Gated field emitter arrays

Gated field emitter arrays

The successful fabrication of field emission (FE) devices is directly related to process simplicity and device performance, which depends to a large extent on the tip material and emitter geometry. On the other hand, these characteristics are the most important issues influencing industrial applicab...

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Bibliographic Details
Published in:Microelectronic engineering Vol. 57; pp. 813 - 818
Main Authors: Debski, Tomasz, Barth, Wolfgang, Rangelow, Ivo W., Biehl, Steffen, Grabiec, Piotr, Bekh, I.I., Lushkin, A.E., Il’chenko, L.G., Il’chenko, V.V., Kostic, Ivan, Hudek, Peter, Mitura, Stanislaw
Format: Journal Article Conference Proceeding
Language:English
Published: Amsterdam Elsevier B.V 01-09-2001
Elsevier Science
Subjects:
Applied sciences
Diamond-like-carbon layers emission
Electronics
Exact sciences and technology
Field emission array
Field emission display
Self-alignment technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon micromachining
Vacuum microelectronics
Self-alignment technology
Field emission array
Diamond-like-carbon layers emission
Silicon micromachining
Field emission display
Array
Engraving
Field emitter
Lithography
Manufacturing process
Self alignment
Micromachining
Chemical vapor deposition
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Description
Summary:The successful fabrication of field emission (FE) devices is directly related to process simplicity and device performance, which depends to a large extent on the tip material and emitter geometry. On the other hand, these characteristics are the most important issues influencing industrial applicability of the FE devices. In most typical solutions single emitter cells consist of a sharp tip located in the hollow, with the tip apex surrounded by a gate. The fabrication process described here is simple and allows self-aligned gate electrode formation. The field emission of the emitter tips is supported by a 50-nm diamond-like-carbon (DLC) film formed by chemical vapor deposition.
Bibliography:SourceType-Scholarly Journals-2
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ObjectType-Conference Paper-1
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SourceType-Conference Papers & Proceedings-1
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ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(01)00557-3