Search Results - "Behera, Makhes K"
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Lead-free relaxor-ferroelectric thin films for energy harvesting from low-grade waste-heat
Published in Scientific reports (08-01-2021)“…One of the ways to mitigate the world energy crisis is to harvest clean and green energy from waste-heat, which is abundant, ubiquitous, and free. Energy…”
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Gallium doped zinc oxide thin films as transparent conducting oxide for thin-film heaters
Published in AIP advances (01-07-2021)“…The addition of suitable metallic dopants into the indium or zinc oxide matrix is essential to obtain transparent conducting oxide (TCO) thin films for…”
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Observation of MOSFET-like behavior of a TFT based on amorphous oxide semiconductor channel layer with suitable integration of atomic layered deposited high-k gate dielectrics
Published in AIP advances (01-02-2023)“…A series of different high κ dielectrics such as HfO2, ZrO2, and Al2O3 thin films were studied as an alternative material for the possible replacement of…”
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Influence of oxygen on the optical, electrical, and heating properties of gallium-doped zinc oxide (GZO) films
Published in AIP advances (01-02-2023)“…Thin-film transparent heaters (TFTHs) are gaining popularity in optoelectronics and a variety of domestic applications, including smart windows, car…”
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5
Fabrication and characterization of SnO2 nanorods for room temperature gas sensors
Published in AIP advances (01-09-2018)“…Highly sensitive large-scale tin oxide (SnO2) nanostructures were grown on a glass substrate by thermal evaporation of a mixture of anhydrous tin (II) chloride…”
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Potential low powered smart window coating using a stoichiometrically downgraded vanadium oxide thin film structure
Published in AIP advances (01-06-2020)“…With a metal to insulator transition (MIT) temperature of ∼68 °C to 70 °C, which is close to room temperature (RT), vanadium oxide (VO2) has piqued interest in…”
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Study of dielectric properties in stacked high-k dielectric metal oxide semiconductor capacitor (MOSCAP) devices
Published in Journal of materials science. Materials in electronics (01-07-2024)“…With the current technology having reached the physical limits of size downscaling, efforts need to be made toward the development of new dielectric materials…”
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Reduced Transition Temperature in Al:ZnO/VO2 Based Multi-Layered Device for low Powered Smart Window Application
Published in Scientific reports (04-02-2020)“…The metal-to-insulator transition (MIT) closest to room temperature of 68–70 °C as shown by vanadium oxide (VO 2 ), compared with other transition metal…”
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Reduced Transition Temperature in Al:ZnO/VO 2 Based Multi-Layered Device for low Powered Smart Window Application
Published in Scientific reports (04-02-2020)“…The metal-to-insulator transition (MIT) closest to room temperature of 68-70 °C as shown by vanadium oxide (VO ), compared with other transition metal oxides,…”
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