, Petra, Ganichev, S.D., Rössler, U., Wegscheider, W., Weiss, D., Prettl, W., Bel'kov, V.V., Golub, L.E., Schuh, D.

    “…Spin-sensitive saturation of absorption of infrared radiation has been investigated in p-type GaAs QWs. It is shown that the absorption saturation of…”
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    Journal Article
  8. 8

    Electric current-induced spin orientation in quantum well structures by Ganichev, S.D., Danilov, S.N., Schneider, Petra, Bel’kov, V.V., Golub, L.E., Wegscheider, W., Weiss, D., Prettl, W.

    “…A longstanding theoretical prediction is the orientation of spins by an electrical current flowing through low-dimensional carrier systems of sufficiently low…”
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    Journal Article
  9. 9

    Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs by Ganichev, S.D, Danilov, S.N, Bel'kov, V.V, Ivchenko, E.L, Ketterl, H, Vorobjev, L.E, Bichler, M, Wegscheider, W, Prettl, W

    “…We report on the first observation of the circular photogalvanic effect (CPGE) induced by optical monopolar spin orientation of holes in p-doped quantum-well…”
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    Journal Article
  10. 10

    Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substrates by Bel'kov, V.V, Botnaryuk, V.M, Fedorov, L.M, Goncharuk, I.N, Novikov, S.V, Ulin, V.P, Zhilyaev, Yu.V, Cheng, T.S, Jeffs, N.J, Foxon, C.T, Katsavets, N.I, Harrison, I

    Published in Journal of crystal growth (01-04-1998)
    “…We have studied the growth by hydride vapour phase epitaxy (HVPE) of GaN on GaN layers grown by molecular beam epitaxy (MBE) on sapphire and GaAs(1 1 1)B…”
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    Journal Article
  11. 11

    Zero-Bias Spin Separation in Quantum Wells by Ganichev, S.D., Bel'kov, V.V., Tarasenko, S.A., Danilov, S.N., Giglberger, S., Hoffmann, Ch, Ivchenko, E.L., Weiss, D., Gerl, C., Schuh, D., Wegscheider, W., Prettl, W.

    “…We show that in gyrotropic semiconductor structures spin-dependent asymmetry of electron scattering induce a pure spin current which, in contrast to the spin…”
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    Conference Proceeding
  12. 12
  13. 13

    Infrared radiation induced spin photocurrents in GaN low-dimensional structures by Weber, W., Ganichev, S.D., Bel'kov, V.V., Golub, L.E., Prettl, W., Kvon, Z.D., Hyun-Ick Cho, Jung-Hee Lee

    “…Infrared radiation spin photocurrents have been observed in GaN quantum well structures. Observed currents change sign upon reversing of radiation helicity…”
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    Conference Proceeding
  14. 14
  15. 15

    Magneto-gyrotropic effect in semiconductor quantum wells by Ganichev, S.D., Bel'kov, V.V., Schneider, P., Giglberger, S., Danilov, S.N., Weber, W., Olteanu, M., Prettl, W.

    “…A new type of infrared induced photocurrents is reported occurring in gyrotropic quantum wells in the presence of a magnetic field. The effect is caused by…”
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    Conference Proceeding